scholarly journals Controlling the interface charge density in GaN-based metal-oxide-semiconductor heterostructures by plasma oxidation of metal layers

2015 ◽  
Vol 117 (21) ◽  
pp. 214503 ◽  
Author(s):  
Herwig Hahn ◽  
Béla Pécz ◽  
András Kovács ◽  
Michael Heuken ◽  
Holger Kalisch ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Charge Density ◽  
Metal Oxide Semiconductor ◽  
Semiconductor Heterostructures ◽  
Oxide Semiconductor ◽  
Plasma Oxidation ◽  
Interface Charge ◽  
Metal Layers

On the methodology of calculating volume charge density in a MIFGMOS substrate using Poisson’s equation

2021 ◽  
Vol ahead-of-print (ahead-of-print) ◽  
Author(s):  
Francisco Javier Plascencia Jauregui ◽  
Agustín Santiago Medina Vazquez ◽  
Edwin Christian Becerra Alvarez ◽  
José Manuel Arce Zavala ◽  
Sandra Fabiola Flores Ruiz
Keyword(s):  
Metal Oxide ◽  
Charge Density ◽  
Metal Oxide Semiconductor ◽  
Floating Gate ◽  
Poisson’S Equation ◽  
Oxide Semiconductor ◽  
Volume Charge ◽  
Poisson's Equation ◽  
Content Type ◽  
Volume Charge Density

Purpose This study aims to present a mathematical method based on Poisson’s equation to calculate the voltage and volume charge density formed in the substrate under the floating gate area of a multiple-input floating-gate metal-oxide semiconductor metal-oxide semiconductor (MOS) transistor. Design/methodology/approach Based on this method, the authors calculate electric fields and electric potentials from the charges generated when voltages are applied to the control gates (CG). This technique allows us to consider cases when the floating gate has any trapped charge generated during the manufacturing process. Moreover, the authors introduce a mathematical function to describe the potential behavior through the substrate. From the resultant electric field, the authors compute the volume charge density at different depths. Findings The authors generate some three-dimensional graphics to show the volume charge density behavior, which allows us to predict regions in which the volume charge density tends to increase. This will be determined by the voltages on terminals, which reveal the relationship between CG and volume charge density and will allow us to analyze some superior-order phenomena. Originality/value The procedure presented here and based on coordinates has not been reported before, and it is an aid to generate a model of the device and to build simulation tools in an analog design environment.

scholarly journals Micron thick Gd2O3 films for GaN/AlGaN metal–oxide–semiconductor heterostructures

2015 ◽  
Vol 589 ◽  
pp. 194-198 ◽  
Author(s):  
Daniel A. Grave ◽  
Joshua A. Robinson ◽  
Douglas E. Wolfe
Keyword(s):  
Metal Oxide ◽  
Metal Oxide Semiconductor ◽  
Semiconductor Heterostructures ◽  
Oxide Semiconductor
Sign in / Sign up

Export Citation Format

Share Document