Chemical Modification in Wear Tracks of Chemical Vapor-Deposited Diamond Surfaces Studied with X-ray Absorption Spectroscopy

2008 ◽  
Vol 32 (1) ◽  
pp. 31-34 ◽  
Author(s):  
L.-C. Duda ◽  
J. Andersson ◽  
T. Schmitt ◽  
S. Jacobson
Keyword(s):  
Chemical Modification ◽  
Absorption Spectroscopy ◽  
Chemical Vapor ◽  
Diamond Surfaces ◽  
X Ray ◽  
Chemical Vapor Deposited ◽  
X Ray Absorption

Structure of Chalcogen-Stabilized GaAs Interface

1992 ◽  
Vol 281 ◽  
Author(s):  
Shinichiro Takatani ◽  
Asao Nakano ◽  
Kiyoshi Ogata ◽  
Takeshi Kikawa ◽  
Masatoshi Nakazawa
Keyword(s):  
Fine Structure ◽  
Silicon Dioxide ◽  
Crystal Orientation ◽  
Molecular Beam ◽  
Chemical Vapor ◽  
Atomic Layer ◽  
Layer Model ◽  
X Ray ◽  
Chemical Vapor Deposited ◽  
X Ray Absorption

ABSTRACTA photo chemical vapor deposited silicon dioxide - gallium arsenide interface treated by a selenium(Se)-molecular beam is investigated using extended X-ray absorption fine structure (EXAFS) analysis. The Se K-edge EXAFS shows the presence of Ga2Se3-related compound at the SiO2/GaAs interface, indicating that the Ga2Se3 layer formed by the Se-treatment is preserved after the deposition of the SiO2film. The effective coordination number of the Se atoms is found to depend on the direction of the polarizing vector with respect to the crystal orientation. An attempt is made to interpret this dependence using a simple atomic layer model.

scholarly journals Synchrotron Radiation X-Ray Absorption Spectroscopy and Spectroscopic Ellipsometry Studies of InSb Thin Films on GaAs Grown by Metalorganic Chemical Vapor Deposition

2018 ◽  
Vol 2018 ◽  
pp. 1-11 ◽  
Author(s):  
Yingda Qian ◽  
Yuanlan Liang ◽  
Xuguang Luo ◽  
Kaiyan He ◽  
Wenhong Sun ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Synchrotron Radiation ◽  
Absorption Spectroscopy ◽  
Spectroscopic Ellipsometry ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
X Ray ◽  
X Ray Absorption ◽  
Metalorganic Chemical

A series of ultrathin InSb films grown on GaAs by low-pressure metalorganic chemical vapor deposition with different V/III ratios were investigated thoroughly using spectroscopic ellipsometry (SE), X-ray diffraction, and synchrotron radiation X-ray absorption spectroscopy. The results predicted that InSb films on GaAs grown under too high or too low V/III ratios are with poor quality, while those grown with proper V/III ratios of 4.20–4.78 possess the high crystalline quality. The temperature-dependent SE (20–300°C) and simulation showed smooth variations of SE spectra, optical constants (n, k, e1, and ε2), and critical energy points (E1, E1+Δ1, E′0, E2, and E′1) for InSb film when temperature increased from 20°C to 250°C, while at 300°C, large changes appeared. Our study revealed the oxidation of about two atomic layers and the formation of an indium-oxide (InO) layer of ∼5.4 nm. This indicates the high temperature limitation for the use of InSb/GaAs materials, up to 250°C.

In Situ X-ray Absorption Spectroscopy in the Soft Energy Range: Novel Prospects for the Chemical Characterization of Solid State Surfaces at High Pressure And High Temperature

2001 ◽  
Vol 678 ◽  
Author(s):  
Th. Schedel-Niedrig ◽  
M. Hävecker ◽  
A. Knop-Gericke ◽  
P. Reinke ◽  
R. Schlögl ◽  
...  
Keyword(s):  
Solid State ◽  
Absorption Spectroscopy ◽  
Material Science ◽  
Chemical Characterization ◽  
Total Electron ◽  
Diamond Surfaces ◽  
X Ray ◽  
Surface Electronic Structure ◽  
X Ray Absorption

