Summary Abstract: Comparative study of polycrystalline silicon thin films deposited by very low pressure chemical vapor deposition with and without plasma enhancement

1987 ◽  
Vol 5 (4) ◽  
pp. 1903-1904 ◽  
Author(s):  
J.‐J. J. Hajjar ◽  
R. Reif ◽  
D. Adler
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Comparative Study ◽  
Vapor Deposition ◽  
Polycrystalline Silicon ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Silicon Thin Films ◽  
Pressure Chemical ◽  
Plasma Enhancement

Hydrogenation of low-pressure chemical-vapor-deposition silicon thin films

1987 ◽  
Vol 36 (17) ◽  
pp. 9168-9170 ◽  
Author(s):  
P. X. Zhang ◽  
X. W. Wu ◽  
J. Yao ◽  
S. K. Wong ◽  
P. K. John ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Silicon Thin Films ◽  
Pressure Chemical

Ex situellipsometry characterization of excimer laser annealed amorphous silicon thin films grown by low pressure chemical vapor deposition

1997 ◽  
Vol 71 (3) ◽  
pp. 359-361 ◽  
Author(s):  
Chau-Hong Kuo ◽  
In-Cha Hsieh ◽  
Dieter K. Schroder ◽  
George N. Maracas ◽  
Sheau Chen ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Amorphous Silicon ◽  
Excimer Laser ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Silicon Thin Films ◽  
Pressure Chemical

A Novel Direct Liquid Injection Low Pressure Chemical Vapor Deposition System (DLI-LPCVD) for the Deposition of Thin Films

2017 ◽  
Vol 19 (8) ◽  
pp. 1700193 ◽  
Author(s):  
Mattias Vervaele ◽  
Bert De Roo ◽  
Jolien Debehets ◽  
Marilyne Sousa ◽  
Luman Zhang ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Liquid Injection ◽  
Pressure Chemical ◽  
Direct Liquid Injection

Silicon Recrystallization in Sipos Material Obtained by Disilane

1995 ◽  
Vol 403 ◽  
Author(s):  
J. J. Pedroviejo ◽  
B. Garrido ◽  
J. C. Ferrer ◽  
A. Cornet ◽  
E. Scheid ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Vapor Deposition ◽  
Polycrystalline Silicon ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Thermal Treatments ◽  
Structural Modifications ◽  
Pressure Chemical

AbstractConventional and Rapid Thermal Annealing of Semi-Insulating Polycrystalline Silicon layers obtained by Low Pressure Chemical Vapor Deposition (LPCVD) from disilane Si2H6 have been performed in order to determine the structural modifications induced on the layers by these thermal treatments. The study of these modifications has been carried out by several analysis methods like FTIR, XPS, TEM, RAMAN and ellipsometry. The results obtained are presented, contrasted and discussed in this work.

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