Excitonic Mechanism of Rare Earth Excitation in II-VI and IH-V Semiconductors

1992 ◽  
Vol 262 ◽  
Author(s):  
Marek Godlewski
Keyword(s):  
Rare Earth ◽  
High Field ◽  
Impact Ionization ◽  
Excitation Mechanism ◽  
Carrier Trapping ◽  
Rare Earth Doped ◽  
Rare Earth Impurities ◽  
Excitonic Mechanism

ABSTRACTIn this paper we analyze processes which may improve the efficiency of low- and high- field electroluminescence devices based on rare earth doped II-VI and III-V semiconductors. The main topicsare the processes which follow impact ionization, i.e., carrier trapping and/or exciton binding. Excitonic excitation mechanism is shown to occur also for ions which are not directly ionized, as observed recently for some rare earth impurities in II-VI and III-V semiconductors.

Impact ionization in rare earth doped CdF2crystals

1983 ◽  
Vol 72 (1-4) ◽  
pp. 265-269
Author(s):  
V. Dallacasa ◽  
C. Paracchini
Keyword(s):  
Rare Earth ◽  
Impact Ionization ◽  
Rare Earth Doped

Rare-Earth Doped Epitaxial InGaP and its Optical Properties

1996 ◽  
Vol 422 ◽  
Author(s):  
B. W. Wessels
Keyword(s):  
Optical Properties ◽  
Energy Transfer ◽  
Rare Earth ◽  
Transfer Processes ◽  
Rare Earth Doped ◽  
Rare Earth Impurities

AbstractThe optical properties of rare-earth impurities in InGaP and the factors which influence their luminescence efficency are presented. Basic energy transfer processes are described. Practical devices that utilize characteristic rare-earth luminescence are reported.

High-field magnetoresistance of noble metals containing rare-earth impurities

1981 ◽  
Vol 24 (1) ◽  
pp. 7-22 ◽  
Author(s):  
J.C. Ousset ◽  
G. Carrere ◽  
J.P. Ulmet ◽  
S. Askenazy ◽  
G. Creuzet ◽  
...  
Keyword(s):  
Rare Earth ◽  
High Field ◽  
Noble Metals ◽  
Rare Earth Impurities

Electrically Pumped Rare Earth Doped Semiconductor Lasers

1993 ◽  
Vol 301 ◽  
Author(s):  
Jacques I. Pankove ◽  
Robert J. Feuerstein
Keyword(s):  
Rare Earth ◽  
Semiconductor Lasers ◽  
Energy Exchange ◽  
Impact Excitation ◽  
Recombination Energy ◽  
Electrically Pumped ◽  
Luminescent Centers ◽  
Re Elements ◽  
Rare Earth Doped ◽  
Rare Earth Impurities

ABSTRACTThe interest in rare earth (RE) elements as luminescent centers is due to the narrowness and stability of the luminescent transitions. In this paper we review the mechanisms that can be used to electrically excite rare earth impurities in semiconductors: pair recombination energy exchange and impact excitation. The different means of providing energetic electrons for impact excitation are also discussed. We also propose a possible explanation for the temperature dependence of photoluminescence in silicon.

High field magnetoresistance of silver containing rare-earth impurities

1979 ◽  
Vol 40 (C5) ◽  
pp. C5-40-C5-41
Author(s):  
J. C. Ousset ◽  
G. Creuzet ◽  
A. Fert
Keyword(s):  
Rare Earth ◽  
High Field ◽  
Rare Earth Impurities

Study of segregation in La1.8Sr0.2CuO4 superconductor by STEM-EDS microanalysis

1987 ◽  
Vol 45 ◽  
pp. 54-55
Author(s):  
T. F. Kelly ◽  
P. J. Lee ◽  
E. E. Hellstrom ◽  
D. C. Larbalestier
Keyword(s):  
Rare Earth ◽  
High Field ◽  
Transport Current ◽  
Total Thickness ◽  
New Class ◽  
Ceramic Superconductors ◽  
Current Densities ◽  
Group Ii ◽  
Eds Microanalysis

Recently there has been much excitement over a new class of high Tc (>30 K) ceramic superconductors of the form A1-xBxCuO4-x, where A is a rare earth and B is from Group II. Unfortunately these materials have only been able to support small transport current densities 1-10 A/cm2. It is very desirable to increase these values by 2 to 3 orders of magnitude for useful high field applications. The reason for these small transport currents is as yet unknown. Evidence has, however, been presented for superconducting clusters on a 50-100 nm scale and on a 1-3 μm scale. We therefore planned a detailed TEM and STEM microanalysis study in order to see whether any evidence for the clusters could be seen.A La1.8Sr0.2Cu04 pellet was cut into 1 mm thick slices from which 3 mm discs were cut. The discs were subsequently mechanically ground to 100 μm total thickness and dimpled to 20 μm thickness at the center.

Waveguide amplifiers in rare-earth doped glasses : fabrication, characterisation [MATH] modelling

1994 ◽  
Vol 04 (C4) ◽  
pp. C4-277-C4-280 ◽  
Author(s):  
B. HYDE ◽  
D. BARBIER ◽  
J. HUBNER ◽  
J.-M. JOUANNO ◽  
A. KEVORKIAN ◽  
...  
Keyword(s):  
Rare Earth ◽  
Waveguide Amplifiers ◽  
Doped Glasses ◽  
Rare Earth Doped

SYNTHESIS AND PHOTOLUMINESCENCE STUDIES OF RARE EARTH DOPED [1.5%] CaO

2019 ◽  
Vol 7 (3) ◽  
pp. 37
Author(s):  
JITESH CHANDRAPAL SHARMA ◽  
K. SURESH ◽  
Y. H. GANDHI ◽  
K. V. R. MURTHY ◽  
◽  
...  
Keyword(s):  
Rare Earth ◽  
Photoluminescence Studies ◽  
Rare Earth Doped
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