X‐ray absorption fine structure of diamond films grown by chemical vapor deposition

1989 ◽  
Vol 55 (10) ◽  
pp. 957-959 ◽  
Author(s):  
T. W. Capehart ◽  
T. A. Perry ◽  
C. B. Beetz ◽  
D. N. Belton ◽  
G. B. Fisher ◽  
...  
Keyword(s):  
Fine Structure ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Diamond Films ◽  
Chemical Vapor ◽  
X Ray ◽  
Absorption Fine ◽  
X Ray Absorption

X‐ray absorption study of diamond films grown by chemical vapor deposition

1991 ◽  
Vol 9 (3) ◽  
pp. 1140-1144 ◽  
Author(s):  
X.‐Q. Yang ◽  
M. W. Ruckman ◽  
T. A. Skotheim ◽  
M. den Boer ◽  
Yu Zheng ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Absorption Study ◽  
X Ray ◽  
X Ray Absorption

A soft X-ray absorption study of nanodiamond films prepared by hot-filament chemical vapor deposition

2003 ◽  
Vol 372 (3-4) ◽  
pp. 320-324 ◽  
Author(s):  
Y.H Tang ◽  
X.T Zhou ◽  
Y.F Hu ◽  
C.S Lee ◽  
S.T Lee ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Absorption Study ◽  
X Ray ◽  
Hot Filament ◽  
X Ray Absorption

Residual stresses in chemical vapor deposition free-standing diamond films by X-ray diffraction analyses

2000 ◽  
Vol 288 (2) ◽  
pp. 217-222 ◽  
Author(s):  
O Durand ◽  
R Bisaro ◽  
C.J Brierley ◽  
P Galtier ◽  
G.R Kennedy ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Residual Stresses ◽  
Vapor Deposition ◽  
Diamond Films ◽  
Chemical Vapor ◽  
X Ray Diffraction ◽  
Free Standing ◽  
X Ray

scholarly journals Synchrotron Radiation X-Ray Absorption Spectroscopy and Spectroscopic Ellipsometry Studies of InSb Thin Films on GaAs Grown by Metalorganic Chemical Vapor Deposition

2018 ◽  
Vol 2018 ◽  
pp. 1-11 ◽  
Author(s):  
Yingda Qian ◽  
Yuanlan Liang ◽  
Xuguang Luo ◽  
Kaiyan He ◽  
Wenhong Sun ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Synchrotron Radiation ◽  
Absorption Spectroscopy ◽  
Spectroscopic Ellipsometry ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
X Ray ◽  
X Ray Absorption ◽  
Metalorganic Chemical

A series of ultrathin InSb films grown on GaAs by low-pressure metalorganic chemical vapor deposition with different V/III ratios were investigated thoroughly using spectroscopic ellipsometry (SE), X-ray diffraction, and synchrotron radiation X-ray absorption spectroscopy. The results predicted that InSb films on GaAs grown under too high or too low V/III ratios are with poor quality, while those grown with proper V/III ratios of 4.20–4.78 possess the high crystalline quality. The temperature-dependent SE (20–300°C) and simulation showed smooth variations of SE spectra, optical constants (n, k, e1, and ε2), and critical energy points (E1, E1+Δ1, E′0, E2, and E′1) for InSb film when temperature increased from 20°C to 250°C, while at 300°C, large changes appeared. Our study revealed the oxidation of about two atomic layers and the formation of an indium-oxide (InO) layer of ∼5.4 nm. This indicates the high temperature limitation for the use of InSb/GaAs materials, up to 250°C.

(110)-oriented diamond films synthesized by microwave chemical-vapor deposition

1990 ◽  
Vol 5 (11) ◽  
pp. 2469-2482 ◽  
Author(s):  
Koji Kobashi ◽  
Kozo Nishimura ◽  
Koichi Miyata ◽  
Kazuo Kumagai ◽  
Akimitsu Nakaue
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Microwave Plasma ◽  
Hydrogen Plasma ◽  
Diamond Films ◽  
Film Surface ◽  
Chemical Vapor ◽  
Hydrogen Gas ◽  
X Ray ◽  
Bilayer Films

