Properties of Ultrathin Amorphous Silicon Nitride Films on III V Semiconductors

1992 ◽  
Vol 284 ◽  
Author(s):  
L.J. Huang ◽  
R. W. M. Kwok ◽  
W. M. Lau ◽  
H. T. Tang ◽  
W. N. Lennard ◽  
...  
Keyword(s):  
Residual Stress ◽  
Silicon Nitride ◽  
Photoelectron Spectroscopy ◽  
Microwave Plasma ◽  
Chemical Vapour ◽  
Positron Annihilation Spectroscopy ◽  
Air Exposure ◽  
Near Surface ◽  
Oxygen Penetration ◽  
Silicon Nitride Films

ABSTRACTProperties of ultrathin (— lOnm) silicon nitride films on single crystal Si, InP and GaAs have been studied using Raman spectroscopy, medium energy ion scattering (MEIS), variable-energy positron annihilation spectroscopy and x-ray photoelectron spectroscopy (XPS). The silicon nitride films were prepared by remote microwave plasma chemical vapour deposition (RPCVD). The results showed that oxidation of the film due to air exposure was restricted to the near surface with an oxygen penetration depth no greater than 2 nm. The residual stress in the as-grown films was substrate-dependent. For films on Si (100), the film induced residual stress was compressive with a value of 0.5GPa. Annealing at 500°C for 60 minutes resulted in a complete release of the residual stress. Vacuum annealing at a temperature below 500° C also led to changes of the electrical properties in the films but not the substrate.

XRD Studies on Residual Stress of the Diamond Films Grown Using Hot Filament Chemical Vapour Deposition Technique on Silicon Nitride and Tungsten Carbide Substrates

2013 ◽  
Vol 686 ◽  
pp. 325-330 ◽  
Author(s):  
Esah Hamzah ◽  
Tze Mi Yong ◽  
Kevin Chee Mun Fai
Keyword(s):  
Residual Stress ◽  
Silicon Nitride ◽  
Tungsten Carbide ◽  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Diamond Films ◽  
Chemical Vapour ◽  
Deposition Technique ◽  
Chemical Vapour Deposition Technique ◽  
Hot Filament

This study analyses residual stress measurement using X-Ray diffraction method on ultrafine-polycrystalline diamonds and polycrystalline diamonds films grown using Hot Filament Chemical Vapour Deposition technique (HFCVD) on silicon nitride(Si3N4) and tungsten carbide (WC) substrates in the same chamber at the same time with varied pretreatments prior to HFCVD diamond deposition. Measurements were taken perpendicular to the surface and the measured residual stress states of the diamond films are in compression. Thus, assuming isotropic properties of the film, the diamond films grown have tension residual stress parallel to the surface of the substrate. Residual stress is estimated to have the lowest stress for substrate that has undergone 5g/liter silicon carbide seeding process. Effects of residual stress to adhesion are discussed for both substrates.

Microbridge Testing of Silicon Oxide/Silicon Nitride Bilayer Films

2000 ◽  
Vol 657 ◽  
Author(s):  
C.-F. Qian ◽  
Y.-J. Su ◽  
M.-H. Zhao ◽  
T.-Y. Zhang
Keyword(s):  
Residual Stress ◽  
Silicon Nitride ◽  
Young’S Modulus ◽  
Silicon Oxide ◽  
Young's Modulus ◽  
Single Layer ◽  
Bilayer Films ◽  
Silicon Nitride Films ◽  
Small Deflection ◽  
Equivalent Bending Stiffness

ABSTRACTThe present work further develops the microbridge testing method to characterize mechanical properties of bilayer thin films. A closed-form formula for deflection versus load under small deflection is derived with consideration of the substrate deformation and residual stress in each layer. The analysis shows that the solution for bending a bilayer beam is equivalent to that for bending a single-layer beam with an equivalent bending stiffness, an equivalent residual force and a residual moment. One can estimate the Young's modulus and residual stress in a layer if the corresponding values in the other layer are known. The analytic results are confirmed by finite element calculations. The microbridge tests are conducted on low-temperature-silicon oxide (LTO)/silicon nitride bilayer films as well as on silicon nitride single-layer films. All microbridge specimens are prepared by the microfabricating technique. The tests on the single-layer films provide the material properties of the silicon nitride films. Then, applying the proposed method for bilayer films under small deflection yields the Young's modulus of 37 GPa and the residual stress of -148 MPa for LTO films.

A Comparison of the Surface Properties of DLC and Nanocrystalline Diamond

2007 ◽  
Vol 336-338 ◽  
pp. 1776-1779
Author(s):  
Chong Mu Lee ◽  
Kyung Ha Kim
Keyword(s):  
Chemical Vapour Deposition ◽  
Amorphous Carbon ◽  
Photoelectron Spectroscopy ◽  
Vapour Deposition ◽  
Microwave Plasma ◽  
Diamond Films ◽  
Chemical Vapour ◽  
Scanning Force Microscopy ◽  
Nanocrystalline Diamond ◽  
Hard Coatings

Diamond-like carbon (DLC) films have been deposited by radio frequency plasma enhanced chemical vapour deposition (rf-PECVD) with different Ar-CH4 mixtures. Nanocrystalline diamond films have been deposited by microwave plasma-enhanced chemical vapour deposition (MPCVD), using Ar-H2-CH4 mixtures. X-ray photoelectron spectroscopy (XPS) and nanotribological investigation (by scanning force microscopy) have been used to compare the mechanical properties and structures of these films. Highly orientated and non-orientated microcrystalline diamond films and MPCVD-produced amorphous carbon have also been studied by way of comparison. The diamond films exhibit a linear relationship between roughness and the coefficient of friction. The DLC and amorphous carbon have higher friction coefficients than the best performing diamond film, but may more easily be deposited as smooth coating. Possible applications for these various carbon-based films include microelectromechanical components, for which smooth, hard coatings are required.

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