Highly Textured Microcrystalline Si-Thin film Fabricated by Layer-by-Layer Technique

1992 ◽  
Vol 283 ◽  
Author(s):  
Shun-Ichi Ishihara ◽  
Deyan He ◽  
Tetsuya Akasaka ◽  
Yuzoh Arak ◽  
Masami Nakata ◽  
...  
Keyword(s):  
Thin Film ◽  
Atomic Hydrogen ◽  
Marked Improvement ◽  
Layer By Layer ◽  
Ordered Structure ◽  
Microcrystalline Silicon ◽  
Layer Technique ◽  
Layer By Layer Technique ◽  
Si Thin Film

ABSTRACTMicrocrystalline silicon with high crystallinity was fabricated on a glass substrate at a rather low temperature (320 C) by alternately repeating the deposition of Si thin layer 10 nm thick from fluorinated precursors and the treatment with atomic hydrogen. Hydrogen content was reduced to 0.5 at% or less. According to the in situ ellipsometric observation, the sticking of precursors followed the reactions for the construction of the ordered structure with the aid of atomic hydrogen. In addition, the defects were passivated efficiently with the treatment down to 4×1016 spins/cm3. A marked improvement was simultaneously verified in the efficiency of the substitutional P-doping in the films fabricated by this layer-by-layer technique.

scholarly journals Stable microcrystalline silicon thin-film transistors produced by the layer-by-layer technique

1999 ◽  
Vol 86 (12) ◽  
pp. 7079-7082 ◽  
Author(s):  
P. Roca i Cabarrocas ◽  
R. Brenot ◽  
P. Bulkin ◽  
R. Vanderhaghen ◽  
B. Drévillon ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Layer By Layer ◽  
Microcrystalline Silicon ◽  
Silicon Thin Film ◽  
Layer Technique ◽  
Layer By Layer Technique

Structural Inhomogeneity of SrBi2Ta2O9Thin Films Prepared by Layer-by-Layer Technique

2001 ◽  
Vol 688 ◽  
Author(s):  
J. B. Xu ◽  
G. D. Hu ◽  
S. P. Wong
Keyword(s):  
Thin Film ◽  
Profile Analysis ◽  
Grazing Angle ◽  
Grazing Incidence ◽  
Annealing Process ◽  
Layer By Layer ◽  
Depth Profile Analysis ◽  
Structural Orientation ◽  
Layer Technique ◽  
Layer By Layer Technique

AbstractGrazing incidence x-ray diffraction has been employed to perform the depth-profile analysis on SrBi2Ta2O9 (SBT) thin films with different preferential orientations. For the polycrystalline SBT thin film, the change in structural orientation occurs only within the 15-nm-thick top layer, which is associated with the formation of the (200)-predominant SBT thin film prepared by the layer-by-layer annealing process. The inhomogeneity of structural orientation is more significant in the full film thickness for the (200)- predominant SBT thin film. (0010) peak can only be observed for the grazing angle larger than 0.6°. A layer with the highest ratio of I(200)/I(115) is found in the top surface layer (i.e., the latest layer during deposition) of the (200)-predominant SBT thin film.

Growth of nanocrystalline silicon thin film with layer-by-layer technique for fast photo-detecting applications

2006 ◽  
Vol 127 (2-3) ◽  
pp. 251-254 ◽  
Author(s):  
Chun-Yu Lin ◽  
Yean-Kuen Fang ◽  
Shih-Fang Chen ◽  
Ping-Chang Lin ◽  
Chun-Sheng Lin ◽  
...  
Keyword(s):  
Thin Film ◽  
Nanocrystalline Silicon ◽  
Layer By Layer ◽  
Silicon Thin Film ◽  
Layer Technique ◽  
Layer By Layer Technique

Preparation of Microcrystalline Silicon with the Layer-by-Layer Technique at Various Plasma Excitation Frequencies

1996 ◽  
Vol 452 ◽  
Author(s):  
P. Hapke ◽  
R. Carius ◽  
F. Finger ◽  
A. Lambertz ◽  
O. Vetterl ◽  
...  
Keyword(s):  
Phase Transformation ◽  
Excitation Frequency ◽  
Hydrogen Treatment ◽  
Layer By Layer ◽  
Microcrystalline Silicon ◽  
Nucleation Layer ◽  
Layer Technique ◽  
Plasma Excitation ◽  
Excitation Frequencies ◽  
Layer By Layer Technique

AbstractFor application as nucleation layer in thin film devices, microcrystalline silicon was deposited with the layer-by-layer technique using plasma excitation frequencies between 27 and 95 MHz, various hydrogen treatment times and various film thicknesses per layer. An optimum phase transformation is found at an intermediate plasma excitation frequency, i.e. at this frequency the shortest hydrogen annealing time is necessary for an effective amorphous-to-crystalline phase transformation.

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