Rare-Earth Doped Epitaxial InGaP and its Optical Properties

1996 ◽  
Vol 422 ◽  
Author(s):  
B. W. Wessels

AbstractThe optical properties of rare-earth impurities in InGaP and the factors which influence their luminescence efficency are presented. Basic energy transfer processes are described. Practical devices that utilize characteristic rare-earth luminescence are reported.

1992 ◽  
Vol 117 (1-4) ◽  
pp. 721-726 ◽  
Author(s):  
D. Hommel ◽  
W. Busse ◽  
H.-E. Gumlich ◽  
D. Suisky ◽  
J. Röseler

2007 ◽  
Vol 40 (2) ◽  
pp. 271-292 ◽  
Author(s):  
M. Malinowski ◽  
M. Nakielska ◽  
R. Piramidowicz ◽  
J. Sarnecki

2016 ◽  
Vol 46 (2) ◽  
pp. 687-708 ◽  
Author(s):  
Ayush Khare ◽  
Shubhra Mishra ◽  
D. S. Kshatri ◽  
Sanjay Tiwari

2004 ◽  
Vol 458 (1-2) ◽  
pp. 274-280 ◽  
Author(s):  
H. Guo ◽  
W. Zhang ◽  
L. Lou ◽  
A. Brioude ◽  
J. Mugnier

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