Multilayer Membranes For X-Ray Lithography

1993 ◽  
Vol 306 ◽  
Author(s):  
Alex R. Shimkunas ◽  
Philip E. Mauger ◽  
Lawrence P. Bourge
Keyword(s):  
Fracture Strength ◽  
Electron Cyclotron Resonance ◽  
Multilayer Coating ◽  
Single Layer ◽  
Chemical Vapor ◽  
High Fracture ◽  
X Ray ◽  
Chemical Etch ◽  
Optical Alignment ◽  
Manufacturing Yield

AbstractMultilayer x-ray lithography membranes were designed and fabricated. Consisting of alternating layers of SiC and SiNx, the membranes were designed to have low reflectance for improved optical alignment of x-ray masks, high fracture strength, superior chemicaletch resistance, and high manufacturing yield. The membranes were prepared from multilayer coatings deposited on silicon wafers in an electron cyclotron resonance chemical vapor deposition system. Membranes with less than 5% reflectance over 150 nm bandwidths were made. External SiNx layers increased the chemical etch resistance of the membranes. The fracture strength was 2–3 times that of SiC, and the membrane yield was 50% higher than that of single-layer SiC. Field-emission SEM of the multilayer coating cross-section showed the presence of 20–150 nm defects near the layer interfaces. The layering confines or stabilizes the defects, thereby increasing the membrane yield and fracture strength.

X-ray reflectometer for single layer and multilayer coating characterization at 8 keV: An interlaboratory study

2016 ◽  
Vol 87 (10) ◽  
pp. 104501 ◽  
Author(s):  
Danielle N. Gurgew ◽  
David M. Broadway ◽  
Mikhail Gubarev ◽  
Brian D. Ramsey ◽  
Don A. Gregory
Keyword(s):  
Multilayer Coating ◽  
Single Layer ◽  
Interlaboratory Study ◽  
X Ray

Effects of Seeding Over the Microstructure and Stresses of Diamond Thin Films

1999 ◽  
Vol 594 ◽  
Author(s):  
S. Gupta ◽  
G. Morell ◽  
R. S. Katiyar ◽  
D. R. Gilbert ◽  
R. K. Singh
Keyword(s):  
Electron Cyclotron Resonance ◽  
Raman Band ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Interfacial Stress ◽  
Intrinsic Stress ◽  
Seeding Density ◽  
X Ray Diffraction ◽  
Total Stress ◽  
X Ray

AbstractWe have studied diamond films grown by electron cyclotron resonance-assisted chemical vapor deposition (ECR-CVD) at low pressure (1.0 Torr) and temperatures (550–700 °C). These films were grown on seeded Si (111) substrates with different diamond seed densities (0.225, 1.5, 2.3, and 3.1 × 109 nuclei/cm2). Scanning electron microscopy (SEM), X-ray diffraction (XRD) and Raman spectroscopy (RS) were employed to investigate the crystalline quality, diamond yield, and stresses developed in the films as a function of seeding density. Thermal interfacial stress, interactions across grain boundaries, and internal stress were considered in order to account for the total stress observed from the Raman band. We present correlations among seed density, relative amount of non-sp3 phase, O/C ratio, and total intrinsic stress.

X-ray reflectivity spectra of ultrathin films and nanometric multilayers: Experiment and simulation

2001 ◽  
Vol 16 (9) ◽  
pp. 2556-2561 ◽  
Author(s):  
E. Bontempi ◽  
L. E. Depero ◽  
L. Sangaletti ◽  
F. Giorgis ◽  
C. F. Pirri
Keyword(s):  
Multilayer Film ◽  
Thickness Distribution ◽  
Single Layer ◽  
Chemical Vapor ◽  
Interface Roughness ◽  
X Ray ◽  
Deposition Parameters ◽  
Reflectivity Spectra ◽  
Nominal Thickness ◽  
Best Fitting

