Interface Characterization of PbTe/BaSi/Si Heterostructures Grown Using MBE

1992 ◽  
Vol 281 ◽  
Author(s):  
F. Santiago ◽  
D. Woody ◽  
T. K. Chu ◽  
C. A. Huber

ABSTRACTA new substrate material consisting of a buffer layer of a Ba-Si compound was developed by making use of the chemical reaction between BaF2 and Si. This substrate is very promising for the integration of IV-VI semiconductor materials with silicon. PbTe films of excellent quality, as determined by X-ray and Reflected High Energy Electron Diffraction spectra, have been deposited over (111)- and (100)-oriented silicon wafers of 3 inch diameter. These PbTe films are (100)-oriented irrespective of the Si orientation. X-ray photoelectron spectroscopy studies reveal very interesting chemistry at the interface between Ba-Si and Te. They suggest that BaTe may form between PbTe and Ba-Si at their interface. This interfacial region, which is of the order of only a few molecular layers, appears to be critical in the success of the deposition. Thermal cycling showed that the PbTe/BaSi/Si system is mechanically very stable. The possibility of a similar growth mechanism for the deposition of II-VI semiconductors such as CdTe is considered.

1997 ◽  
Vol 476 ◽  
Author(s):  
E. Kondoh ◽  
T.P. Nguyen

AbstractCopper films with a small amount of an alloy element (1 wt % Ti) were metallized on polyimide. Plasma pre-treatment of the polyimide surface and post-metallization annealing were used to modify the interface. Interfaces and metal film layers were investigated; a drastic increase in adhesion strength, the suppression of Cu diffusion into polyimide, and the improvement of (111) texture were found. Composition analysis data taken from the interface indicated the accretion of nitrogen at the interface. The formation of Ti-related chemical bonds, suggested by X-ray photoelectron spectroscopy, can explain the above-mentioned experimental results.


1992 ◽  
Vol 70 (10-11) ◽  
pp. 799-802 ◽  
Author(s):  
Z. H. Lu ◽  
J.-M. Baribeau ◽  
T. E. Jackman

High-energy resolution X-ray photoelectron spectroscopy, with full width at half maximum of 0.41 eV for the Si 2p and of 0.54 eV for the Ge 3d, has been used to study the valence band offsets of different strained Ge layers grown on Si (100). The fractional volume changes in Ge epilayers have been measured by X-ray photoelectron diffraction and are used to correct the valence band maximum shifts caused by strained-induced spin-orbit splitting at the maxima. Band offset values of 0.80, 0.76, and 0.71 eV are found for Si/(Ge5Si5)/Si (100), Si/(Ge4Si4)/Si (100), and Si/(Ge0.5Si0.5)/Si (100) epilayers, respectively.


1994 ◽  
Vol 357 ◽  
Author(s):  
S.A. Chambers ◽  
Y. Liang ◽  
Y. Gao

AbstractWe have grown by molecular beam epitaxy (MBE) structurally coherent layers of MgO and a random bcc alloy of 70% Cr and 30% Mo to which MgO is lattice matched. Specimens werecharacterized by means of reflection high-energy electron diffraction (RHEED), x-ray photoelectron spectroscopy and diffraction (XPS/XPD), transmission electron microscopy (TEM), and atomic force microscopy (AFM). These systems exhibit excellent long- and shortrange crystallographic order, as well as nearly perfect structural coherence across the interface.


Catalysts ◽  
2020 ◽  
Vol 10 (9) ◽  
pp. 980
Author(s):  
Davide M. S. Marcolongo ◽  
Francesco Nocito ◽  
Nicoletta Ditaranto ◽  
Michele Aresta ◽  
Angela Dibenedetto

In the present paper, we report the synthesis and characterization of both binary (Cu2O, Fe2O3, and In2O3) and ternary (Cu2O-Fe2O3 and Cu2O-In2O3) transition metal mixed-oxides that may find application as photocatalysts for solar driven CO2 conversion into energy rich species. Two different preparation techniques (High Energy Milling (HEM) and Co-Precipitation (CP)) are compared and materials properties are studied by means of a variety of characterization and analytical techniques UV-Visible Diffuse Reflectance Spectroscopy (UV-VIS DRS), X-ray Photoelectron Spectroscopy (XPS), X-Ray Diffraction (XRD), Transmission Electron Microscopy (TEM), and Energy Dispersive X-Ray spectrometry (EDX). Appropriate data elaboration methods are used to extract materials bandgap for Cu2O@Fe2O3 and Cu2O@In2O3 prepared by HEM and CP, and foresee whether the newly prepared semiconductor mixed oxides pairs are useful for application in CO2-H2O coprocessing. The experimental results show that the synthetic technique influences the photoactivity of the materials that can correctly be foreseen on the basis of bandgap experimentally derived. Of the mixed oxides prepared and described in this work, only Cu2O@In2O3 shows positive results in CO2-H2O photo-co-processing. Preliminary results show that the composition and synthetic methodologies of mixed-oxides, the reactor geometry, the way of dispersing the photocatalyst sample, play a key role in the light driven reaction of CO2–H2O. This work is a rare case of full characterization of photo-materials, using UV-Visible DRS, XPS, XRD, TEM, EDX for the surface and bulk analytical characterization. Surface composition may not be the same of the bulk composition and plays a key role in photocatalysts behavior. We show that a full material knowledge is necessary for the correct forecast of their photocatalytic behavior, inferred from experimentally determined bandgaps.


Sign in / Sign up

Export Citation Format

Share Document