Thermal Properties of Thin Films

1992 ◽  
Vol 284 ◽  
Author(s):  
J. C. Lambropoulos ◽  
S.-S. Hwang
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Thermal Conductivity ◽  
Thermal Properties ◽  
Thermal Resistance ◽  
Interfacial Thermal Resistance ◽  
Bulk Solid ◽  
Ceramic Films ◽  
Film Substrate ◽  
Conductivity Of Thin Films

ABSTRACTWe summarize various measurements of the thermal conductivity of thin ceramic films which show that the thermal conductivity of thin films with thickness in the micron and sub-micron range may be up to two orders of magnitude lower than the thermal conductivityof the corresponding bulk solid. The reduction in the thin film effective thermal conductivity is attributed to the interfacial thermal resistance across the film/substrate interface.

Characterisation of high thermal conductivity thin-film substrate systems and their interface thermal resistance

2018 ◽  
Vol 334 ◽  
pp. 233-242 ◽  
Author(s):  
Alireza Moridi ◽  
Liangchi Zhang ◽  
Weidong Liu ◽  
Steven Duvall ◽  
Andrew Brawley ◽  
...  
Keyword(s):  
Thin Film ◽  
Thermal Conductivity ◽  
Thermal Resistance ◽  
High Thermal Conductivity ◽  
Interface Thermal Resistance ◽  
Film Substrate

CuO thin films thermal conductivity and interfacial thermal resistance estimation

2006 ◽  
Vol 35 (1) ◽  
pp. 17-27 ◽  
Author(s):  
A. Kusiak ◽  
J.-L. Battaglia ◽  
S. Gomez ◽  
J.-P. Manaud ◽  
Y. Lepetitcorps
Keyword(s):  
Thin Films ◽  
Thermal Conductivity ◽  
Thermal Resistance ◽  
Interfacial Thermal Resistance

A Rapid Method to Measure Thermal Conductivity of Dielectric Thin Films: Thermal Resistance Method

2005 ◽  
Author(s):  
Da-Jeng Yao ◽  
Heng-Chieh Chien ◽  
Ming-Hsi Tseng
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Thermal Conductivity ◽  
Thermal Resistance ◽  
Dielectric Film ◽  
Electrical Heating ◽  
New Technique ◽  
Simple Method ◽  
Dielectric Thin Films ◽  
Resistance Method

A new and relatively simple method, described for thermal conductivity measurement of dielectric thin films, is presented in this paper. This new technique, the thermal resistance method, can be applied to determine cross-plane thermal conductivity of thin film by electrical heating and sensing techniques without traditional free standing structure design. A slender metal line, deposited on top of dielectric film, is used to measure and extract thermal resistance (Rc) of composite structure, including substrate and dielectric film. A 2-D analytical solution is derived to get thermal resistance (Rs) of substrate. Therefore, the thermal resistance of thin film (Rf) is calculated by subtracting Rs form Rc and thermal conductivity of thin film can also be extracted from thermal resistance. The measurement data of silicon dioxide with difference thickness are verified by using previous scientific literatures. In addition, the measuring results also show good agreement with those measured by 3 omega method. According to advantages of rather rapid and accuracy, this new technique has potential to develop to be an in-line test key for MEMS and IC relative industries.

Phonon Wave Heat Conduction in Thin Films and Superlattices

1999 ◽  
Vol 121 (4) ◽  
pp. 945-953 ◽  
Author(s):  
G. Chen
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Thermal Conductivity ◽  
Heat Conduction ◽  
Ray Tracing ◽  
Thermal Conductance ◽  
Single Layer ◽  
Ray Tracing Method ◽  
Conductivity Of Thin Films ◽  
Tracing Method

Heat conduction in thin films and superlattices is important for many engineering applications such as thin-film based microelectronic, photonic, thermoelectric, and thermionic devices. Past modeling efforts on the thermal conductivity of thin films were based on solving the Boltzmann transport equation that treats phonons as particles. The effects of phonon interference and tunneling on the heat conduction and the thermal conductivity of thin films and superlattices remain to be explored. In this work, the wave effects on the heat conduction in thin films and superlattices are studied based on the consideration of the acoustic wave propagation in thin film structures and neglecting the internal scattering. A transfer matrix method is used to calculate the phonon transmission and heat conduction through these structures. The effects considered in this work include the phonon interference, tunneling, and confinement. The phonon dispersion is considered by introducing frequency-dependent Lamb constants. A ray-tracing method that treats phonons as particles is also developed for comparison. Sample calculations are performed on double heterojunction structures resembling Ge/Si/Ge and n-period superlattices similar to Ge/Si/n(Si/Ge)/Ge, It is found that phonon confinements caused by the phonon spectra mismatch and by the total internal reflection create a dramatic decrease of the overall thermal conductance of thin films. The phonon interference in a single layer does not have a strong effect on its thermal conductance but for superlattice structures, the stop bands created by the interference effects can further reduce the thermal conductance. Tunneling of phonon waves occurs when the constituent layers are 1–3 monolayer thick and causes a slight recovery in the thermal conductance when compared to thicker layers. The thermal conductance obtained from the ray tracing and the wave methods approaches the same results for a single layer. For superlattices, however, the wave method leads to a finite thermal conductance even for infinitely thick superlattices while the ray tracing method gives a thermal conductance that decreases with increasing number of layers. Implications of these results on explaining the recent thermal conductivity data of superlattices are explored.

