High Temperature Implantation of Single Crystal Beta Silicon Carbide Thin Films

1986 ◽  
Vol 77 ◽  
Author(s):  
J. A. Edmond ◽  
S. P. Withrow ◽  
W. Wadlin ◽  
R. F. Davis
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Ionic Species ◽  
Differential Capacitance ◽  
Electrical Activation ◽  
Ion Channeling ◽  
Structural And Electrical Properties ◽  
Lattice Damage ◽  
P Type

ABSTRACTIons of aluminum, gallium and nitrogen were implanted into (100) oriented β-SiC thin films at temperatures of 623K, 823K and 1023K. Rutherford backscattering/ion channeling analyses revealed that implantation of any one of the ionic species at 623K resulted in only slight crystal lattice damage. In comparison, implantation conducted using the same dosimetry and energy at room temperature resulted in extensive lattice damage; in the case of gallium, amorphization occurred. The backscattered yield from samples implanted at 1023K was nearly that of a virgin aligned spectra. This in situ annealing effect did not, however, result in the complete electrical activation of implanted species. In order to increase the percent of electrical activation, samples were annealed at 1473K for 1800s following implantation. Differential capacitance-voltage, spreading resistance and sheet resistance measurements were made in order to electrically characterize these layers. These measurements indicated the activation of p-type and n-type species in samples implanted with aluminum or gallium and nitrogen, respectively. The authors have previously reported p-type formation in β-SiC implanted with aluminum at room temperature following a 2073K - 300s anneal. By heating to 1023K during implantation and annealing at 1473K after implantation, improved structural and electrical properties have been achieved.

scholarly journals Electrical properties of pure NiO and NiO:Au thin films prepared by using pulsed laser deposition

2019 ◽  
Vol 14 (29) ◽  
pp. 37-43 ◽  
Author(s):  
Raied K. Jamal
Keyword(s):  
Thin Films ◽  
Activation Energy ◽  
Electrical Properties ◽  
Transport Mechanism ◽  
Room Temperature ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Concentration Increase ◽  
Annealing Temperatures ◽  
P Type

The electrical properties of pure NiO and NiO:Au Films which aredeposited on glass substrate with various dopant concentrations(1wt.%, 2wt%, 3wt.% and 4wt.%) at room temperature 450 Coannealing temperature will be presented. The results of the hall effectshowed that all the films were p-type. The Hall mobility decreaseswhile both carrier concentration and conductivity increases with theincreasing of annealing temperatures and doping percentage, Thus,indicating the behavior of semiconductor, and also the D.Cconductivity from which the activation energy decrease with thedoping concentration increase and transport mechanism of the chargecarriers can be estimated.

Enhanced transmittance and mobility of p-type copper iodide thin films prepared at room temperature via a layer-by-layer approach

2019 ◽  
Vol 361 ◽  
pp. 396-402 ◽  
Author(s):  
Fangjuan Geng ◽  
Lei Yang ◽  
Bing Dai ◽  
Shuai Guo ◽  
Gang Gao ◽  
...  
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Layer By Layer ◽  
Copper Iodide ◽  
P Type

scholarly journals Lattice Damage in Ion-Implanted Compound Semiconductors and Its Effect on Electrical Activation

1993 ◽  
Vol 300 ◽  
Author(s):  
T. E. Haynes ◽  
R. Morton ◽  
S. S. Lau
Keyword(s):  
Point Defect ◽  
Compound Semiconductors ◽  
Electrical Activation ◽  
Electrical Performance ◽  
Ion Channeling ◽  
Independent Observations ◽  
Lattice Damage ◽  
Defect Interactions ◽  
Ion Species ◽  
Ion Implanted

ABSTRACTIn recent years, a number of experimental observations have indicated that interactions between mobile point defects generated during ion implantation play an important role in the damage production in Ill-V compound semiconductors, and particularly GaAs. This paper reviews a set of such observations based on ion channeling measurements of the lattice damage in GaAs implanted with Si ions. Selected independent observations are also surveyed to illustrate the importance of point-defect interactions. Taken together, these show that at least two contributions to the lattice damage must often be considered: a “prompt” contribution attributed to direct-impact amorphization, and a “delayed” contribution attributed to point-defect clustering. New measurements are then described which show the different effects that these two damage components have on the electrical activation in annealed, Siimplanted GaAs. The aim is to indicate the potential to exploit the balance between these two damage contributions in order to improve the electrical performance and reproducibility of ion-implanted and annealed layers. Finally, the applicability of these concepts to other ion species and other compound semiconductors (GaP and InP) is briefly discussed.

scholarly journals In situ deformation of nanocrystalline Al2O3 thin films at room temperature

