scholarly journals Stable microcrystalline silicon thin-film transistors produced by the layer-by-layer technique

1999 ◽  
Vol 86 (12) ◽  
pp. 7079-7082 ◽  
Author(s):  
P. Roca i Cabarrocas ◽  
R. Brenot ◽  
P. Bulkin ◽  
R. Vanderhaghen ◽  
B. Drévillon ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Layer By Layer ◽  
Microcrystalline Silicon ◽  
Silicon Thin Film ◽  
Layer Technique ◽  
Layer By Layer Technique

Growth of nanocrystalline silicon thin film with layer-by-layer technique for fast photo-detecting applications

2006 ◽  
Vol 127 (2-3) ◽  
pp. 251-254 ◽  
Author(s):  
Chun-Yu Lin ◽  
Yean-Kuen Fang ◽  
Shih-Fang Chen ◽  
Ping-Chang Lin ◽  
Chun-Sheng Lin ◽  
...  
Keyword(s):  
Thin Film ◽  
Nanocrystalline Silicon ◽  
Layer By Layer ◽  
Silicon Thin Film ◽  
Layer Technique ◽  
Layer By Layer Technique

Highly Textured Microcrystalline Si-Thin film Fabricated by Layer-by-Layer Technique

1992 ◽  
Vol 283 ◽  
Author(s):  
Shun-Ichi Ishihara ◽  
Deyan He ◽  
Tetsuya Akasaka ◽  
Yuzoh Arak ◽  
Masami Nakata ◽  
...  
Keyword(s):  
Thin Film ◽  
Atomic Hydrogen ◽  
Marked Improvement ◽  
Layer By Layer ◽  
Ordered Structure ◽  
Microcrystalline Silicon ◽  
Layer Technique ◽  
Layer By Layer Technique ◽  
Si Thin Film

ABSTRACTMicrocrystalline silicon with high crystallinity was fabricated on a glass substrate at a rather low temperature (320 C) by alternately repeating the deposition of Si thin layer 10 nm thick from fluorinated precursors and the treatment with atomic hydrogen. Hydrogen content was reduced to 0.5 at% or less. According to the in situ ellipsometric observation, the sticking of precursors followed the reactions for the construction of the ordered structure with the aid of atomic hydrogen. In addition, the defects were passivated efficiently with the treatment down to 4×1016 spins/cm3. A marked improvement was simultaneously verified in the efficiency of the substitutional P-doping in the films fabricated by this layer-by-layer technique.

Influence of the deposition temperature on the performance of microcrystalline silicon thin film transistors

2008 ◽  
Vol 52 (3) ◽  
pp. 432-435 ◽  
Author(s):  
Maher Oudwan ◽  
Alexey Abramov ◽  
Pere Roca i Cabarrocas ◽  
François Templier
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Deposition Temperature ◽  
Microcrystalline Silicon ◽  
Silicon Thin Film

Low temperature processed p-type bottom gate microcrystalline silicon thin film transistors

2010 ◽  
pp. NA-NA
Author(s):  
O. Moustapha ◽  
A. Abramov ◽  
D. Daineka ◽  
M. Oudwan ◽  
Y. Bonnassieux ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Thin Film Transistors ◽  
Microcrystalline Silicon ◽  
Silicon Thin Film ◽  
P Type ◽  
Bottom Gate

scholarly journals Investigation on stability of microcrystalline silicon thin film transistors

2006 ◽  
Vol 55 (12) ◽  
pp. 6612
Author(s):  
Li Juan ◽  
Wu Chun-Ya ◽  
Zhao Shu-Yun ◽  
Liu Jian-Ping ◽  
Meng Zhi-Guo ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Microcrystalline Silicon ◽  
Silicon Thin Film

n+-doped-layer-free microcrystalline silicon thin film transistors fabricated with the CuMg as source/drain metal

2007 ◽  
Vol 91 (2) ◽  
pp. 022113 ◽  
Author(s):  
M. C. Wang ◽  
T. C. Chang ◽  
Po-Tsun Liu ◽  
R. W. Xiao ◽  
L. F. Lin ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Microcrystalline Silicon ◽  
Silicon Thin Film

Microcrystalline silicon and excimer laser crystallized silicon Thin Film Transistors on the same substratel

2007 ◽  
Vol 515 (19) ◽  
pp. 7585-7589 ◽  
Author(s):  
T. Pier ◽  
K. Kandoussi ◽  
C. Simon ◽  
N. Coulon ◽  
H. Lhermite ◽  
...  
Keyword(s):  
Thin Film ◽  
Excimer Laser ◽  
Thin Film Transistors ◽  
Microcrystalline Silicon ◽  
Silicon Thin Film
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