Thermal Properties of Thin Film Uranium Oxides and Thorium Oxides

2019 ◽  
Author(s):  
Aaron Thorum ◽  
Logan Page ◽  
Troy Munro ◽  
David Allred ◽  
Zilong Hua ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Thermal Conductivity ◽  
Thermal Properties ◽  
Thermal Property ◽  
Power Plants ◽  
Oxygen Mixture ◽  
Electron Interaction ◽  
Thermal Waves ◽  
Characterization Methods

Abstract Uranium and thorium oxides have critical roles as fuels in existing nuclear power plants, as well as in proposed reactor concepts. The thermal conductivity of these materials determines their ability to transfer heat from the reactor core to the surrounding coolant. Additionally, these actinide compounds are of interest in condensed matter physics because of the 5f orbitals and unique electron interaction, coupling, and scattering events that can occur. Because of the radioactivity of thorium and uranium, thin film measurements of actinide materials are used to limit the amount of operator exposure, but standard thermal characterization methods are not well suited for thin films. This paper presents the process of depositing thin film UOx and ThOx samples of nm-μm thicknesses and the results of thermal property measurements. Thin films were deposited on silicon and glass substrates via dc-magnetron sputtering using an argon/oxygen mixture as the working gas. The thermal properties of the films were measured by the Thermal Conductivity Microscope (TCM). This uses one laser to generate thermal waves and a second laser to measure the magnitude and phases of the thermal waves to obtain the conductivity of materials. The results of the research show that the UOx film properties are lower than bulk values and that the role of the substrate has a considerable effect on determining the measured properties. Future work aims at improving the deposition process. Epitaxial film growth is planned. Additional understanding of thermal property measurements is targeted.

Improvement of Thermal Conductivity of Electroplated Copper Interconnections by Controlling Their Crystallinity

2015 ◽  
Author(s):  
Masaru Gotoh ◽  
Ken Suzuki ◽  
Hideo Miura
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Thermal Conductivity ◽  
Thermal Properties ◽  
Grain Boundaries ◽  
Joule Heating ◽  
Seed Layer ◽  
Lattice Mismatch ◽  
Copper Thin Film ◽  
Electroplated Copper

Electroplated copper thin films are indispensable for the interconnections in the advanced electronic products, such as TSV (trough silicon via) structures, fine bumps, and thin-film interconnections in various devices and interposers. However, it has been reported that both electrical and mechanical properties of the films vary drastically comparing with those of conventional bulk copper. The main reason for the variation can be attributed to the fluctuation of the crystallinity of grains and grain boundaries in the films. Porous or sparse grain boundaries cause the increase in electrical resistivity and the embrittlement of the films. Thus, the thermal conductivity of the electroplated copper thin films should be varied drastically depending on their micro texture based on Wiedemann-Franz law. Since copper interconnections are used for not only electrical conductor but also thermal heat conductor, it is important to clarify the relationship between the crystallinity and thermal properties of the films. In this study, the local distributions of the crystallinity and physical properties were investigated experimentally. As the result of the temperature distribution due to local Joule heating along an interconnection, it was suggested that the variation in the quality of the grain boundaries in the electroplated copper thin-films caused the non-uniformity of the resistivity and thus, Joule heating in the thin films. In this study, the effect of the seed layer material on the thermal properties of the electroplated copper thin film was investigated. When a Ru seed layer was deposited as a buffer layer between the electroplated copper thin film and the Ta diffusion barrier layer, both the crystallinity and uniformity of grain boundaries in the electroplated copper films were improved since lattice mismatch between copper and the seed layer metal was decreased. The improvement of the crystallinity increased the long-term reliability of the interconnections under the loads of electromigration and stress-induced migration.

Measurement of Thermal Conductivity and Interface Thermal Resistance of Multilayered Thin-Films Using Variable Pulse-Width Transient Thermoreflectance

2012 ◽  
Author(s):  
Mihai G. Burzo
Keyword(s):  
Thin Films ◽  
Thermal Conductivity ◽  
Thermal Resistance ◽  
A Priori ◽  
Unknown Parameters ◽  
Non Invasive ◽  
Interface Thermal Resistance ◽  
Microelectronics Industry ◽  
Measurement Uncertainties ◽  
Conductivity Of Thin Films

This work discusses the use of a non-contact, non-invasive and in-situ measurement approach for determining the thermal conductivity of thin films used in the microelectronics industry, along with the interface thermal resistance between the films. The approach is based on the thermoreflectance method, where the change in the surface temperature is measured by detecting the change in the reflectivity of the sample. The results presented in this paper show that by using different pulse-widths for the heating laser, as well as a variable wavelength for the probing laser, the proposed method enables the measurement of several unknown parameters in a multi layered sample, which is representative of modern devices developed by the microelectronics industry. In addition, it is shown that the method can be further improved to minimize the measurement uncertainties by estimating a-priori the optimum thickness of the metal absorption layer that needs to be used. A property called responsivity is described, and it is shown that maximizing its value is indeed producing the lowest measurement uncertainties. An objective of this work is to provide guidance to investigators building similar systems and help others improve existing systems.

Cross-plane thermal conductivity of thin films characterized by Flash DSC measurement

2019 ◽  
Vol 677 ◽  
pp. 21-25 ◽  
Author(s):  
Yucheng He ◽  
Xiaoheng Li ◽  
Ling Ge ◽  
Qinyun Qian ◽  
Wenbing Hu
Keyword(s):  
Thin Films ◽  
Thermal Conductivity ◽  
Conductivity Of Thin Films
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