Phonon Wave Heat Conduction in Thin Films and Superlattices

1999 ◽  
Vol 121 (4) ◽  
pp. 945-953 ◽  
Author(s):  
G. Chen

Heat conduction in thin films and superlattices is important for many engineering applications such as thin-film based microelectronic, photonic, thermoelectric, and thermionic devices. Past modeling efforts on the thermal conductivity of thin films were based on solving the Boltzmann transport equation that treats phonons as particles. The effects of phonon interference and tunneling on the heat conduction and the thermal conductivity of thin films and superlattices remain to be explored. In this work, the wave effects on the heat conduction in thin films and superlattices are studied based on the consideration of the acoustic wave propagation in thin film structures and neglecting the internal scattering. A transfer matrix method is used to calculate the phonon transmission and heat conduction through these structures. The effects considered in this work include the phonon interference, tunneling, and confinement. The phonon dispersion is considered by introducing frequency-dependent Lamb constants. A ray-tracing method that treats phonons as particles is also developed for comparison. Sample calculations are performed on double heterojunction structures resembling Ge/Si/Ge and n-period superlattices similar to Ge/Si/n(Si/Ge)/Ge, It is found that phonon confinements caused by the phonon spectra mismatch and by the total internal reflection create a dramatic decrease of the overall thermal conductance of thin films. The phonon interference in a single layer does not have a strong effect on its thermal conductance but for superlattice structures, the stop bands created by the interference effects can further reduce the thermal conductance. Tunneling of phonon waves occurs when the constituent layers are 1–3 monolayer thick and causes a slight recovery in the thermal conductance when compared to thicker layers. The thermal conductance obtained from the ray tracing and the wave methods approaches the same results for a single layer. For superlattices, however, the wave method leads to a finite thermal conductance even for infinitely thick superlattices while the ray tracing method gives a thermal conductance that decreases with increasing number of layers. Implications of these results on explaining the recent thermal conductivity data of superlattices are explored.

1992 ◽  
Vol 284 ◽  
Author(s):  
J. C. Lambropoulos ◽  
S.-S. Hwang

ABSTRACTWe summarize various measurements of the thermal conductivity of thin ceramic films which show that the thermal conductivity of thin films with thickness in the micron and sub-micron range may be up to two orders of magnitude lower than the thermal conductivityof the corresponding bulk solid. The reduction in the thin film effective thermal conductivity is attributed to the interfacial thermal resistance across the film/substrate interface.


Author(s):  
Jie Zhu ◽  
Dawei Tang ◽  
Wei Wang ◽  
Jun Liu ◽  
Ronggui Yang

The thermal conductivity of thin films and interface thermal conductance of dissimilar materials play a critical role in the functionality and the reliability of micro/nano-materials and devices. The transient thermoreflectance methods, including the time-domain thermoreflectance (TDTR) and the frequency-domain thermoreflectance (FDTR) techniques are excellent approaches for the challenging measurements of interface thermal conductance of dissimilar materials. A theoretical model is introduced to analyze the TDTR and FDTR signals in a tri-layer structure which consists of metal transducer, thin film, and substrate. Such a tri-layer structure represents typical sample geometry in the thermoreflectance measurements for the thermal conductivity and interface thermal conductance of thin films. The sensitivity of TDTR signals to the thermal conductivity of thin films is analyzed to show that the modulation frequency needs to be selected carefully for a high accuracy TDTR measurement. However, such a frequency selection is closely related to the unknown thermal properties and consequently hard to make before the measurement. Fortunately this limitation can be avoided in FDTR. Depending on the modulation frequency, the heat transport in such a tri-layer could be divided into three regimes based on the thickness of the film and the thermal penetration depth, the thermal conductivity of thin films and interface thermal conductance can be subsequently obtained by fitting different frequency regions of one FDTR measurement curve. FDTR measurements are then conducted along with the aforementioned analysis to obtain the thermal conductivity of SiO2 thin films and interface thermal conductance SiO2 and Si. FDTR measurement results agree well with the TDTR measurements, but promises to be a much easier implementation than TDTR measurements.


2000 ◽  
Vol 54 (3) ◽  
pp. 46-56
Author(s):  
K. Uchida ◽  
D. Da ◽  
C. K. Lee ◽  
T. Matsunaga ◽  
T. Imai ◽  
...  

2019 ◽  
Vol 677 ◽  
pp. 21-25 ◽  
Author(s):  
Yucheng He ◽  
Xiaoheng Li ◽  
Ling Ge ◽  
Qinyun Qian ◽  
Wenbing Hu

Energy ◽  
2021 ◽  
Vol 228 ◽  
pp. 120438
Author(s):  
Asher J. Hancock ◽  
Laura B. Fulton ◽  
Justin Ying ◽  
Corey E. Clifford ◽  
Shervin Sammak ◽  
...  

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