Electrically Pumped Rare Earth Doped Semiconductor Lasers

1993 ◽  
Vol 301 ◽  
Author(s):  
Jacques I. Pankove ◽  
Robert J. Feuerstein
Keyword(s):  
Rare Earth ◽  
Semiconductor Lasers ◽  
Energy Exchange ◽  
Impact Excitation ◽  
Recombination Energy ◽  
Electrically Pumped ◽  
Luminescent Centers ◽  
Re Elements ◽  
Rare Earth Doped ◽  
Rare Earth Impurities

ABSTRACTThe interest in rare earth (RE) elements as luminescent centers is due to the narrowness and stability of the luminescent transitions. In this paper we review the mechanisms that can be used to electrically excite rare earth impurities in semiconductors: pair recombination energy exchange and impact excitation. The different means of providing energetic electrons for impact excitation are also discussed. We also propose a possible explanation for the temperature dependence of photoluminescence in silicon.

Rare Earth Doped Zinc Oxide Nanowires

2008 ◽  
Vol 8 (1) ◽  
pp. 244-251 ◽  
Author(s):  
S. Geburt ◽  
D. Stichtenoth ◽  
S. Müller ◽  
W. Dewald ◽  
C. Ronning ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
Rare Earth ◽  
Thermal Quenching ◽  
Wide Band ◽  
Wide Band Gap ◽  
Oxide Nanowires ◽  
Defect Sites ◽  
Optical Activation ◽  
Re Elements ◽  
Rare Earth Doped

Zinc oxide (ZnO) nanowires were grown via thermal transport and subsequently doped with different concentrations of Tm, Yb, and Eu using ion implantation and post annealing. High ion fluences lead to morphology changes due to sputtering; however, freestanding nanowires become less damaged compared to those attached to substrates. No other phases like rare earth (RE) oxides were detected, no amorphization occurs in any sample, and homogeneous doping with the desired concentrations was achieved. Photoluminescence measurements demonstrate the optical activation of trivalent RE-elements and the emission of the characteristic intra-4f-luminescence of the respective RE atoms, which could be assigned according to the Dieke-diagram. An increasing RE concentration results into decreasing luminescence intensity caused by energy transfer mechanisms to non-radiative remaining implantation defect sites. Furthermore, low thermal quenching was observed due to the considerable wide band gap of ZnO.

Rare-Earth Doped Epitaxial InGaP and its Optical Properties

1996 ◽  
Vol 422 ◽  
Author(s):  
B. W. Wessels
Keyword(s):  
Optical Properties ◽  
Energy Transfer ◽  
Rare Earth ◽  
Transfer Processes ◽  
Rare Earth Doped ◽  
Rare Earth Impurities

AbstractThe optical properties of rare-earth impurities in InGaP and the factors which influence their luminescence efficency are presented. Basic energy transfer processes are described. Practical devices that utilize characteristic rare-earth luminescence are reported.

Excitonic Mechanism of Rare Earth Excitation in II-VI and IH-V Semiconductors

1992 ◽  
Vol 262 ◽  
Author(s):  
Marek Godlewski
Keyword(s):  
Rare Earth ◽  
High Field ◽  
Impact Ionization ◽  
Excitation Mechanism ◽  
Carrier Trapping ◽  
Rare Earth Doped ◽  
Rare Earth Impurities ◽  
Excitonic Mechanism

ABSTRACTIn this paper we analyze processes which may improve the efficiency of low- and high- field electroluminescence devices based on rare earth doped II-VI and III-V semiconductors. The main topicsare the processes which follow impact ionization, i.e., carrier trapping and/or exciton binding. Excitonic excitation mechanism is shown to occur also for ions which are not directly ionized, as observed recently for some rare earth impurities in II-VI and III-V semiconductors.

Properties and Structure Investigation of Rare Earth-Doped Zinc Aluminum Silica-Phosphate Glasses

2012 ◽  
Vol 509 ◽  
pp. 150-151
Author(s):  
H.Y. Ciang ◽  
S.M. Hsu ◽  
S.W. Yung ◽  
Y.J. Chen ◽  
C.H. Lin ◽  
...  
Keyword(s):  
Rare Earth ◽  
Structural Properties ◽  
Network Structure ◽  
Aluminum Phosphate ◽  
Phosphate Glasses ◽  
Structure Investigation ◽  
Absorption Intensity ◽  
Re Elements ◽  
The Impact ◽  
Rare Earth Doped

This study explores a series of optical, thermal, and structural properties based on zinc-aluminum phosphate glasses that doped with varied rare earth (RE) elements Yb2O3 and P2O5 components replaced by SiO2. It was found that for 60P glasses system, 7 mol% Yb2O3 doped has the maximum fluorescence but quenching when Yb2O3 is doped up to 9 mol%. In addition, with increasing the content of Yb2O3 the absorption intensity increased. According to Raman spectra, we found the Yb3+ and Si4+ ions for the impact of network structure of glass, SiO2 added to make the network structure of phosphate glasses at 450-500cm-1 and 600-650cm-1 were formed O-T-O bond and T-O-T bond(T=Si, Al).

Movpe of Rare Earth Doped III-V Semiconductors

1993 ◽  
Vol 301 ◽  
Author(s):  
F. Scholz ◽  
J. Weber ◽  
K. Pressel ◽  
A. Dörnen
Keyword(s):  
Rare Earth ◽  
Atmospheric Pressure ◽  
Lattice Site ◽  
Compound Semiconductors ◽  
The Novel ◽  
Regular Lattice ◽  
Regular Lattice Site ◽  
Re Elements ◽  
Rare Earth Doped ◽  
Metalorganic Compounds

ABSTRACTDifferent III-V compound semiconductors have been doped with the rare earth (RE) elements Yb, Er, and Tm using atmospheric pressure metalorganic vapor phase epitaxy. Best results have been obtained using the novel metalorganic compounds tris-isopropyl-cyclopentadienyl-RE as precursors which have an acceptable vapor pressure and can be used as liquids at bubbler temperatures of 60°-90°C. Only Yb has been found to occupy a regular lattice site in InP, whereas the other RE show complex optical spectra because of their incorporation in form of different centers and clusters.

Waveguide amplifiers in rare-earth doped glasses : fabrication, characterisation [MATH] modelling

1994 ◽  
Vol 04 (C4) ◽  
pp. C4-277-C4-280 ◽  
Author(s):  
B. HYDE ◽  
D. BARBIER ◽  
J. HUBNER ◽  
J.-M. JOUANNO ◽  
A. KEVORKIAN ◽  
...  
Keyword(s):  
Rare Earth ◽  
Waveguide Amplifiers ◽  
Doped Glasses ◽  
Rare Earth Doped

SYNTHESIS AND PHOTOLUMINESCENCE STUDIES OF RARE EARTH DOPED [1.5%] CaO

2019 ◽  
Vol 7 (3) ◽  
pp. 37
Author(s):  
JITESH CHANDRAPAL SHARMA ◽  
K. SURESH ◽  
Y. H. GANDHI ◽  
K. V. R. MURTHY ◽  
◽  
...  
Keyword(s):  
Rare Earth ◽  
Photoluminescence Studies ◽  
Rare Earth Doped

Improving VCSEL's & Rare-Earth-Doped Led's.

1998 ◽  
Author(s):  
hyatt M. Gibbs ◽  
Galina Khitrova
Keyword(s):  
Rare Earth ◽  
Rare Earth Doped
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