Low-Temperature Fabrication (≤150 °C) of High-Quality Sputtered Silicon Oxide Thin Film with Hydrogen Plasma Treatment

2020 ◽  
Vol 2 (10) ◽  
pp. 3320-3326
Author(s):  
Taewon Seo ◽  
Hyuk Park ◽  
Gilsu Jeon ◽  
Juyoung Yun ◽  
Seongmin Park ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Plasma Treatment ◽  
Silicon Oxide ◽  
Hydrogen Plasma ◽  
Oxide Thin Film ◽  
High Quality

Study of Atmospheric-Pressure Plasma Enhanced Chemical Vapor Deposition Fabricated Indium Gallium Zinc Oxide Thin Film Transistors with In-Situ Hydrogen Plasma Treatment

2020 ◽  
Vol 20 (7) ◽  
pp. 4110-4113 ◽  
Author(s):  
Yi-Ming Chen ◽  
Chien-Hung Wu ◽  
Kow-Ming Chang ◽  
Yu-Xin Zhang ◽  
Ni Xu ◽  
...  
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Plasma Treatment ◽  
Atmospheric Pressure ◽  
Thin Film Transistors ◽  
Hydrogen Plasma ◽  
Atmospheric Pressure Plasma ◽  
Oxide Thin Film ◽  
Pressure Plasma

Amorphous InGaZnO (a-IGZO) Thin Film Transistors (TFTs) has been studied extensively for their perspective applications in next generation active-matrix displays such as liquid crystal displays and flat-panel displays, due to its better field-effect mobility (>10 cm2/V · S), larger Ion/Ioff ratio (>106), and better stability electrical. Hydrogen is known as shallow donors for n-type (channel) oxide semiconductors (Dong, J.J., et al. 2010. Effects of hydrogen plasma treatment on the electrical and optical properties of Zno films: Identification of hydrogen donors in ZnO. ACS Appl. Mater. Interfaces, 2, pp.1780–1784), and it is also effective passivator for traps (Tsao, S.W., et al., 2010. Hydrogen-induced improvements in electrical characteristics of a-IGZO thin-film transistors. Solid-State Electron, 54, pp.1497–1499). In this study, In-Situ hydrogen plasma is applied to deposit IGZO channel. With atmospheric-pressure PECVD (AP-PECVD), IGZO thin film can be deposited without vacuum system, large area manufacturing, and cost reducing (Chang, K.M., et al., 2011. Transparent conductive indium-doped zinc oxide films prepared by atmospheric pressure plasma jet. Thin Solid Films, 519, pp.5114–5117). The results show that with appropriate flow ratio of Ar/H2 plasma treatment, the a-IGZO TFT device exhibits better performance with mobility (μFE) 19.7 cm2/V · S, threshold voltage (VT) 1.18 V, subthreshold swing (SS) 81 mV/decade, and Ion/Ioff ratio 5.35×107.

Low Temperature Solution-Processed Zinc Tin Oxide Thin Film Transistor with O2 Plasma Treatment

2019 ◽  
Vol 33 (5) ◽  
pp. 283-288 ◽  
Author(s):  
Jeong-Soo Lee ◽  
Yong-Jin Kim ◽  
Yong-Uk Lee ◽  
Seung-Hwan Cho ◽  
Yong-Hoon Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Plasma Treatment ◽  
Tin Oxide ◽  
Thin Film Transistor ◽  
Oxide Thin Film ◽  
Zinc Tin Oxide ◽  
Temperature Solution ◽  
O2 Plasma Treatment ◽  
O2 Plasma

Process Optimization for the Fabrication of the Thin PtSi Schottky Barrier Diode IRCCD

1994 ◽  
Vol 299 ◽  
Author(s):  
Wang-Nang Wang ◽  
Chia Ho ◽  
Jee-Ming Shiue
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Process Optimization ◽  
Hydrogen Plasma ◽  
Wet Etching ◽  
Low Energy ◽  
High Quality ◽  
Plasma Excitation ◽  
Abrupt Junction

AbstractHigh quality abrupt junction PtSi thin film prepared by the MBE system with in situ precleaning and annealing was obtained. Wet etching and low energy hydrogen plasma excitation to generate H-terminated Si surface and low temperature thermal desorption were used to clean the substrate. IRCCD thus fabricated achieved the quantum efficiency 0.8%. TEM, STM/AFM, AES/ESCA, and RBS were used to monitor the fabrication processes.

