Effects of Seeding Over the Microstructure and Stresses of Diamond Thin Films

1999 ◽  
Vol 594 ◽  
Author(s):  
S. Gupta ◽  
G. Morell ◽  
R. S. Katiyar ◽  
D. R. Gilbert ◽  
R. K. Singh
Keyword(s):  
Electron Cyclotron Resonance ◽  
Raman Band ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Interfacial Stress ◽  
Intrinsic Stress ◽  
Seeding Density ◽  
X Ray Diffraction ◽  
Total Stress ◽  
X Ray

AbstractWe have studied diamond films grown by electron cyclotron resonance-assisted chemical vapor deposition (ECR-CVD) at low pressure (1.0 Torr) and temperatures (550–700 °C). These films were grown on seeded Si (111) substrates with different diamond seed densities (0.225, 1.5, 2.3, and 3.1 × 109 nuclei/cm2). Scanning electron microscopy (SEM), X-ray diffraction (XRD) and Raman spectroscopy (RS) were employed to investigate the crystalline quality, diamond yield, and stresses developed in the films as a function of seeding density. Thermal interfacial stress, interactions across grain boundaries, and internal stress were considered in order to account for the total stress observed from the Raman band. We present correlations among seed density, relative amount of non-sp3 phase, O/C ratio, and total intrinsic stress.

Residual stresses in chemical vapor deposition free-standing diamond films by X-ray diffraction analyses

2000 ◽  
Vol 288 (2) ◽  
pp. 217-222 ◽  
Author(s):  
O Durand ◽  
R Bisaro ◽  
C.J Brierley ◽  
P Galtier ◽  
G.R Kennedy ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Residual Stresses ◽  
Vapor Deposition ◽  
Diamond Films ◽  
Chemical Vapor ◽  
X Ray Diffraction ◽  
Free Standing ◽  
X Ray

Optical and physical properties of sputtered Si:Al:O:N films

1992 ◽  
Vol 7 (5) ◽  
pp. 1247-1252 ◽  
Author(s):  
R.W. Knoll ◽  
C.H. Henager
Keyword(s):  
Coefficient Of Thermal Expansion ◽  
Structural Characteristics ◽  
Amorphous Film ◽  
Elastic Stiffness ◽  
Intrinsic Stress ◽  
X Ray Diffraction ◽  
Total Stress ◽  
X Ray ◽  
Stress Components ◽  
Si Addition

Mechanical and optical properties and structural characteristics are described for Si:N films with Al and O additions (SixAl1−xOyN1−y) deposited by reactive RF diode sputtering on Si and SiO2 substrates. The thermal and intrinsic stress components, elastic stiffness, coefficient of thermal expansion (CTE), and refractive index were measured for films ranging in thickness from ∼2 μm to 50 μm. Some structural and microstructural data were obtained using x-ray diffraction, optical and scanning-electron microscopy, and surface profilometry. Alloying Si:N with Al to form Si:Al:N greatly reduced the compressive intrinsic and total stress found in pure Si:N films on Si. Addition of O to the Si:Al:N moderately increased the intrinsic stress, decreased the elastic stiffness, and produced a smoother, more glassy (amorphous) film.

Application of a Thermobalance for studying Deposition kinetics of Diamond Films

1989 ◽  
Vol 162 ◽  
Author(s):  
Jerry Czarnecki ◽  
David Thumim
Keyword(s):  
Diamond Films ◽  
Chemical Vapor ◽  
Carbon Films ◽  
X Ray Diffraction ◽  
X Ray ◽  
Deposition Kinetics ◽  
Oxidation Rates ◽  
Exponential Increase ◽  
Hot Filament ◽  
Kinetics Of

ABSTRACTWeight recording using a thermobalance type Cahn TG-171 has been applied to study Hot, Filament Enhanced Chemical Vapor Deposition (HFCVD) of carbon films from methane. Changes in the deposition rates during each individual process may indicate four stages of the deposition kinetics: 1- generation of nuclei (slow, linear); 2- growth on nuclei (exponential increase); 3- aggregation of crystals (slowing); 4- growth on the surface of diamond film, completely covering the substrate (linear). An attempt to determine the concentration of graphite in the deposited layer, based on differences in oxidation rates of diamond and graphite has been proposed, as supplementary to X-ray diffraction and Raman spectroscopy.

SYNTHESIS OF DIAMOND FILMS ON MOLYBDENUM SUBSTRATE SURFACE BY COMBUSTION FLAME

2006 ◽  
Vol 20 (25n27) ◽  
pp. 3926-3931 ◽  
Author(s):  
MAMORU TAKAHASHI ◽  
OSAMU KAMIYA ◽  
TADASHI OHYOSHI
Keyword(s):  
High Temperature ◽  
Low Temperature ◽  
Substrate Surface ◽  
Diamond Films ◽  
Synthesis Temperature ◽  
Interfacial Stress ◽  
X Ray Diffraction ◽  
Thermally Induced ◽  
X Ray ◽  
Combustion Flame

Diamond films were synthesized on a Mo substrate using combustion flame. During the cooling process, most diamond films delaminated. From previous work it was shown that diamond films delaminated at a synthesis temperature less than 1300K (low temperature), and films did not delaminate at synthesis temperature more than 1400K (high temperature). In this study, to clarify the influences on the delamination of the interface, films synthesized at high temperature and low temperature were investigated by SEM and X-ray diffraction. The results show that in the case of low temperature, diamond films were synthesized on the Mo substrate, case of high temperature, Mo 2 C and diamond phases were synthesized on the Mo substrate. Thermally induced interfacial stress occurs due to the thermal expansion mismatch between the synthesized film and the Mo substrate. The interfacial stress by high temperature and low temperature was determined as the cause of the delamination. Thus, the interfacial stress of each synthesized temperature was calculated by a finite element method. The results show that the interfacial stress in the film synthesized by high temperature was smaller than that by the low temperature. As the buffer phases prevent the delamination, synthesized films by high temperature will be useful as hardcoating layer for a metal surface.

