Correlation Between Minority Carrier Diffusion Length and Microstructure in a-Si:H Thin Films

1993 ◽  
Vol 297 ◽  
Author(s):  
G. Conte ◽  
G. Fameli ◽  
A. Rubino ◽  
E. Terzini ◽  
F. Villani ◽  
...  
Keyword(s):  
Steady State ◽  
Carrier Transport ◽  
Minority Carrier ◽  
Diffusion Length ◽  
Defect Density ◽  
Hydrogen Distribution ◽  
Steady State Condition ◽  
Hydrogenated Silicon ◽  
Morphological Variations ◽  
Amorphous Hydrogenated Silicon

Aim of this work is to investigate the opto-electronic properties of amorphous hydrogenated silicon (a-Si:H). The deposition temperature nas been used as a driving force to modify the morphology and bonded hydrogen distribution. The influence of the hydrogen microstructure on the carriers μτ product has been examined. The majority and minority carrier μτ have been evaluated from the diffusion length measurement, by using the Steady State Photocarrier Grating (SSPG) technique, and from the photoconductivity in the steady state condition (SSPC). The μτ values have been correlated with the defect density and the Fermi level position. Some considerations are proposed to explain the carrier transport in terms of the compositional inhomogeneities in Si:H alloys due to the morphological variations.

Low defect density amorphous hydrogenated silicon prepared by homogeneous chemical vapor deposition

1982 ◽  
Vol 40 (11) ◽  
pp. 973-975 ◽  
Author(s):  
B. A. Scott ◽  
J. A. Reimer ◽  
R. M. Plecenik ◽  
E. E. Simonyi ◽  
W. Reuter
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Defect Density ◽  
Chemical Vapor ◽  
Hydrogenated Silicon ◽  
Amorphous Hydrogenated Silicon ◽  
Homogeneous Chemical

The Effect of Deposition Procedure on the Conductivity of Hydrogenated Amorphous Silicon Multilayer Films.

1986 ◽  
Vol 70 ◽  
Author(s):  
G. Moddel ◽  
F.-C. Su ◽  
P. E. Vanier
Keyword(s):  
Defect Density ◽  
Multilayer Films ◽  
Oxide Interface ◽  
Hydrogenated Silicon ◽  
Plasma Enhanced Cvd ◽  
Amorphous Hydrogenated Silicon ◽  
Defective Layer ◽  
State Densities ◽  
Continuous Deposition ◽  
Hydrogenated Amorphous

ABSTRACTThe conductivity of multilayer P-doped amorphous hydrogenated silicon (a-Si:H) thin films is measured for films prepared with different, deposition procedures. Multilayer films are deposited by plasma enhanced CVD following a procedure in which the plasma is extinguished and the deposition chamber is filled with air or argon after the deposition of each layer. These films are compared to films grown in continuous deposition runs. The technique provides a direct means to determine the effects of continuous versus interrupted deposition and to analyze oxide interface and bulk gap state densities. Exposing the layers to air between depositions produces deleterious effects whereas the effect of argon exposure are slight. Literature values for the density of states in oxidized a-Si:H are used to provide evidence for a defective layer in very thin P-doped a-Si:H having a defect density of over 1013 cm−2 eV−1 approximately 0.3 eV below the transport level.

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