Bilayer diamond films were deposited on Si substrates by microwave-plasma chemical-vapor deposition (CVD) using a methane-hydrogen gas mixture. The first layer was deposited for 3 h using a reaction gas which was composed of 2.5 vol. % methane and 97.5 vol.% hydrogen. The deposited film consisted of very weakly (110)-oriented microcrystalline diamonds as well as amorphous carbon and graphite. In order to remove non-diamond carbons from the film surface, the specimen was treated in hydrogen plasma for 1 h. Finally, a second layer was deposited on the first layer for 14 h using a methane concentration of between 0.2 and 1.6 vol.%. It was found that the x-ray intensity of the (220) diffraction of the bilayer films was much greater than that of the (111) diffraction, indicating that the diamond grains in the second layer were strongly oriented with their crystallographic (110) planes parallel to the substrate surface. X-ray diffraction spectra of bilayer films in which the second layer was deposited for 7, 14, 21, and 35 h using two different methane concentrations, 0.3 and 1.2 vol.%, showed that within periods of up to 21 h, the (220) intensity increased with the deposition time much more quickly than the (111) intensity, indicating that the degree of (110) orientation was further enhanced as the second layer thickness increased. However, the (220) intensity decreased after 21 h, presumably due to thermal randomization. Results of scanning electron microscopy, electron diffraction, and Raman spectroscopy of the bilayer films are also presented.

Synchrotron Radiation X-Ray Absorption and Optical Studies of Cubic SiC Films Grown on Si by Chemical Vapor Deposition

2011 ◽  
Vol 306-307 ◽  
pp. 167-170
Author(s):  
Yu Li Tu ◽  
Yan Hao Huang ◽  
Ling Min Kong ◽  
Kung Yen Lee ◽  
Ling Yun Jang ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Synchrotron Radiation ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Peak Frequency ◽  
Atomic Scale ◽  
X Ray ◽  
Physical And Chemical ◽  
X Ray Absorption ◽  
Sic Films

Synchrotron radiation extended X-ray absorption fine structure and Raman scattering were used to characterize a series of 3C-SiC films grown on Si (100) by chemical vapor deposition. EXAFS can probe the physical and chemical structure of matters at an atomic scale and Raman parameters such as intensity, width, peak frequency and polarization provide fruitful information on the crystal quality and properties of these film materials.

X-ray Characterization of Thin Diamond Films Deposited by Hot-Filament Chemical Vapor Deposition

1990 ◽  
Vol 34 ◽  
pp. 543-555
Author(s):  
Richard F. Hamilton ◽  
Diwakar Garg ◽  
Keith A. Wood ◽  
David S. Hoover
Keyword(s):  
Crystal Structure ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Free Standing ◽  
X Ray ◽  
Long Wavelength ◽  
Transmission Properties ◽  
Hot Filament

AbstractSynthesizing thin diamond films by chemical vapor deposition (CVD) is the most recent and technologically important development in the thin-film field. Thin diamond films are useful in many applications because of their unique physical, chemical, optical, and electronic properties.To assess thin diamond films’ suitability for support membranes in X-ray lithography, X-ray diffraction was used to characterize the crystal structure and orientation of these films deposited on silicon wafers by hot-filament assisted CVD. X-ray transmission properties of free-standing thin diamond films prepared by selectively etching silicon substrates were characterized by X-ray fluorescence in short and long wavelength regions.This paper discusses conventional and grazing incidence diffraction techniques used to study the crystal structure of thin diamond films and compares the results with film morphology. It also describes X-ray transmission properties of these films in terms of Beer's Law, the mass absorption coefficient, and the wavelength of attenuated radiation. Finally, it reveals the long wavelength regions for optimum X-ray lithography operations using polycrystalline diamond (PCD) film.

Contribution of the x‐ray absorption spectroscopy to study TiO2thin films prepared by ion beam induced chemical vapor deposition

1995 ◽  
Vol 77 (2) ◽  
pp. 591-597 ◽  
Author(s):  
A. Caballero ◽  
D. Leinen ◽  
A. Fernández ◽  
A. Justo ◽  
J. P. Espinós ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Absorption Spectroscopy ◽  
Vapor Deposition ◽  
Ion Beam ◽  
Chemical Vapor ◽  
X Ray ◽  
X Ray Absorption
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