Amorphous silicon–nitrogen (a–Si1−xNx:H) alloys, thin films, and multilayers deposited by ultrahigh-vacuum plasma-enhanced chemical vapor deposition were studied and modeled by x-ray reflectivity (XRR) measurements. The analysis of XRR data obtained from the single-layer samples allowed us to calculate the density, thickness, and interface roughness of each layer. To check the deposition parameters, the deviation (tnom – texp)/(tnom) of the measured thickness texp from the nominal thickness tnom was evaluated. Based on these results, a simulation of a multilayer film, obtained by deposition alternating stoichiometric and substoichimetric layers was carried out. It is shown that the best fitting is obtained by introducing into the XRR calculation a thickness distribution with a standard deviation related to the deviation (tnom – texp)/(tnom) estimated for the single layers.

Fracture Toughness of TiN Coating as a Function of Interlayer Thickness

2013 ◽  
Vol 829 ◽  
pp. 466-470 ◽  
Author(s):  
Haman Hedaiat Mofidi ◽  
Alireza Sabour Rouhaghdam ◽  
Shahrokh Ahangarani ◽  
Mansoor Bozorg ◽  
Mahboobeh Azadi
Keyword(s):  
Fracture Toughness ◽  
Single Layer ◽  
Chemical Vapor ◽  
Interlayer Thickness ◽  
X Ray Diffraction ◽  
X Ray ◽  
Tin Coatings ◽  
Maximum Value ◽  
Vapor Deposition Technique ◽  
Indentation Tests

Single layer TiN and Ti/TiN bilayers were deposited on H-13 steel by plasma enhanced chemical vapor deposition technique. TiN thickness was kept constant at 2 μm and Ti thickness values ranged between 100 nm to 1 μm. Fracture toughness and residual stress of TiN coatings was measured as functions of thickness of titanium interlayer. Vickers indentation tests, X-ray diffraction, optical microscopy and field emission scanning electron microscopy were used to characterize the coatings. Results showed fracture toughness of the coating increases severely by increasing interlayer thickness. Additionally, internal stress which causes debonding and breaking of the entire coating, reduces about 70% by increasing interlayer thickness up to 600 nm. Moreover, there is maximum value for interlayer thickness in order to optimize fracture toughness of the coating.

Effects of Microstructure of Compacted Graphite Iron in Tribological Strategy

2018 ◽  
Vol 140 (5) ◽  
Author(s):  
Arnaud Duchosal ◽  
Damien Joly ◽  
René Leroy ◽  
Roger Serra
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Physical Vapor Deposition ◽  
Multilayer Coating ◽  
Three Dimensional ◽  
Single Layer ◽  
Chemical Vapor ◽  
Compacted Graphite Iron ◽  
Compacted Graphite ◽  
Pvd Coating

In this paper, the effect of compacted graphite iron (CGI) microstructure has been investigated in tribological strategy. From industrial context, two coatings have been chosen: a single layer coating (physical vapor deposition (PVD)) and a multilayer coating (chemical vapor deposition (CVD)). Pin-on-disk tests have been done to analyze wear mechanisms and to directly obtain the coefficient of friction. Rotation speed of the disk has been adjusted to get the same linear velocity on different disk radii to get up to 150 m min−1 similar to machining condition. Three-dimensional (3D) profilometer, scanning electron microscopy, and nano-indentation were used to observe the track profiles, the pin, and the disk wears and to measure the hardness of microstructure components, respectively. Results showed that PVD coating was more abrasive and had more volume of sticking materials. Chemical vapor deposition coating, which could be the most appropriate for machining CGI, has a real antisticking property and has less friction coefficient than PVD coating. But the presence of small TiCN precipitates in CGI material has a proven negative effect in CVD coating lifetime.

scholarly journals The Relationship between Cyclic Multi-Scale Self-Organized Processes and Wear-Induced Surface Phenomena under Severe Tribological Conditions Associated with Buildup Edge Formation