A Study of Stress in Microwave Plasma Chemical Vapor Deposited Diamond Films Using X-Ray Diffraction

1997 ◽  
Vol 3 (3) ◽  
pp. 129-135 ◽  
Author(s):  
M. Shahidul Haque ◽  
Hameed A. Naseem ◽  
Ajay P. Malshe ◽  
William D. Brown
Keyword(s):  
Microwave Plasma ◽  
Diamond Films ◽  
Chemical Vapor ◽  
X Ray Diffraction ◽  
Plasma Chemical ◽  
X Ray ◽  
Chemical Vapor Deposited

Morphology of heavily B-doped diamond films

1993 ◽  
Vol 8 (11) ◽  
pp. 2845-2857 ◽  
Author(s):  
Koichi Miyata ◽  
Kazuo Kumagai ◽  
Kozo Nishimura ◽  
Koji Kobashi
Keyword(s):  
Vapor Deposition ◽  
Microwave Plasma ◽  
Diamond Films ◽  
Chemical Vapor ◽  
X Ray Diffraction ◽  
Plasma Chemical ◽  
X Ray ◽  
Plasma Chemical Vapor Deposition ◽  
Si Substrates ◽  
Surface Morphologies

B-doped diamond films were synthesized by microwave plasma chemical vapor deposition using a mixture of methane (0.5% or 1.2%) and diborane (B2H6) below 50 ppm on either Si substrates or undoped diamond films that had been synthesized using 0.5% or 1.2% methane. The surface morphologies of the synthesized films were observed by Secondary Electron Microscopy, and the infrared absorption and Raman spectra were measured. It was found that when diborane concentration was low, B-doped films preferred (111) facets. On the other hand, high diborane concentrations resulted in a deposition of needle-like material that was identified as graphite by x-ray diffraction.

Growth of highly (111)-oriented, highly coalesced diamond films on platinum (111) surface: A possibility of heteroepitaxy

1996 ◽  
Vol 11 (12) ◽  
pp. 2955-2956 ◽  
Author(s):  
Yoshihiro Shintani
Keyword(s):  
Electron Microscopy ◽  
Vapor Deposition ◽  
Microwave Plasma ◽  
Diamond Films ◽  
Chemical Vapor ◽  
X Ray Diffraction ◽  
Plasma Chemical ◽  
X Ray ◽  
Plasma Chemical Vapor Deposition ◽  
Scanning Electron

A highly (111)-oriented, highly coalesced diamond film was grown on platinum (111) surface by microwave plasma chemical vapor deposition (MPCVD). Scanning electron microscopy and x-ray diffraction analyses revealed that the (111) diamond facets were azimuthally oriented epitaxially with respect to the orientation of the Pt(111) domain underneath, with the neighboring facets of diamond being coalesced with each other. The film was confirmed as diamond using Raman spectroscopy.

STUDY OF EPITAXIAL GROWTH OF DIAMOND FILM ON HETERO-MATERIAL SUBSTRATE

2005 ◽  
Vol 19 (22) ◽  
pp. 1087-1093
Author(s):  
YUAN LIAO ◽  
QINGXUAN YU ◽  
GUANZHONG WANG ◽  
RONGCHUAN FANG
Keyword(s):  
Epitaxial Growth ◽  
Diamond Film ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Heteroepitaxial Growth ◽  
X Ray Diffraction ◽  
X Ray ◽  
Diamond Crystals ◽  
Initial Nucleation ◽  
Hot Filament

We study the epitaxial growth mechanism of diamond films using various hetero-materials as substrates in a hot-filament chemical vapor deposition (HFCVD) chamber. The same parameters were maintained in the nucleation and growth processes of diamond films on these substrates. The experimental results showed that the dominant orientation of diamond crystals has a relation with that of substrates identified by X-ray diffraction (XRD) and scanning electron microscopy (SEM) techniques. The preference of diamond films on non-diamond substrates is explained as heteroepitaxial growth. We think that the initial nucleation process is the key to the heteroepitaxial growth of diamond film.

Neutron irradiation and annealing of 10B doped chemical vapor deposited diamond films

1995 ◽  
Vol 10 (10) ◽  
pp. 2523-2530 ◽  
Author(s):  
S.A. Khasawinah ◽  
Galina Popovici ◽  
J. Farmer ◽  
T. Sung ◽  
M.A. Prelas ◽  
...  
Keyword(s):  
Vapor Deposition ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Diamond Powder ◽  
Unirradiated Sample ◽  
High Fluence ◽  
X Ray Diffraction ◽  
X Ray ◽  
Chemical Vapor Deposited ◽  
Hot Filament

10B doped diamond films grown by hot filament chemical vapor deposition were neutron irradiated at moderately high fluence levels. The as-irradiated and annealed samples, along with an unirradiated sample, were analyzed using Raman spectroscopy and x-ray diffraction. It was found that a non-diamond amorphous phase was formed on irradiation. This phase transformed back to diamond on annealing. No graphite formation was observed. A comparison with nanodiamond powder was made. A similarity between irradiated diamond films and nanocrystalline diamond powder is discussed.

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