Deposition of Polycrystalline Silicon thin Films by Plasma Enhanced CVD

1992 ◽  
Vol 283 ◽  
Author(s):  
Russell E. Hollingsworth ◽  
Pawan K. Bhat
Keyword(s):  
High Frequency ◽  
Polycrystalline Silicon ◽  
Room Temperature ◽  
Chemical Vapor ◽  
Rf Plasma ◽  
Grain Sizes ◽  
Silicon Thin Films ◽  
Boron Doped ◽  
Capacitance Voltage ◽  
Polycrystalline Silicon Films

ABSTRACTPolycrystalline silicon films have been grown using high frequency (110 MHz) rf plasma enhanced chemical vapor deposition with a hydrogen diluted silane gas. Polycrystalline growth was obtained when the silane fraction was less than 10% of the total gas mixture for all rf powers, in marked contrast to growth at 13.56 MHz where high power and more dilution are typically required for microcrystalline growth. Grains with [111] and [220] orientations were observed to have grain sizes up to 900 Angstroms. Room temperature free carrier concentrations as low as 5 × 1015 cm-3 for undoped films were determined by capacitance voltage measurements. Boron doped microcrystalline films were grown with conductivity as high as 8 (Ωcm) V

In Situ Ellipsometric Monitoring of the Growth of Polycrystalline Silicon Thin Films by RF Plasma Chemical Vapor Deposition

1994 ◽  
Vol 33 (Part 1, No. 7B) ◽  
pp. 4191-4194 ◽  
Author(s):  
Kunihide Tachibana ◽  
Tatsuru Shirafuji ◽  
Yasuaki Hayashi ◽  
Shinji Maekawa ◽  
Tatsuo Morita
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Polycrystalline Silicon ◽  
Chemical Vapor ◽  
Rf Plasma ◽  
Plasma Chemical ◽  
Plasma Chemical Vapor Deposition ◽  
Silicon Thin Films

Mechanical Properties of Thermally Crystallized Boron-Doped Silicon Thin Films

1995 ◽  
Vol 403 ◽  
Author(s):  
P. Scafidi ◽  
J. Cali ◽  
E. Bustarret
Keyword(s):  
Elastic Modulus ◽  
Internal Stress ◽  
Polycrystalline Silicon ◽  
Boron Concentration ◽  
Hydrogenated Silicon ◽  
Silicon Thin Films ◽  
Boron Doped ◽  
Amorphous Hydrogenated Silicon ◽  
Polycrystalline Silicon Films ◽  
P Type

AbstractP-type polycrystalline silicon films on silicon wafers were obtained by annealing at 575 °C boron-doped amorphous hydrogenated silicon (a-Si:H) films. During the anneal, the internal stress of the film changed from compression to tension. The crystallization kinetics became faster when increasing the boron concentration. The hardness and elastic modulus of each film were determined by nanoindentation. The elastic modulus increased systematically upon crystallization. Wafer curvature monitoring during the thermal cycle allowed us to derive the thermal expansion coefficient of a-Si:H for different boron doping levels. Above a critical temperature of 320°C, the internal stress of the a-Si:H films rapidly changed toward a tensile state, independent of the boron concentration. Analysis of the hydrogen-bonding configurations by Fourier transform infrared spectroscopy indicated that this rapid stress change was due to hydrogen out-diffusion. The evolution of the internal stress with time was followed during the 575°C crystallization isothermal plateau. The circular blistering and spalling observed upon annealing in some cases of low doping levels was correlated with the presence of microvoids and with the internal stress of the a-Si:H film.

scholarly journals Synthesis of Boron-Doped Silicon Film Using Hot Wire Chemical Vapor Deposition Technique

Crystals ◽  
2020 ◽  
Vol 10 (4) ◽  
pp. 237
Author(s):  
M. Abul Hossion ◽  
B. M. Arora
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Polycrystalline Silicon ◽  
Silicon Film ◽  
Chemical Vapor ◽  
Hot Wire ◽  
Deposition Technique ◽  
Boron Doped ◽  
Vapor Deposition Technique ◽  
Polycrystalline Silicon Film

Boron-doped polycrystalline silicon film was synthesized using hot wire chemical vapor deposition technique for possible application in photonics devices. To investigate the effect of substrate, we considered Si/SiO2, glass/ITO/TiO2, Al2O3, and nickel tungsten alloy strip for the growth of polycrystalline silicon films. Scanning electron microscopy, optical reflectance, optical transmittance, X-ray diffraction, and I-V measurements were used to characterize the silicon films. The resistivity of the film was 1.3 × 10−2 Ω-cm for the polycrystalline silicon film, which was suitable for using as a window layer in a solar cell. These films have potential uses in making photodiode and photosensing devices.

Electrical properties of boron doped CVD diamond after plasma cleaning probed by capacitance-voltage profiling

2014 ◽  
Vol 1634 ◽  
Author(s):  
Luana S. Araujo ◽  
Olivia Berengue ◽  
Maurício Baldan ◽  
Neidenei Ferreira ◽  
João Moro ◽  
...  
Keyword(s):  
Plasma Treatment ◽  
Chemical Vapor ◽  
Diamond Surface ◽  
Plasma Cleaning ◽  
Electrical Characteristics ◽  
Capacitance Measurements ◽  
Boron Doped ◽  
Capacitance Voltage ◽  
Surface Adsorbates ◽  
P Type

ABSTRACTDoped diamond films grown by chemical vapor techniques has been used to study hydrogen and oxygen terminated diamond. It is known that the electrical characteristics of metal-diamond interface are strongly affected by the diamond surface features. O2 plasma treatment was used as a cleaning procedure for as grown diamond samples leading to changes in the capacitance measurements after treatment. The alteration in the characteristics of the samples can be attributed to the surface adsorbates like hydrogen and water vapor present in the atmosphere. The results indicates that the O2 plasma treatment was effective in cleaning the surface revealing the expected features of a p-type diamond film.

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