An in situ element permeation constructed high endurance Li–LLZO interface at high current densities

2018 ◽  
Vol 6 (39) ◽  
pp. 18853-18858 ◽  
Author(s):  
Yang Lu ◽  
Xiao Huang ◽  
Yadong Ruan ◽  
Qingsong Wang ◽  
Rui Kun ◽  
...  
Keyword(s):  
Solid Electrolyte ◽  
Al Alloy ◽  
High Current ◽  
Current Densities ◽  
Interfacial Impedance

A Li enriched Li–Al alloy will spontaneously react with an LLZTO solid electrolyte, constructing a highly tolerant SEI with low interfacial impedance.

scholarly journals Demonstration of high current densities and extended cycling in the garnet Li7La3Zr2O12 solid electrolyte

2018 ◽  
Vol 396 ◽  
pp. 314-318 ◽  
Author(s):  
Nathan J. Taylor ◽  
Sandra Stangeland-Molo ◽  
Catherine G. Haslam ◽  
Asma Sharafi ◽  
Travis Thompson ◽  
...  
Keyword(s):  
Solid Electrolyte ◽  
High Current ◽  
Current Densities

scholarly journals In Situ Formation of Nano Ni–Co Oxyhydroxide Enables Water Oxidation Electrocatalysts Durable at High Current Densities

2021 ◽  
pp. 2103812
Author(s):  
Jehad Abed ◽  
Shideh Ahmadi ◽  
Laura Laverdure ◽  
Ahmed Abdellah ◽  
Colin P. O'Brien ◽  
...  
Keyword(s):  
Water Oxidation ◽  
High Current ◽  
Current Densities ◽  
In Situ Formation

In-situ Tailoring Cobalt Nickel Molybdenum Oxide Components for Overall Water-Splitting at High Current Densities

2018 ◽  
Vol 6 (2) ◽  
pp. 413-420 ◽  
Author(s):  
Bowen Ren ◽  
Dongqi Li ◽  
Qiuyan Jin ◽  
Hao Cui ◽  
Chengxin Wang
Keyword(s):  
Water Splitting ◽  
Molybdenum Oxide ◽  
High Current ◽  
Overall Water Splitting ◽  
Cobalt Nickel ◽  
Current Densities

In situ construction of Ni enriched porous NiAl as long-lived electrode for hydrogen evolution at high current densities

2019 ◽  
Vol 489 ◽  
pp. 435-445 ◽  
Author(s):  
Jingtao Zhang ◽  
Zhen Zhang ◽  
Yuanjun Yao ◽  
Xinzhou Ma ◽  
Yibin Yang ◽  
...  
Keyword(s):  
Hydrogen Evolution ◽  
High Current ◽  
Current Densities

Growth of YSZ and Y2O3 Films on SI(100) by Solid State Epitaxy

1992 ◽  
Vol 275 ◽  
Author(s):  
J. Wecker ◽  
TH. Matthee ◽  
H. Behner ◽  
G. Friedl ◽  
K. Samwer
Keyword(s):  
Solid State ◽  
Buffer Layers ◽  
High Current ◽  
Low Oxygen ◽  
Critical Temperatures ◽  
Depth Profiles ◽  
Partial Pressures ◽  
Current Densities

ABSTRACTSingle crystalline YSZ and Y2O3 thin films are grown on Si(100) by e-beam evaporation. The amorphous S1O2 surface layer is removed in-situ by initially growing at low oxygen partial pressures in the case of YSZ or by first evaporating metallic Y for the growth of Y2O3. Epitaxy occurs by a solid state reaction after the SiO2 has been reduced by metallic Zr or Y. For Si/YSZ/Y2O3 the growth is cube on cube while in the case of Si/Y2O3/YSZ the oxide layers grow twinned in (110) orientation. XPS analysis and AES depth profiles reveal the reoxidation of the Si during further growth. Critical temperatures of 90 K and high current densities of 3.2×106 A/cm2 are measured on 150 nm thick YBCO films on SOS/YSZ/Y2O3 proving the excellent quality of the YBCO and the underlying buffer layers.

Electroless Cu for VLSI

MRS Bulletin ◽  
1993 ◽  
Vol 18 (6) ◽  
pp. 31-38 ◽  
Author(s):  
James S.H. Cho ◽  
Ho-Kyu Kang ◽  
S. Simon Wong ◽  
Yosi Shacham-Diamand
Keyword(s):  
Circuit Complexity ◽  
Atomic Weight ◽  
Grain Structure ◽  
Al Alloy ◽  
High Current ◽  
Signal Delay ◽  
Bulk Resistivity ◽  
Key Factor ◽  
Current Densities ◽  
Board Level

Interconnection technology is a key factor in the continual advancement of integrated systems. The rapid increase in device density and circuit complexity through scaling demands a similar increase in the interconnection density. Traditionally, this is achieved by reducing the metal pitch as well as gradually increasing the number of interconnection levels. As the width and spacing of interconnections are scaled down to submicron dimensions at the chip level and micron dimensions at the board level, signal delay, crosstalk, electromigration, and stress-induced migration become important concerns.Cu holds promise as an alternative metallization material to Al alloy due to its low resistivity and ability to reliably carry high-current densities. Cu has a bulk resistivity of 1.68 μΩ-cm, whereas Al has a bulk resistivity of 2.65 μΩ-cm. The only metal with a resistivity lower than Cu is Ag. Since Cu has a melting point and atomic weight both higher than Al, it is expected to have better resistance to electromigration, although properties such as grain structure and resistance to corrosion at high temperatures may also affect electromigration characteristics.

Effets of surfaces on precipitate morphology in irradiated thin foils

1978 ◽  
Vol 36 (1) ◽  
pp. 654-655
Author(s):  
D.I. Potter ◽  
A. Taylor
Keyword(s):  
Ion Irradiation ◽  
Dark Field Image ◽  
Thin Foil ◽  
Dark Field ◽  
Al Alloy ◽  
Bright Field Image ◽  
Dislocation Loops ◽  
Precipitate Morphology ◽  
Thin Foils

Thermal aging of Ni-12.8 at. % A1 and Ni-12.7 at. % Si produces spatially homogeneous dispersions of cuboidal γ'-Ni3Al or Ni3Si precipitate particles arrayed in the Ni solid solution. We have used 3.5-MeV 58Ni+ ion irradiation to examine the effect of irradiation during precipitation on precipitate morphology and distribution. The nearness of free surfaces produced unusual morphologies in foils thinned prior to irradiation. These thin-foil effects will be important during in-situ investigations of precipitation in the HVEM. The thin foil results can be interpreted in terms of observations from bulk irradiations which are described first.Figure 1a is a dark field image of the γ' precipitate 5000 Å beneath the surface(∿1200 Å short of peak damage) of the Ni-Al alloy irradiated in bulk form. The inhomogeneous spatial distribution of γ' results from the presence of voids and dislocation loops which can be seen in the bright field image of the same area, Fig. 1b.

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