A Rapid Method to Measure Thermal Conductivity of Dielectric Thin Films: Thermal Resistance Method

2005 ◽  
Author(s):  
Da-Jeng Yao ◽  
Heng-Chieh Chien ◽  
Ming-Hsi Tseng
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Thermal Conductivity ◽  
Thermal Resistance ◽  
Dielectric Film ◽  
Electrical Heating ◽  
New Technique ◽  
Simple Method ◽  
Dielectric Thin Films ◽  
Resistance Method

A new and relatively simple method, described for thermal conductivity measurement of dielectric thin films, is presented in this paper. This new technique, the thermal resistance method, can be applied to determine cross-plane thermal conductivity of thin film by electrical heating and sensing techniques without traditional free standing structure design. A slender metal line, deposited on top of dielectric film, is used to measure and extract thermal resistance (Rc) of composite structure, including substrate and dielectric film. A 2-D analytical solution is derived to get thermal resistance (Rs) of substrate. Therefore, the thermal resistance of thin film (Rf) is calculated by subtracting Rs form Rc and thermal conductivity of thin film can also be extracted from thermal resistance. The measurement data of silicon dioxide with difference thickness are verified by using previous scientific literatures. In addition, the measuring results also show good agreement with those measured by 3 omega method. According to advantages of rather rapid and accuracy, this new technique has potential to develop to be an in-line test key for MEMS and IC relative industries.

Experimental Researches on Thermal Properties of Dielectric Thin Films With Weak Mechanical Intensity

2009 ◽  
Author(s):  
Hongxia Gao ◽  
Jianzu Yu ◽  
Lei Yu
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Thermal Conductivity ◽  
Thermophysical Properties ◽  
Film Structure ◽  
Mems Devices ◽  
Free Standing ◽  
Dielectric Thin Films ◽  
Bulk Specimen ◽  
Measured Specific Heat

Thermophysical properties of dielectric thin films are essential for researching on the thermal performance of microelectronic, optoelectronic and MEMS devices as well as for their reliability. The Joule-heating experimental method of the double-layer free-standing thin-film structure is used to determine the thermophysical properties of SiO2 and Al2O3 thin films by experiment. The thin films are deposited on the SiNx thin film by PECVD and EBE respectively. The results show that the thermal conductivity of both thin films have the obvious size effect. The value is merely a fraction of the one reported for each bulk specimen, and is coincident with the calculated Minimum Thermal Conductivity (MTC). The measured specific heat capacities are almost the same as those of the corresponding bulk. The steady state heat flow of SiO2/SiNx and Al2O3/SiNx membranes in the measurement is analyzed. The thermal radiation of the thin films always takes a large portion of total heat rejection. Therefore it can not be ignored as many macroscale thermal measurements always do.

Thermal Properties of Thin Films

1992 ◽  
Vol 284 ◽  
Author(s):  
J. C. Lambropoulos ◽  
S.-S. Hwang
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Thermal Conductivity ◽  
Thermal Properties ◽  
Thermal Resistance ◽  
Interfacial Thermal Resistance ◽  
Bulk Solid ◽  
Ceramic Films ◽  
Film Substrate ◽  
Conductivity Of Thin Films

ABSTRACTWe summarize various measurements of the thermal conductivity of thin ceramic films which show that the thermal conductivity of thin films with thickness in the micron and sub-micron range may be up to two orders of magnitude lower than the thermal conductivityof the corresponding bulk solid. The reduction in the thin film effective thermal conductivity is attributed to the interfacial thermal resistance across the film/substrate interface.

