Features of Plasma Grown Native Oxides on Indium Phosphide

1992 ◽  
Vol 284 ◽  
Author(s):  
E. D. Belyakova ◽  
S. V. Belyakov ◽  
L. S. Berman ◽  
A. T. Gorelenok ◽  
I. N. Karimov ◽  
...  
Keyword(s):  
Indium Phosphide ◽  
Charge Density ◽  
Strong Dependence ◽  
Native Oxide ◽  
Rf Plasma ◽  
Plasma Oxidation ◽  
Oxide Charge ◽  
Native Oxides ◽  
Effective Oxide Charge ◽  
Mis Structures

ABSTRACTEllipsometry and XPS investigations of RF plasma grown native oxide and C-V measurements of its interface were performed.Strong dependence of the composition of the plasma grown native oxides and electric properties of MIS structures on the time of plasma treatment has been observed. The greater the content of stable polyphosphate phase of [InxPyOz] is in the native oxide composition, the better parameters of its interface with InP (NS 11 cm−2 eV−1 and the hysteresis of C-V characteristics≤0.2 V) and the lesser C-V drift after treatment may be achieved. Plasma oxidation results in creating a negative effective oxide charge density.

Influence of Hydrogen Plasma Treatment Upon Native Oxides Plasma Grown on INP

1992 ◽  
Vol 284 ◽  
Author(s):  
E. D. Belyakova ◽  
S. V. Belyakov ◽  
L. S. Berman ◽  
A. T. Gorelenok ◽  
I. N. Karimov ◽  
...  
Keyword(s):  
Plasma Treatment ◽  
Negative Charge ◽  
Hydrogen Plasma ◽  
Flat Band ◽  
Band Shift ◽  
Native Oxides ◽  
Effective Oxide Charge ◽  
Reduced Density ◽  
Density Of Interface States ◽  
Mis Structures

Investigations of plasma grown native oxides on indium phosphide carried out recently [1,2] have shown that these oxides exhibit properties which are promising to be used in MIS structures on InP, due to their stable composition which includes [InxPyOz]n polyphosphate phase mainly and due to reduced density of interface states (Nss<1011 eV−1 cm−2). It has been shown also that MIS structures with plasma native oxides exhibit C-V characteristics shifted towards positive values of voltage bias. The flat band shift is assigned to a negative charge injected into oxide film during plasma oxidation. The presence of this negative charge in plasma grown native oxides on InP may cause instability of electric properties of MIS structures [2].The aim of this work was to make an attempt to influence upon negative effective oxide charge density by means of hydrogen plasma treatment.

Chemical Structures of Native Oxides Formed During Wet Chemical Treatments on NH4F Treated Si(111) Surfaces

1992 ◽  
Vol 259 ◽  
Author(s):  
Takeo Hattori ◽  
Hiroki Ogawa
Keyword(s):  
Photoelectron Spectroscopy ◽  
Attenuated Total Reflection ◽  
Native Oxide ◽  
X Ray ◽  
Chemical Treatments ◽  
Chemical Structures ◽  
Native Oxides ◽  
Ft Ir ◽  
Wet Chemical ◽  
Silicon Interface

ABSTRACTChemical structures of native oxides formed during wet chemical treatments on NH4F treated Si(111) surfaces were investigated using X-ray Photoelectron Spectroscopy (XPS) and Fourier Transformed Infrared Attenuated Total Reflection(FT-IR-ATR). It was found that the amounts of Si-H bonds in native oxides and those at native oxide/silicon interface are negligibly small in the case of native oxides formed in H2SO4-H2O2-H2O solution. Based on this discovery, it was confirmed that native oxides can be characterized by the amount of Si-H bonds in native oxides. Furthermore, it was found that the combination of various wet chemical treatments with the treatment in NH4OH-H2O2-H2O solution results in the drastic decrease in the amount of Si-H bonds in native oxides.

Controlled surface modification of Ti–40Nb implant alloy by electrochemically assisted inductively coupled RF plasma oxidation

2013 ◽  
Vol 9 (11) ◽  
pp. 9201-9210 ◽  
Author(s):  
Markus Göttlicher ◽  
Marcus Rohnke ◽  
Arne Helth ◽  
Thomas Leichtweiß ◽  
Thomas Gemming ◽  
...  
Keyword(s):  
Surface Modification ◽  
Rf Plasma ◽  
Plasma Oxidation ◽  
Inductively Coupled

Performance of Co/Al2O3/NiFe magnetic tunnel junctions prepared by a two-step rf plasma oxidation method

2001 ◽  
Vol 79 (8) ◽  
pp. 1160-1162 ◽  
Author(s):  
K. S. Yoon ◽  
J. H. Park ◽  
J. H. Choi ◽  
J. Y. Yang ◽  
C. H. Lee ◽  
...  
Keyword(s):  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions ◽  
Rf Plasma ◽  
Plasma Oxidation ◽  
Oxidation Method

Optimization of 4H-SiC MOS Properties with Cesium Implantation

2008 ◽  
Vol 600-603 ◽  
pp. 751-754 ◽  
Author(s):  
Y. Wang ◽  
T. Khan ◽  
T. Paul Chow
Keyword(s):  
Low Frequency ◽  
Conduction Band Edge ◽  
Electrical Characteristics ◽  
Mos Capacitors ◽  
Oxide Charge ◽  
Charge Densities ◽  
Effective Oxide Charge ◽  
Flatband Voltage ◽  
State Densities ◽  
Interfacial State

The effect of incorporation of cesium with implantation on the electrical characteristics of SiO2/4H-SiC interface has been evaluated using MOS capacitors. With a cesium dosage of 1012 and 3x1012 cm-2 on deposited oxide re-oxidized in steam, effective oxide charge densities of - 1.4x1012 and -7.5x1011 cm-2 respectively were extracted and a cesium implant activation percentage of 33% was estimated from flatband voltage shift. Also, corresponding interfacial state densities of 2.5x1013 and 1.8x1013 cm-2-eV-1 near the conduction band edge were extracted from High-Low frequency C-V technique, showing a decreasing Dit with increasing Cs dosage.

Polysilicon Emitter Transistors Manufactured using a Novel Limited Reaction Processing System

1989 ◽  
Vol 146 ◽  
Author(s):  
Fred Ruddell ◽  
Colin Parkes ◽  
B Mervyn Armstrong ◽  
Harold S Gamble
Keyword(s):  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Processing System ◽  
Bipolar Transistors ◽  
Native Oxide ◽  
Plasma Oxidation ◽  
Oxide Removal ◽  
Polysilicon Emitter ◽  
Reaction Processing

ABSTRACTThis paper describes a LPCVD reactor which was developed for multiple sequential in-situ processing. The system is capable of rapid thermal processing in the presence of plasma stimulation and has been used for native oxide removal, plasma oxidation and silicon deposition. Polysilicon layers produced by the system are incorporated into N-P-N polysilicon emitter bipolar transistors. These devices fabricated using a sequential in-situ plasma clean-polysilicon deposition schedule exhibited uniform gains limited to that of long single crystal emitters. Devices with either plasma grown or native oxide layers below the polysilicon exhibited much higher gains. The suitability of the system for sequential and limited reaction processing has been established.

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