Movpe of Rare Earth Doped III-V Semiconductors

1993 ◽  
Vol 301 ◽  
Author(s):  
F. Scholz ◽  
J. Weber ◽  
K. Pressel ◽  
A. Dörnen
Keyword(s):  
Rare Earth ◽  
Atmospheric Pressure ◽  
Lattice Site ◽  
Compound Semiconductors ◽  
The Novel ◽  
Regular Lattice ◽  
Regular Lattice Site ◽  
Re Elements ◽  
Rare Earth Doped ◽  
Metalorganic Compounds

ABSTRACTDifferent III-V compound semiconductors have been doped with the rare earth (RE) elements Yb, Er, and Tm using atmospheric pressure metalorganic vapor phase epitaxy. Best results have been obtained using the novel metalorganic compounds tris-isopropyl-cyclopentadienyl-RE as precursors which have an acceptable vapor pressure and can be used as liquids at bubbler temperatures of 60°-90°C. Only Yb has been found to occupy a regular lattice site in InP, whereas the other RE show complex optical spectra because of their incorporation in form of different centers and clusters.

Rare Earth Doped Zinc Oxide Nanowires

2008 ◽  
Vol 8 (1) ◽  
pp. 244-251 ◽  
Author(s):  
S. Geburt ◽  
D. Stichtenoth ◽  
S. Müller ◽  
W. Dewald ◽  
C. Ronning ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
Rare Earth ◽  
Thermal Quenching ◽  
Wide Band ◽  
Wide Band Gap ◽  
Oxide Nanowires ◽  
Defect Sites ◽  
Optical Activation ◽  
Re Elements ◽  
Rare Earth Doped

Zinc oxide (ZnO) nanowires were grown via thermal transport and subsequently doped with different concentrations of Tm, Yb, and Eu using ion implantation and post annealing. High ion fluences lead to morphology changes due to sputtering; however, freestanding nanowires become less damaged compared to those attached to substrates. No other phases like rare earth (RE) oxides were detected, no amorphization occurs in any sample, and homogeneous doping with the desired concentrations was achieved. Photoluminescence measurements demonstrate the optical activation of trivalent RE-elements and the emission of the characteristic intra-4f-luminescence of the respective RE atoms, which could be assigned according to the Dieke-diagram. An increasing RE concentration results into decreasing luminescence intensity caused by energy transfer mechanisms to non-radiative remaining implantation defect sites. Furthermore, low thermal quenching was observed due to the considerable wide band gap of ZnO.

Processing of rare earth doped GaN with ion beams

2003 ◽  
Vol 798 ◽  
Author(s):  
K. Lorenz ◽  
U. Wahl ◽  
E. Alves ◽  
T. Wojtowicz ◽  
P. Ruterana ◽  
...  
Keyword(s):  
Rare Earth ◽  
Room Temperature ◽  
Lattice Site ◽  
Rutherford Backscattering Spectrometry ◽  
Structural Defects ◽  
Site Location ◽  
Transmission Electron ◽  
Infra Red ◽  
Optical Activation ◽  
Rare Earth Doped

ABSTRACTGaN epilayers grown by MOCVD were implanted with different fluences of thulium at room temperature and at 500 °C in order to find the optimum implantation conditions. Rutherford backscattering spectrometry in the channeling mode was used to monitor the damage evolution in the Ga-sublattice and to establish the lattice site location of the thulium ions. The nature of structural defects was studied with transmission electron microscopy and the optical properties of the samples with room temperature cathodoluminescence. The introduced damage could be significantly reduced by implantation at high temperature for fluences up to 5×1015 Tm/cm2. Annealing was necessary for optical activation of the implanted samples, in all cases. After annealing, sharp rare earth related emissions were observed in the blue and in the near infra-red spectral region.

Properties and Structure Investigation of Rare Earth-Doped Zinc Aluminum Silica-Phosphate Glasses

2012 ◽  
Vol 509 ◽  
pp. 150-151
Author(s):  
H.Y. Ciang ◽  
S.M. Hsu ◽  
S.W. Yung ◽  
Y.J. Chen ◽  
C.H. Lin ◽  
...  
Keyword(s):  
Rare Earth ◽  
Structural Properties ◽  
Network Structure ◽  
Aluminum Phosphate ◽  
Phosphate Glasses ◽  
Structure Investigation ◽  
Absorption Intensity ◽  
Re Elements ◽  
The Impact ◽  
Rare Earth Doped

This study explores a series of optical, thermal, and structural properties based on zinc-aluminum phosphate glasses that doped with varied rare earth (RE) elements Yb2O3 and P2O5 components replaced by SiO2. It was found that for 60P glasses system, 7 mol% Yb2O3 doped has the maximum fluorescence but quenching when Yb2O3 is doped up to 9 mol%. In addition, with increasing the content of Yb2O3 the absorption intensity increased. According to Raman spectra, we found the Yb3+ and Si4+ ions for the impact of network structure of glass, SiO2 added to make the network structure of phosphate glasses at 450-500cm-1 and 600-650cm-1 were formed O-T-O bond and T-O-T bond(T=Si, Al).

Electrically Pumped Rare Earth Doped Semiconductor Lasers

1993 ◽  
Vol 301 ◽  
Author(s):  
Jacques I. Pankove ◽  
Robert J. Feuerstein
Keyword(s):  
Rare Earth ◽  
Semiconductor Lasers ◽  
Energy Exchange ◽  
Impact Excitation ◽  
Recombination Energy ◽  
Electrically Pumped ◽  
Luminescent Centers ◽  
Re Elements ◽  
Rare Earth Doped ◽  
Rare Earth Impurities

ABSTRACTThe interest in rare earth (RE) elements as luminescent centers is due to the narrowness and stability of the luminescent transitions. In this paper we review the mechanisms that can be used to electrically excite rare earth impurities in semiconductors: pair recombination energy exchange and impact excitation. The different means of providing energetic electrons for impact excitation are also discussed. We also propose a possible explanation for the temperature dependence of photoluminescence in silicon.

Waveguide amplifiers in rare-earth doped glasses : fabrication, characterisation [MATH] modelling

1994 ◽  
Vol 04 (C4) ◽  
pp. C4-277-C4-280 ◽  
Author(s):  
B. HYDE ◽  
D. BARBIER ◽  
J. HUBNER ◽  
J.-M. JOUANNO ◽  
A. KEVORKIAN ◽  
...  
Keyword(s):  
Rare Earth ◽  
Waveguide Amplifiers ◽  
Doped Glasses ◽  
Rare Earth Doped

SYNTHESIS AND PHOTOLUMINESCENCE STUDIES OF RARE EARTH DOPED [1.5%] CaO

2019 ◽  
Vol 7 (3) ◽  
pp. 37
Author(s):  
JITESH CHANDRAPAL SHARMA ◽  
K. SURESH ◽  
Y. H. GANDHI ◽  
K. V. R. MURTHY ◽  
◽  
...  
Keyword(s):  
Rare Earth ◽  
Photoluminescence Studies ◽  
Rare Earth Doped

Improving VCSEL's & Rare-Earth-Doped Led's.

1998 ◽  
Author(s):  
hyatt M. Gibbs ◽  
Galina Khitrova
Keyword(s):  
Rare Earth ◽  
Rare Earth Doped
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