Temperature Dependence of Thermal Conductivity for Silicon Dioxide

2008 ◽  
Author(s):  
Da-Jeng Yao ◽  
Wei-Chih Lai ◽  
Heng-Chieh Chien
Keyword(s):  
Thin Films ◽  
Thermal Conductivity ◽  
Thermal Oxidation ◽  
Chemical Vapor ◽  
Mean Free Path ◽  
Simple Method ◽  
Dielectric Thin Films ◽  
3Ω Method ◽  
Sio2 Films ◽  
Apparent Thermal Conductivity

Heat transport of dielectric thin films in 30–300 nm thick is characterized in the temperature range of 74–300 K using the 3ω method, which is a simple method to measure the cross-plane thermal conductivity of dielectric thin films. Dielectric film samples of two kinds, deposited on Si substrates using plasma enhanced chemical vapor deposition (PECVD) and grown by thermal oxidation, were measured. In order to broaden the application of 3ω method, 3ω method system was combined with cryogenics system to measure temperature dependent material property. SiO2 films, prepared by thermal oxidation and PECVD, have been put and measured in the cryogenics system. The apparent thermal conductivity, intrinsic thermal conductivity, and interface resistance have been analyzed in different temperature. For this experiment, we discovered the thermal conductivity of PECVD SiO2 films is smaller than the thermal conductivity of SiO2 grown by thermal oxidation, because the porosity of thermal SiO2 is smaller than PECVD SiO2. The apparent thermal conductivity of SiO2 film decreases with film thickness. The thickness dependent thermal conductivity is interpreted in terms of a small interface thermal resistance RI. For SiO2 films, the thermal conductivity decreases if the temperature decreases, because the mean free path of heater carriers increases.

Finite-Element Modeling and Quantitative Measurement Using Scanning Microwave Microscopy to Characterize Dielectric Films

2018 ◽  
Author(s):  
K. A. Rubin ◽  
W. Jolley ◽  
Y. Yang
Keyword(s):  
Thin Films ◽  
Dielectric Film ◽  
Dielectric Constants ◽  
Dielectric Films ◽  
Silicon Substrates ◽  
Fem Modeling ◽  
Dielectric Thin Films ◽  
Microwave Microscopy ◽  
Scanning Microwave Microscopy ◽  
Low K

Abstract Scanning Microwave Impedance Microscopy (sMIM) can be used to characterize dielectric thin films and to quantitatively discern film thickness differences. FEM modeling of the sMIM response provides understanding of how to connect the measured sMIM signals to the underlying properties of the dielectric film and its substrate. Modeling shows that sMIM can be used to characterize a range of dielectric film thicknesses spanning both low-k and medium-k dielectric constants. A model system consisting of SiO2 thin films of various thickness on silicon substrates is used to illustrate the technique experimentally.

Determination of Thermal Conductivity of Amorphous Silicon Thin Films via Non-Contacting Optical Probing

2006 ◽  
Vol 326-328 ◽  
pp. 689-692
Author(s):  
Seung Jae Moon
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Thermal Conductivity ◽  
Amorphous Silicon ◽  
Optical Transmission ◽  
Film Deposition ◽  
Transmission Measurement ◽  
Conductive Heat ◽  
Optical Transmission Measurement

The thermal conductivity of amorphous silicon (a-Si) thin films is determined by using the non-intrusive, in-situ optical transmission measurement. The thermal conductivity of a-Si is a key parameter in understanding the mechanism of the recrystallization of polysilicon (p-Si) during the laser annealing process to fabricate the thin film transistors with uniform characteristics which are used as switches in the active matrix liquid crystal displays. Since it is well known that the physical properties are dependent on the process parameters of the thin film deposition process, the thermal conductivity should be measured. The temperature dependence of the film complex refractive index is determined by spectroscopic ellipsometry. A nanosecond KrF excimer laser at the wavelength of 248 nm is used to raise the temperature of the thin films without melting of the thin film. In-situ transmission signal is obtained during the heating process. The acquired transmission signal is fitted with predictions obtained by coupling conductive heat transfer with multi-layer thin film optics in the optical transmission measurement.