Low Temperature Formation of Silicon Oxide Thin Film and Modification of Film Quality by Argon Excimer Light

2014 ◽  
Vol 894 ◽  
pp. 408-411
Author(s):  
Kensuke Nishioka ◽  
Kosei Sato ◽  
Takuya Ito ◽  
Yasuyuki Ota
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Oxide Film ◽  
Silicon Oxide ◽  
Silicone Oil ◽  
Uv Light ◽  
High Energy ◽  
Oxide Thin Film ◽  
Silicon Oxide Film ◽  
Ft Ir

Silicon oxide thin film was formed using reaction of spin-coated dimethyl-silicone-oil and 5% ozone gas at low temperature of 300°C. Silicone oil is used for lubrication, insulation, and so on, and it is inexpensive and easy to deal with owing to its stability. FT-IR spectrum of the formed silicon oxide film was similar to that of the thermally oxidized film, and we hardly observed peaks of Si-CH3and C-H bonds originated in silicone oil. The Si-OH bonds in the film were observed. The Si-OH bond causes the degradation of the electric properties of the insulator. In order to remove the Si-OH bonds, the silicon oxide film was treated with an argon excimer light at room temperature. The wavelength of the light was 126 nm. The amount of Si-OH bond was drastically reduced by the UV annealing. The energy of the UV light is high and the value is 9.8 eV. The high energy light may cut the bond of Si-OH. Therefore, the amount of Si-OH bond could be reduced.

Effects of O2 plasma treatment on low temperature solution-processed zinc tin oxide thin film transistors

2013 ◽  
Vol 210 (9) ◽  
pp. 1745-1749 ◽  
Author(s):  
Jeong-Soo Lee ◽  
Seung-Min Song ◽  
Yong-Hoon Kim ◽  
Jang-Yeon Kwon ◽  
Min-Koo Han
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Plasma Treatment ◽  
Tin Oxide ◽  
Thin Film Transistors ◽  
Oxide Thin Film ◽  
Zinc Tin Oxide ◽  
Temperature Solution ◽  
O2 Plasma Treatment ◽  
O2 Plasma

Precursor design and engineering for low-temperature deposition of gate dielectrics for thin film transistors

2011 ◽  
Vol 1287 ◽  
Author(s):  
Anupama Mallikarjunan ◽  
Laura M Matz ◽  
Andrew D Johnson ◽  
Raymond N Vrtis ◽  
Manchao Xiao ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Thin Film Transistors ◽  
Moisture Absorption ◽  
Silicon Oxide ◽  
Chemical Vapor ◽  
Silicon Oxycarbide ◽  
Process Conditions ◽  
Structure Property ◽  
Oh Groups

ABSTRACTThe electrical and physical quality of gate and passivation dielectrics significantly impacts the device performance of thin film transistors (TFTs). The passivation dielectric also needs to act as a barrier to protect the TFT device. As low temperature TFT processing becomes a requirement for novel applications and plastic substrates, there is a need for materials innovation that enables high quality plasma enhanced chemical vapor deposition (PECVD) gate dielectric deposition. In this context, this paper discusses structure-property relationships and strategies for precursor development in silicon nitride, silicon oxycarbide (SiOC) and silicon oxide films. Experiments with passivation SiOC films demonstrate the benefit of a superior precursor (LkB-500) and standard process optimization to enable lower temperature depositions. For gate SiO2 deposition (that are used with polysilicon TFTs for example), organosilicon precursors containing different types and amounts of Si, C, O and H bonding were experimentally compared to the industry standard TEOS (tetraethoxysilane) at different process conditions and temperatures. Major differences were identified in film quality especially wet etch rate or WER (correlating to film density) and dielectric constant (k) values (correlating to moisture absorption). Gate quality SiO2 films can be deposited by choosing precursors that can minimize residual Si-OH groups and enable higher density stable moisture-free films. For e.g., the optimized precursor AP-LTO® 770 is clearly better than TEOS for low temperature PECVD depositions based on density, WER, k charge density (measured by flatband voltage or Vfb); and leakage and breakdown voltage (Vbd) measurements. The design and development of such novel precursors is a key factor to successfully enable manufacturing of advanced low temperature processed devices.

Sign in / Sign up

Export Citation Format

Share Document