AbstractAn instrument equipped with total electron yield detectors was designed and constructed for in situ X-ray absorption spectroscopy (XAS) investigations in the soft X-ray range (100 eV ≤ hν ≤ 1000 eV) at elevated pressures (mbar range) and sample temperatures (T ≤ 1000 K) [1]. This allows, for the first time, XAS studies in a surface-sensitive mode of the light elements (Z = 3-15). Furthermore, the gas phase XAS and the surface-related XAS of the solid state phase can be collected simultaneously in order to correlate the gas/solid reaction rate with the surface electronic structure under working conditions in a flow-through mode.The novel experimental tool represents a contribution to the experimental overcoming of the “pressure gap” in material science. In this work examples are presented belonging to the field of heterogeneous catalysis [2-4] and to the reactivity of diamond surfaces [5]. Additionally, prospects for in situ studies in material science will be given.

Contribution of the x‐ray absorption spectroscopy to study TiO2thin films prepared by ion beam induced chemical vapor deposition

1995 ◽  
Vol 77 (2) ◽  
pp. 591-597 ◽  
Author(s):  
A. Caballero ◽  
D. Leinen ◽  
A. Fernández ◽  
A. Justo ◽  
J. P. Espinós ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Absorption Spectroscopy ◽  
Vapor Deposition ◽  
Ion Beam ◽  
Chemical Vapor ◽  
X Ray ◽  
X Ray Absorption

Determination of Zn-containing sites in β-Ga2O3 film grown through mist chemical vapor deposition via X-ray absorption spectroscopy

2020 ◽  
Vol 59 (7) ◽  
pp. 070909
Author(s):  
Noritake Isomura ◽  
Tatsuji Nagaoka ◽  
Yukihiko Watanabe ◽  
Katsuhiro Kutsuki ◽  
Hiroyuki Nishinaka ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Absorption Spectroscopy ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
X Ray ◽  
Ga2o3 Film ◽  
X Ray Absorption

X-RAY ABSORPTION SPECTROSCOPY STUDY OF THIN ZnO FILMS GROWN BY SINGLE SOURCE CVD ON Si(100)

1997 ◽  
Vol 04 (01) ◽  
pp. 39-44 ◽  
Author(s):  
M. H. KOCH ◽  
A. J. HARTMANN ◽  
R. N. LAMB ◽  
M. NEUBER ◽  
J. WALZ ◽  
...  
Keyword(s):  
Film Thickness ◽  
Absorption Spectroscopy ◽  
Film Growth ◽  
Chemical Vapor ◽  
Zno Films ◽  
Single Source ◽  
Zno Film ◽  
High Concentration ◽  
X Ray ◽  
X Ray Absorption

In situ X-ray absorption spectroscopy analysis of early states of ZnO film growth on Si(100) by single source chemical vapor deposition (CVD) has been performed using basic zinc acetate as precursor. A high concentration of carbon is detected at the interface, which decreases with increasing film thickness (~2 nm thickness), and as expected there is some oxidization of the Si surface. This is explained by the chemical nature of the immediate surface upon which the deposition takes place, varying from a reactive, clean Si surface to a less reactive, mixed oxide layer after successive deposition steps. On the latter surface, the decomposition fragments are believed to be more volatile and thus the resulting film contains less carbon contamination. The results confirm that the tetrahedral core of the central oxygen atom with four neighboring zinc atoms, which reassembles the structure in solid ZnO , is kept intact upon decomposition of the precursor on the heated Si (100) (400°C) substrate. However, no long range orientation of the ZnO tetrahedrons was found, indicating that the resulting ZnO film has no preferred crystalline structure for the film thickness investigated here (~2 nm).

Improved diamond surfaces following lift-off and plasma treatments as observed by x-ray absorption spectroscopy

2011 ◽  
Vol 98 (18) ◽  
pp. 181907 ◽  
Author(s):  
Alastair Stacey ◽  
Virginia S. Drumm ◽  
Barbara A. Fairchild ◽  
Kumar Ganesan ◽  
Sergey Rubanov ◽  
...  
Keyword(s):  
Absorption Spectroscopy ◽  
Diamond Surfaces ◽  
X Ray ◽  
Plasma Treatments ◽  
Lift Off ◽  
X Ray Absorption
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