The influence of the film-substrate interface on the defect density and other properties of sputter-deposited amorphous hydrogenated silicon

1989 ◽  
Vol 36 (12) ◽  
pp. 2848-2852 ◽  
Author(s):  
J. Sopka ◽  
U. Schneider ◽  
B. Schroder ◽  
M. Favre ◽  
F. Finger ◽  
...  
Keyword(s):  
Defect Density ◽  
Hydrogenated Silicon ◽  
Substrate Interface ◽  
Amorphous Hydrogenated Silicon ◽  
Sputter Deposited ◽  
Film Substrate

Low defect density amorphous hydrogenated silicon prepared by homogeneous chemical vapor deposition

1982 ◽  
Vol 40 (11) ◽  
pp. 973-975 ◽  
Author(s):  
B. A. Scott ◽  
J. A. Reimer ◽  
R. M. Plecenik ◽  
E. E. Simonyi ◽  
W. Reuter
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Defect Density ◽  
Chemical Vapor ◽  
Hydrogenated Silicon ◽  
Amorphous Hydrogenated Silicon ◽  
Homogeneous Chemical

The Effect of Deposition Procedure on the Conductivity of Hydrogenated Amorphous Silicon Multilayer Films.

1986 ◽  
Vol 70 ◽  
Author(s):  
G. Moddel ◽  
F.-C. Su ◽  
P. E. Vanier
Keyword(s):  
Defect Density ◽  
Multilayer Films ◽  
Oxide Interface ◽  
Hydrogenated Silicon ◽  
Plasma Enhanced Cvd ◽  
Amorphous Hydrogenated Silicon ◽  
Defective Layer ◽  
State Densities ◽  
Continuous Deposition ◽  
Hydrogenated Amorphous

ABSTRACTThe conductivity of multilayer P-doped amorphous hydrogenated silicon (a-Si:H) thin films is measured for films prepared with different, deposition procedures. Multilayer films are deposited by plasma enhanced CVD following a procedure in which the plasma is extinguished and the deposition chamber is filled with air or argon after the deposition of each layer. These films are compared to films grown in continuous deposition runs. The technique provides a direct means to determine the effects of continuous versus interrupted deposition and to analyze oxide interface and bulk gap state densities. Exposing the layers to air between depositions produces deleterious effects whereas the effect of argon exposure are slight. Literature values for the density of states in oxidized a-Si:H are used to provide evidence for a defective layer in very thin P-doped a-Si:H having a defect density of over 1013 cm−2 eV−1 approximately 0.3 eV below the transport level.

Correlation Between Minority Carrier Diffusion Length and Microstructure in a-Si:H Thin Films

1993 ◽  
Vol 297 ◽  
Author(s):  
G. Conte ◽  
G. Fameli ◽  
A. Rubino ◽  
E. Terzini ◽  
F. Villani ◽  
...  
Keyword(s):  
Steady State ◽  
Carrier Transport ◽  
Minority Carrier ◽  
Diffusion Length ◽  
Defect Density ◽  
Hydrogen Distribution ◽  
Steady State Condition ◽  
Hydrogenated Silicon ◽  
Morphological Variations ◽  
Amorphous Hydrogenated Silicon

Aim of this work is to investigate the opto-electronic properties of amorphous hydrogenated silicon (a-Si:H). The deposition temperature nas been used as a driving force to modify the morphology and bonded hydrogen distribution. The influence of the hydrogen microstructure on the carriers μτ product has been examined. The majority and minority carrier μτ have been evaluated from the diffusion length measurement, by using the Steady State Photocarrier Grating (SSPG) technique, and from the photoconductivity in the steady state condition (SSPC). The μτ values have been correlated with the defect density and the Fermi level position. Some considerations are proposed to explain the carrier transport in terms of the compositional inhomogeneities in Si:H alloys due to the morphological variations.

Light-induced Stability of Layered Amorphous Hydrogenated Silicon Grown with Alternating Substrate Temperature

1996 ◽  
Vol 420 ◽  
Author(s):  
Jong-Hwan Yoona ◽  
Czang-Ho Lee
Keyword(s):  
Substrate Temperature ◽  
Defect Density ◽  
Single Layer ◽  
Light Illumination ◽  
Hydrogenated Silicon ◽  
Layer Film ◽  
Amorphous Hydrogenated Silicon ◽  
Improved Stability ◽  
Single Layer Film ◽  
Hydrogenated Amorphous

AbstractWe present the results of studies on the light-induced stability of undoped layered hydrogenated amorphous silicon films grown with alternating substrate temperature between optimal and non optimal temperatures for device-quality films. Compared to the single layer films grown at optimal substrate temperature, the layered films show improved stability in the lightinduced state. Under intense light illumination of 3 W/cm2, the steady-state defect density of the layered film reached a saturation of 2×1016 cm−3, while the single layer film saturates at about 6×1016 cm−3. It is found that in the completely degraded state the photoconductivity in the layered film is also improved by a factor of two compared to the single layer film.

Parallel Glide: A Fundamentally Different Type of Dislocation Motion in Ultrathin Metal Films

2003 ◽  
Vol 779 ◽  
Author(s):  
T. John Balk ◽  
Gerhard Dehm ◽  
Eduard Arzt
Keyword(s):  
Thermal Cycling ◽  
Grain Boundaries ◽  
Film Surface ◽  
Metal Films ◽  
Geometric Constraints ◽  
Film Stress ◽  
Diffusional Creep ◽  
Creep Model ◽  
Substrate Interface ◽  
Film Substrate

AbstractWhen confronted by severe geometric constraints, dislocations may respond in unforeseen ways. One example of such unexpected behavior is parallel glide in unpassivated, ultrathin (200 nm and thinner) metal films. This involves the glide of dislocations parallel to and very near the film/substrate interface, following their emission from grain boundaries. In situ transmission electron microscopy reveals that this mechanism dominates the thermomechanical behavior of ultrathin, unpassivated copper films. However, according to Schmid's law, the biaxial film stress that evolves during thermal cycling does not generate a resolved shear stress parallel to the film/substrate interface and therefore should not drive such motion. Instead, it is proposed that the observed dislocations are generated as a result of atomic diffusion into the grain boundaries. This provides experimental support for the constrained diffusional creep model of Gao et al.[1], in which they described the diffusional exchange of atoms between the unpassivated film surface and grain boundaries at high temperatures, a process that can locally relax the film stress near those boundaries. In the grains where it is observed, parallel glide can account for the plastic strain generated within a film during thermal cycling. One feature of this mechanism at the nanoscale is that, as grain size decreases, eventually a single dislocation suffices to mediate plasticity in an entire grain during thermal cycling. Parallel glide is a new example of the interactions between dislocations and the surface/interface, which are likely to increase in importance during the persistent miniaturization of thin film geometries.

Pulsed ruby laser accelerated degradation of amorphous hydrogenated silicon

1993 ◽  
Vol 164-166 ◽  
pp. 235-238 ◽  
Author(s):  
O. Klíma ◽  
O. Štika ◽  
Ho Tha Ha ◽  
S. Fouad Abdel Hamied ◽  
J. Stuchlík ◽  
...  
Keyword(s):  
Ruby Laser ◽  
Hydrogenated Silicon ◽  
Accelerated Degradation ◽  
Amorphous Hydrogenated Silicon
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