Rare-Earth Doped Epitaxial InGaP and its Optical Properties
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AbstractThe optical properties of rare-earth impurities in InGaP and the factors which influence their luminescence efficency are presented. Basic energy transfer processes are described. Practical devices that utilize characteristic rare-earth luminescence are reported.
1992 ◽
Vol 117
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pp. 721-726
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2016 ◽
Vol 170
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pp. 770-777
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1997 ◽
Vol 56
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pp. 14344-14351
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2021 ◽
Vol 1120
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pp. 012003
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2016 ◽
Vol 46
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pp. 687-708
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