Fluorescence x-ray absorption fine structure study on local structures around Fe atoms heavily doped in GaN by low-temperature molecular-beam epitaxy

2001 ◽  
Vol 78 (17) ◽  
pp. 2470-2472 ◽  
Author(s):  
H. Ofuchi ◽  
M. Oshima ◽  
M. Tabuchi ◽  
Y. Takeda ◽  
H. Akinaga ◽  
...  
Keyword(s):  
Fine Structure ◽  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Molecular Beam ◽  
Structure Study ◽  
X Ray ◽  
Local Structures ◽  
Absorption Fine ◽  
Heavily Doped ◽  
X Ray Absorption

Extended X-ray Absorption Fine Structure Studies of GaN Epilayers Doped in situ with Er and Eu During Molecular Beam Epitaxy

2003 ◽  
Vol 798 ◽  
Author(s):  
V. Katchkanov ◽  
J. F. W. Mosselmans ◽  
S. Dalmasso ◽  
K. P. O'Donnell ◽  
R. W. Martin ◽  
...  
Keyword(s):  
Fine Structure ◽  
Rare Earth ◽  
Molecular Beam Epitaxy ◽  
Local Structure ◽  
Molecular Beam ◽  
X Ray ◽  
Absorption Fine ◽  
X Ray Absorption ◽  
The Eu

ABSTRACTThe local structure around Er and Eu atoms introduced into GaN epilayers was studied by means of Extended X-ray Absorption Fine Structure above the appropriate rare-earth X-ray absorption edge. The samples were doped in situ during growth by Molecular Beam Epitaxy. The formation of ErN clusters was found in samples with high average Er concentrations of 32±6% and 12.4±0.8%, estimated by Wavelength Dispersive X-ray analysis. When the average Er concentration is decreased to 6.0±0.2%, 1.6±0.2% and 0.17±0.02%, Er is found in localised clusters of ErGaN phase with high local Er content. Similar behaviour is observed for Eu-doped samples. For an average Eu concentration of 30.5±0.5% clusters of pure EuN occur. Decreasing the Eu concentration to 10.4±0.5% leads to EuGaN clusters with high local Eu content. However, for a sample with an Eu concentration of 14.2±0.5% clustering of Eu was not observed.

Fluorescence Extended X-Ray Absorption Fine Structure Study on Local Structures of Rare-Earth-Doped InGaGdN

2016 ◽  
Vol 1133 ◽  
pp. 429-433
Author(s):  
Siti Nooraya Mohd Tawil ◽  
Shuichi Emura ◽  
Daivasigamani Krishnamurthy ◽  
Hajime Asahi
Keyword(s):  
Fine Structure ◽  
Rare Earth ◽  
Nearest Neighbor ◽  
Structure Study ◽  
Edge Structure ◽  
X Ray ◽  
Local Structures ◽  
Absorption Fine ◽  
X Ray Absorption

Local structures around gadolinium atoms in rare-earth (RE)-doped InGaGdN thin films were studied by means of fluorescence extended X-ray absorption fine structure (EXAFS) measured at the Gd LIII-edges. The samples were doped with Gd in-situ during growth by plasma-assisted molecular beam epitaxy (PAMBE). Gd LIII-edge EXAFS signal from the GaGdN, GdN and Gd foil were also measured as reference. The X-ray absorption near edge structure (XANES) spectra around Gd LIII absorption edge of InGaGdN samples observed at room temperature indicated the enhancement of intensities with the increase of Gd composition. Further EXAFS analysis inferred that the Gd atoms in InGaN were surrounded by similar atomic shells as in the case of GaGdN with the evidence indicating majority of Gd atoms substituted into Ga sites of InGaGdN. A slight elongation of bond length for the 2nd nearest-neighbor (Gd–Ga) of sample with higher Gd concentration was also observed.

X-ray Absorption Fine Structure Study of the Local Structures of Activator Atoms in Gadolinium(3+) Oxy-Orthosilicate Single Crystal

2006 ◽  
Vol 45 (7) ◽  
pp. 5960-5965 ◽  
Author(s):  
Yasuhiro Yagi ◽  
Tatsuya Usui ◽  
Shigenori Shimizu ◽  
Kazuhisa Kurashige ◽  
Hiroyuki Ishibashi ◽  
...  
Keyword(s):  
Fine Structure ◽  
Single Crystal ◽  
Structure Study ◽  
X Ray ◽  
Local Structures ◽  
Absorption Fine ◽  
X Ray Absorption
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