2016 ◽  
pp. 195-196
Author(s):  
Erkka Frankberg ◽  
Lucile Joly-Pottuz ◽  
Francisco Garcia ◽  
Turkka Salminen ◽  
Thierry Douillard ◽  
...  
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
In Situ Deformation

scholarly journals In situ tuning of magnetization via topotactic lithium insertion in ordered mesoporous lithium ferrite thin films

2016 ◽  
Vol 4 (38) ◽  
pp. 8889-8896 ◽  
Author(s):  
Christian Reitz ◽  
Christian Suchomski ◽  
Di Wang ◽  
Horst Hahn ◽  
Torsten Brezesinski
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Lithium Ferrite ◽  
Lithium Insertion ◽  
Ordered Mesoporous ◽  
Ferrite Thin Films

Topotactic Li insertion into polymer-templated mesostructured α-LiFe5O8 thin films allows for the intriguing possibility of tuning the magnetization at room temperature.

Phase Transformations in Sol-Gel PZT Thin Films

2000 ◽  
Vol 623 ◽  
Author(s):  
D.P. Eakin ◽  
M.G. Norton ◽  
D.F. Bahr
Keyword(s):  
Thin Films ◽  
Heat Treatment ◽  
Room Temperature ◽  
Structural Changes ◽  
Sol Gel ◽  
Ex Situ ◽  
Ambient Conditions ◽  
Crystalline Films ◽  
In Situ Heating

AbstractThin films of PZT were deposited onto platinized and bare single crystal NaCl using spin coating and sol-gel precursors. These films were then analyzed using in situ heating in a transmission electron microscope. The results of in situ heating are compared with those of an ex situ heat treatment in a standard furnace, mimicking the heat treatment given to entire wafers of these materials for use in MEMS and ferroelectric applications. Films are shown to transform from amorphous to nanocrystalline over the course of days when held at room temperature. While chemical variations are found between films crystallized in ambient conditions and films crystallized in the vacuum conditions of the microscope, the resulting crystal structures appear to be insensitive to these differences. Significant changes in crystal structure are found at 500°C, primarily the change from largely amorphous to the beginnings of clearly crystalline films. Crystallization does occur over the course of weeks at room temperature in these films. Structural changes are more modest in these films when heated in the TEM then those observed on actual wafers. The presence of Pt significantly influences both the resulting structure and morphology in both in situ and ex situ heated films. Without Pt present, the films appear to form small, 10 nm grains consisting of both cubic and tetragonal phases, whereas in the case of the Pt larger, 100 nm grains of a tetragonal phase are formed.

Structural and Electrical Properties of P—Type ZnO Thin Films

2008 ◽  
Author(s):  
H. Abdul Hamid ◽  
M. J. Abdullah ◽  
A. Abdul Aziz ◽  
H. B. Senin ◽  
G. Carini ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Zno Thin Films ◽  
Structural And Electrical Properties ◽  
P Type

Structural and electrical properties of magnetron sputtered Ti(ON) thin films: The case of TiN doped in situ with oxygen

2009 ◽  
Vol 194 (1) ◽  
pp. 93-103 ◽  
Author(s):  
A. Trenczek-Zajac ◽  
M. Radecka ◽  
K. Zakrzewska ◽  
A. Brudnik ◽  
E. Kusior ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Structural And Electrical Properties

p-Type Field Effect Transistor and UV-Photoconductive Characteristics of Na Doped ZnMgO Thin Films

2013 ◽  
Vol 668 ◽  
pp. 681-685
Author(s):  
Ya Xue ◽  
Hai Ping He ◽  
Zhi Zhen Ye
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Carrier Mobility ◽  
Room Temperature ◽  
Zno Films ◽  
Electrical Measurements ◽  
Acceptor Dopant ◽  
Znmgo Thin Film ◽  
Effect Transistor ◽  
P Type

In this study, the authors have presented results for fabricated ZnO based FET and the UV-photoconductive characteristics of Na doped ZnMgO thin films. The electrical measurements confirmed that the conductivity of the Na doped ZnMgO thin film is p-type, and the carrier mobility was estimated to be 2.3 cm2V-1S-1. Moreover, after exposed to the 365 nm ultraviolet light, the Na doped ZnMgO thin films still exhibited p-type behavior under gate voltage ranging from -5 to 2 V, and the Id increased a little while the carrier mobility did not change much. The photocurrent was measured under a bias of 6 V in air at room temperature. The films performed a higher current intensity after the illumination. The instantaneous rise of the photocurrent was completed when exposed to the 365 nm ultraviolet for 20 s, after switching the ultraviolet off the photocurrent decayed in a slower rate. The enhance rate of photocurrent was about 1.33 %. Conclusively, Na is a considerable acceptor dopant for making high quality p-type ZnO films, and the tiny change in the photocurrent of p-type Na doped ZnMgO thin film made it relatively stable when fabricating LEDs and other optoelectronic devices.

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