Plasma Immersion Ion Implantation for Impurity Gettering in Silicon

1989 ◽  
Vol 147 ◽  
Author(s):  
H. Wong ◽  
X. Y. Qian ◽  
D. Carl ◽  
N. W. Cheung ◽  
M. A. Lieberman ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Cyclotron Resonance ◽  
Electron Cyclotron Resonance ◽  
Rutherford Backscattering Spectrometry ◽  
Silicon Wafers ◽  
Ecr Plasma ◽  
Annealing Step ◽  
Plasma Immersion Ion Implantation ◽  
Metallic Impurities ◽  
Saturation Dose

AbstractWe have utilized plasma immersion ion implantation (PIII) to demonstrate effective gettering of metallic impurities in silicon wafers. Metallic impurities such as Ni, Cu or Au were intentionally diffused into Si as marker impurities. The Ar or Ne atoms were ionized in an electron cyclotron resonance (ECR) plasma chamber. The ions were accelerated by a negative voltage applied to the wafer and implanted into the wafer. The as-implanted saturation dose can be as high as 5×1016cm−2. After an annealing step at 1000°C for 1 hour in a N2 ambient, the retained doses and the amount of gettered impurities were measured with Rutherford backscattering spectrometry (RBS). With a retained Ar dose in 1015cm−2 range after annealing, the gettered Ni, Cu and Au were 3.0×1014cm−2, 3.0×1014cm−2 and 4.4×1013cm−2 respectively.

Shallow P+-N Junction Fabrication by Plasma Immersion Ion Implantation

1991 ◽  
Vol 223 ◽  
Author(s):  
C. A. Pico ◽  
X. Y. Qian ◽  
E. Jones ◽  
M. A. Lieberman ◽  
N. W. Cheung
Keyword(s):  
Ion Implantation ◽  
Ideality Factor ◽  
High Frequency ◽  
Cyclotron Resonance ◽  
High Field ◽  
Electron Cyclotron Resonance ◽  
Forward Bias ◽  
Electron Cyclotron ◽  
Significant Damage ◽  
Plasma Immersion Ion Implantation

ABSTRACTPlasma immersion ion implantation (PIII) has been applied to fabricate shallow p-n junction diodes and MOS test structures. BF3 ions created by an electron cyclotron resonance source were implanted into n-type Si(100) at an accelerating voltage of −2 kv. The implant doses ranged from 4 × 1014/cm2 to 4 × 1015/cm2. In some cases, the top layers of the Si(100) substrates were preamorphized by a 3 × 1015/cm2 to 1016/cm2 implant of SiF4 by PIII at −7.2 kV prior to the BF3 implant. The ideality factor exhibited in both non- and preamorphized samples during forward bias is 1.02 to 1.05. Reverse leakages were measured at 30 nA/cm2 at −5V. High frequency capacitance and high field breakdown measurements of the oxide test structures showed no significant damage to the oxide.

Hydrogen in Dielectric Film Formation From an Electron Cyclotron Resonance Plasma

1991 ◽  
Vol 235 ◽  
Author(s):  
J. C. Barbour ◽  
H. J. Stein
Keyword(s):  
Cyclotron Resonance ◽  
Electron Cyclotron Resonance ◽  
Ion Irradiation ◽  
Film Formation ◽  
Ion Beam ◽  
Electron Cyclotron ◽  
Elastic Recoil ◽  
Elastic Recoil Detection ◽  
Ecr Plasma ◽  
The Stability

ABSTRACTThe incorporation of hydrogen into silicon nitride films grown downstream from an electron cyclotron resonance (ECR) plasma decreased rapidly with increasing substrate temperature (100–600°C). Fourier transform infra-red (FTIR) spectroscopy showed that the hydrogen in the as-grown material was primarily bonded to nitrogen. However, an applied bias of -200 V caused an increase in the number of Si-H bonds relative to N-H bonds, as a result of increased ion-beam damage. In addition, ion irradiation of an as-grown film with 175 keV Ar+ at room temperature showed that H transferred from N-H bonds to Si-H bonds without a loss of H. Elastic recoil detection (ERD) and FTIR of thermally annealed films showed that the stability of H incorporated during deposition increased with deposition temperature, and that the N-H bond was more stable than the Si-H bond above 700°C. Deuterium plasma treatments, at 600°C, of annealed films caused isotopic substitution with a conservation of bonds. Therefore, hydrogen loss from annealed films is apparently accompanied by a reduction in dangling bonds.

Sign in / Sign up

Export Citation Format

Share Document