Growth of YSZ and Y2O3 Films on SI(100) by Solid State Epitaxy

1992 ◽  
Vol 275 ◽  
Author(s):  
J. Wecker ◽  
TH. Matthee ◽  
H. Behner ◽  
G. Friedl ◽  
K. Samwer
Keyword(s):  
Solid State ◽  
Buffer Layers ◽  
High Current ◽  
Low Oxygen ◽  
Critical Temperatures ◽  
Depth Profiles ◽  
Partial Pressures ◽  
Current Densities

ABSTRACTSingle crystalline YSZ and Y2O3 thin films are grown on Si(100) by e-beam evaporation. The amorphous S1O2 surface layer is removed in-situ by initially growing at low oxygen partial pressures in the case of YSZ or by first evaporating metallic Y for the growth of Y2O3. Epitaxy occurs by a solid state reaction after the SiO2 has been reduced by metallic Zr or Y. For Si/YSZ/Y2O3 the growth is cube on cube while in the case of Si/Y2O3/YSZ the oxide layers grow twinned in (110) orientation. XPS analysis and AES depth profiles reveal the reoxidation of the Si during further growth. Critical temperatures of 90 K and high current densities of 3.2×106 A/cm2 are measured on 150 nm thick YBCO films on SOS/YSZ/Y2O3 proving the excellent quality of the YBCO and the underlying buffer layers.

An in situ element permeation constructed high endurance Li–LLZO interface at high current densities

2018 ◽  
Vol 6 (39) ◽  
pp. 18853-18858 ◽  
Author(s):  
Yang Lu ◽  
Xiao Huang ◽  
Yadong Ruan ◽  
Qingsong Wang ◽  
Rui Kun ◽  
...  
Keyword(s):  
Solid Electrolyte ◽  
Al Alloy ◽  
High Current ◽  
Current Densities ◽  
Interfacial Impedance

A Li enriched Li–Al alloy will spontaneously react with an LLZTO solid electrolyte, constructing a highly tolerant SEI with low interfacial impedance.

In Situ Spectroscopic Ellipsometry Study of SiC Oxidation at Low Oxygen-Partial-Pressures

2010 ◽  
Vol 645-648 ◽  
pp. 813-816 ◽  
Author(s):  
Keiko Kouda ◽  
Yasuto Hijikata ◽  
Hiroyuki Yaguchi ◽  
Sadafumi Yoshida
Keyword(s):  
Growth Rate ◽  
Spectroscopic Ellipsometry ◽  
Reaction Rate ◽  
Oxidation Process ◽  
Early Stage ◽  
Oxide Thickness ◽  
Oxide Growth ◽  
Low Oxygen ◽  
Partial Pressures

We have investigated the oxidation process of SiC (000-1) C-face at low oxygen partial pressures using an in-situ spectroscopic ellipsometry. The oxide growth rate decreased steeply at the early stage of oxidation and then slowly decreased with increasing oxide thickness. The initial oxide growth rate was almost proportional to the oxygen　partial　pressure for both the polar directions. This result suggests that the initial interfacial reaction rate is constant regardless of the concentration of oxidants reaching the interface.

Growth of (0001) ZnO Thin Films on Sapphire

1996 ◽  
Vol 449 ◽  
Author(s):  
A. J. Drehman ◽  
P. W. Yip
Keyword(s):  
Surface Roughness ◽  
Buffer Layers ◽  
Zno Films ◽  
X Ray Diffraction ◽  
Axis Orientation ◽  
Force Microscopy ◽  
Sapphire Substrates ◽  
Atomic Force

ABSTRACTUsing reactive rf sputtering, we have grown (0001) oriented ZnO films in situ on heated c-axis sapphire substrates, that are promising, particularly in terms of surface roughness, as buffer layers for the subsequent epitaxial growth of III-V nitride films. We compare the effects of on-axis and off-axis sputter geometries on the film epitaxy and smoothness. We also examined the effect of substrate temperature on the growth and smoothness and quality of the film. X-ray diffraction was used to verify the hexagonal ZnO phase, its c-axis orientation and, qualitatively, the degree of its epitaxy. Atomic Force Microscopy (AFM) was used to determine the ZnO growth morphology and roughness. Our best films, obtained by off-axis sputter deposition, have a surface roughness of less than 1 nm.

scholarly journals Quality of ‘Cripps Pink’ apples stored under controlled atmosphere with ultra-low and extremely low oxygen partial pressures or treated with 1-methylcyclopropene

Bragantia ◽  
2021 ◽  
Vol 80 ◽  
Author(s):  
Raquel Carlos Fernandes ◽  
Cristiano André Steffens ◽  
Jéssica Mayumi Anami ◽  
Deysi Jhoana Camayo Mosquera ◽  
Cassandro Vidal Talamini do Amarante ◽  
...  
Keyword(s):  
Controlled Atmosphere ◽  
Low Oxygen ◽  
Partial Pressures

High-Jc YBCO coatings on reel-to-reel dip-coated Gd2O3 seed buffer layers epitaxially fabricated on biaxially textured Ni and Ni-(3at%W-1.7at%Fe) alloy tapes

2001 ◽  
Vol 689 ◽  
Author(s):  
Tolga Aytug ◽  
M. Paranthaman ◽  
S. Sathyamurthy ◽  
B. W. Kang ◽  
D. B. Beach ◽  
...  
Keyword(s):  
Low Cost ◽  
Dip Coating ◽  
Buffer Layers ◽  
Ex Situ ◽  
X Ray Diffraction ◽  
Ybco Films ◽  
Ni Alloy ◽  
Current Densities ◽  
Alloy Metal