Coatings ◽  
2021 ◽  
Vol 11 (8) ◽  
pp. 1002
Author(s):  
German Fox-Rabinovich ◽  
Iosif S. Gershman ◽  
Edinei Locks ◽  
Jose M. Paiva ◽  
Jose L. Endrino ◽  
...  
Keyword(s):  
Photoelectron Spectroscopy ◽  
Multilayer Coating ◽  
Chemical Vapor ◽  
Experimental Investigations ◽  
Electron Backscattered Diffraction ◽  
X Ray ◽  
Wear Process ◽  
Multi Scale ◽  
Self Organized ◽  
Wear Evaluation

This paper presents experimental investigations of various interrelated multi-scale cyclic and temporal processes that occur on the frictional surface under severe tribological conditions during cutting with buildup edge formation. The results of the finite element modeling of the stress/temperature profiles on the friction surface are laid out. This study was performed on a multilayer coating with the top alumina ceramic layer deposited by CVD (chemical vapor deposition) on a WC/Co carbide substrate. A detailed analysis of the wear process was conducted by 3D wear evaluation, scanning electron microscopy/energy-dispersive X-ray spectroscopy (SEM/EDS) and electron backscattered diffraction (EBSD), as well as X-ray photoelectron spectroscopy (XPS) methods. The following cyclic phenomena were observed on the surface of the tribo-system during the experiments: a repetitive formation and breakage of buildups (a self-organized critical process) and a periodical increase and decrease in the amount of thermal barrier tribo-films with a sapphire structure (which is a self-organization process). These two processes are interrelated with the accompanying progression of cratering, eventually resulting in the catastrophic failure of the entire tribo-system.

Residual Stresses in Single and Multilayer Composite Diamond Coatings

1996 ◽  
Vol 458 ◽  
Author(s):  
K. Jagannadham ◽  
T. R. Watkims ◽  
J. Narayan
Keyword(s):  
Residual Stresses ◽  
Single Layer ◽  
Chemical Vapor ◽  
Diamond Coating ◽  
Diamond Coatings ◽  
X Ray Diffraction ◽  
X Ray ◽  
Different Types ◽  
Composite Diamond ◽  
Hot Filament

ABSTRACTResidual stresses were measured in different types of diamond coatings deposited onto molybdenum substrates by hot filament chemical vapor deposition. The types of coatings examined include a continuous single layer diamond coating and a continuous multilayer diamond composite coating with an aluminum nitride embedding layer. The stresses were determined by X-ray diffraction and Raman spectroscopy and compared.

Interactions of Ge Atoms with High- ê Oxide Dielectric Surfaces

2005 ◽  
Vol 879 ◽  
Author(s):  
Scott K. Stanley ◽  
John G. Ekerdt
Keyword(s):  
Oxide Layer ◽  
Photoelectron Spectroscopy ◽  
Chemical Vapor ◽  
Temperature Programmed Desorption ◽  
Tungsten Filament ◽  
X Ray ◽  
Dielectric Surfaces ◽  
Temperature Programmed ◽  
The Stability ◽  
Ge Nanocrystals

AbstractGe is deposited on HfO2 surfaces by chemical vapor deposition (CVD) with GeH4. 0.7-1.0 ML GeHx (x = 0-3) is deposited by thermally cracking GeH4 on a hot tungsten filament. Ge oxidation and bonding are studied at 300-1000 K with X-ray photoelectron spectroscopy (XPS). Ge, GeH, GeO, and GeO2 desorption are measured with temperature programmed desorption (TPD) at 400-1000 K. Ge initially reacts with the dielectric forming an oxide layer followed by Ge deposition and formation of nanocrystals in CVD at 870 K. 0.7-1.0 ML GeHx deposited by cracking rapidly forms a contacting oxide layer on HfO2 that is stable from 300-800 K. Ge is fully removed from the HfO2 surface after annealing to 1000 K. These results help explain the stability of Ge nanocrystals in contact with HfO2.

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