Improvement of Thermal Conductivity of Electroplated Copper Thin-Film Interconnections by Controlling Their Micro Texture

2014 ◽  
Author(s):  
Pornvitoo Rittinon ◽  
Ken Suzuki ◽  
Hideo Miura
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Thermal Conductivity ◽  
Grain Boundaries ◽  
Diffraction Method ◽  
Electron Back Scatter Diffraction ◽  
High Resistivity ◽  
Copper Thin Film ◽  
Electroplated Copper ◽  
The Relationship

Copper thin films are indispensable for the interconnections in the advanced electronic products, such as TSV (Trough Silicon Via), fine bumps, and thin-film interconnections in various devices and interposers. However, it has been reported that both electrical and mechanical properties of the films vary drastically comparing with those of conventional bulk copper. The main reason for the variation can be attributed to the fluctuation of the crystallinity of grain boundaries in the films. Porous or sparse grain boundaries show very high resistivity and brittle fracture characteristic in the films. Thus, the thermal conductivity of the electroplated copper thin films should be varied drastically depending on their micro texture based on the Wiedemann-Franz’s law. Since the copper interconnections are used not only for the electrical conduction but also for the thermal conduction, it is very important to quantitatively evaluate the crystallinity of the polycrystalline thin-film materials and clarify the relationship between the crystallinity and thermal properties of the films. The crystallinity of the interconnections were quantitatively evaluated using an electron back-scatter diffraction method. It was found that the porous grain boundaries which contain a significant amount of vacancies increase the local electrical resistance in the interconnections, and thus, cause the local high Joule heating. Such porous grain boundaries can be eliminated by control the crystallinity of the seed layer material on which the electroplated copper thin film is electroplated.

Mechanical deflection of cantilever microbeams: A new technique for testing the mechanical properties of thin films

1988 ◽  
Vol 3 (5) ◽  
pp. 931-942 ◽  
Author(s):  
T. P. Weihs ◽  
S. Hong ◽  
J. C. Bravman ◽  
W. D. Nix
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Mechanical Properties ◽  
Single Layer ◽  
Beam Theory ◽  
New Technique ◽  
Young’S Moduli ◽  
Silicon Micromachining ◽  
A New Technique

The mechanical deflection of cantilever microbeams is presented as a new technique for testing the mechanical properties of thin films. Single-layer microbeams of Au and SiO2 have been fabricated using conventional silicon micromachining techniques. Typical thickness, width, and length dimensions of the beams are 1.0,20, and 30 μm, respectively. The beams are mechanically deflected by a Nanoindenter, a submicron indentation instrument that continuously monitors load and deflection. Using simple beam theory and the load-deflection data, the Young's moduli and the yield strengths of thin-film materials that comprise the beams are determined. The measured mechanical properties are compared to those obtained by indenting similar thin films supported by their substrate.

Thermochromic VO2 Thin Film Prepared by Post Annealing Treatment of V2O5 Thin Film

2009 ◽  
Vol 79-82 ◽  
pp. 747-750 ◽  
Author(s):  
Dong Qing Liu ◽  
Wen Wei Zheng ◽  
Hai Feng Cheng ◽  
Hai Tao Liu
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Phase Transition ◽  
Photoelectron Spectroscopy ◽  
Sol Gel ◽  
Annealing Treatment ◽  
Simple Method ◽  
X Ray ◽  
Post Annealing ◽  
Vo2 Thin Films

Thermochromic vanadium dioxide (VO2) exhibits a semi-conducting to metallic phase transition at about 68°C, involving strong variations in electrical and optical properties. A simple method was proposed to prepare VO2 thin films from easily gained V2O5 thin films. The detailed thermodynamic calculation was done and the results show that V2O5 will decompose to VO2 when the post annealing temperature reaches 550°C at the atmospheric pressure of less than 0.06Pa. The initial V2O5 films were prepared by sol-gel method on fused-quartz substrates. Different post annealing conditions were studied. The derived VO2 thin film samples were characterized using X-ray diffraction and X-ray photoelectron spectroscopy. The electrical resistance and infrared emissivity of VO2 thin films under different temperatures were measured. The results show that the VO2 thin film derived from the V2O5 thin film annealed at 550°C for 10 hours is pure dioxide of vanadium without other valences. It was observed that the resistance of VO2 thin film with thickness about 600nm can change by 4 orders of magnitude and the 7.5-14μm emissivity can change by 0.6 during the phase transition.

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