ABSTRACTA low-cost, non-vacuum reel-to reel dip-coating system has been used to continuously fabricate epitaxial Gd2O3 buffer layers on mechanically strengthened, biaxially textured Ni- (3at.%W-1.7at%Fe), defined as Ni-alloy, metal tapes. X-ray diffraction analysis of the seed Gd2O3 layers indicated that well textured films can be obtained at processing temperatures (Tp) between 1100 and 1175°C. Processing speed did not significantly affect the crystalline quality of the Gd2O3. Scanning electron microscopy revealed a continuous, dense and crack-free surface morphology for these dip-coated buffers. The Gd2O3 layer thickness led to remarkable differences in the growth characteristics of the subsequent YSZ and CeO2 layers deposited by rfmagnetron sputtering. Epitaxial YBCO films grown by pulsed laser deposition on the short prototype CeO2/YSZ/Gd2O3/Ni-(3at%W-1.7at%Fe) conductors yielded self-field critical current densities (Jc) as high as 1.2×106 A/cm2 at 77 K. Pure Ni tapes were used to asses the viability of dip-coated buffers for long length coated conductor fabrication. The YBCO films, grown on 80 cm long and 1 cm wide CeO2/YSZ/Gd2O3 buffered Ni tapes by the industrially scalable ex-situ BaF2 precursor process, exhibited end-to-end self-field Jc of 6.25×105 A/cm2 at 77 K.

scholarly journals In Situ Formation of Nano Ni–Co Oxyhydroxide Enables Water Oxidation Electrocatalysts Durable at High Current Densities

2021 ◽  
pp. 2103812
Author(s):  
Jehad Abed ◽  
Shideh Ahmadi ◽  
Laura Laverdure ◽  
Ahmed Abdellah ◽  
Colin P. O'Brien ◽  
...  
Keyword(s):  
Water Oxidation ◽  
High Current ◽  
Current Densities ◽  
In Situ Formation

Труды Физико-технологического института. T. 28: Квантовые компьютеры, микро- и наноэлектроника : физика, технология, диагностика и моделирование

2019 ◽  
Author(s):  
авторов Коллектив
Keyword(s):  
Solid State ◽  
Mathematical Models ◽  
Quantum Computer ◽  
High Current ◽  
Fabrication Technology ◽  
Postgraduate Students ◽  
Technological Processes ◽  
Current Densities ◽  
Physical And Mathematical Models ◽  
Element Base

Том 28 Трудов ФТИАН посвящен актуальным проблемам технологии микро- и наноэлектроники. Сборник включает в себя статьи, в которых представлены последние результаты сотрудников института по физике и моделированию процессов функционирования и технологии изготовления перспективных элементов современной микро- и наноэлектроники. Рассмотренные проблемы относятся, в частности, к разработке физических и математических моделей для эффективного исследования прочностной надежности многослойной наноэлектронной металлизации при больших плотностях тока, приводящих к сильной ионной электромиграции, анализа особенностей процессов, протекающих в нанотранзисторных структурах, а также возможностей совершенствования и оптимизации технологических процессов формирования наноструктурных элементов, в том числе и перспективных для создания полномасштабных твердотельных квантовых компьютеров. Для специалистов в области микро- и наноэлектроники, аспирантов и студентов старших курсов соответствующих специальностей. The next volume 28 of Proceedings of Valiev IPT of RAS (FTIAN) is devoted to urgent problems of micro- and nanoelectronics technology. The topics covered include the articles which present the last results ot the institute scientists on physics and modeling of the processes of operation and fabrication technology of element base for up-to-date or promising micro- and nanoelectronics are presented. In particular, the problems considered refer to development of physical and mathematical models necessary for effective research of the strength reliability of manylayer nanoelectronic interconnections at high current densities leading to the strong ion electromigration, for analyzing the peculiarities of the processes taking place in nanotransistor structures, as well as possibilities for development and optimization of the technological processes of fabrication of nanostructural elements, including ones that are promising for creation of a fullscale solid-state quantum computer. For specialists in the field of micro- and nanoelectronics and undergraduate and postgraduate students of the appropriate disciplines.

Influence of Polysilicon Processing on the Quality of Thin RTP/Furnace Gate Oxides

1990 ◽  
Vol 182 ◽  
Author(s):  
J. Haase ◽  
R. Ferretti ◽  
S. Prasad
Keyword(s):  
Process Parameters ◽  
Thin Layers ◽  
Constant Current ◽  
Gate Oxides ◽  
Different Temperatures ◽  
Current Densities ◽  
Phosphorus Doped ◽  
Mos Structures

AbstractThin layers of oxides (10–11nm) were fabricated by rapid thermal (RTP) or furnace oxidation. The RTP oxides were grown at different temperatures and were exposed to a two step post oxidation anneal (POA). The furnace oxides were grown at one temperature and received different POA/s. As gate metallization, in-situ phosphorus-doped polysilicon was used. Post poly anneal (PPA) is carried out in the RTP system using a set of temperatures. After having defined MOS structures by photolithography oxide charges, breakdown voltages and breakdown charges were determined. For different current densities, FN-voltage shift during constant current injection was monitored to make lifetime predictions. Received data were correlated to the different process parameters.

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