Solid State Structures, Decomposition Pathways, and Vapor Phase Byproducts of Y(acac)3 Type OMVPE Precursors for thin films of Yttrium -Containing Ceramic Materials

1992 ◽  
Vol 271 ◽  
Author(s):  
William S. Ree ◽  
Henry A. Luten ◽  
Michael W. Carris ◽  
Eric J. Doskocil ◽  
Virgil L. Goedken
Keyword(s):  
Thin Films ◽  
Solid State ◽  
Vapor Phase ◽  
Related Compound ◽  
Ceramic Materials ◽  
Organometallic Vapor Phase Epitaxy ◽  
Phase Decomposition ◽  
Solid Film ◽  
Solid State Structures ◽  
By Products

ABSTRACTSeveral useful ceramic materials target compositions contain yttrium, Y2O3 and YBa2Cu3O7-δ being the two most widely employed. One known CVD precursor for yttrium-containing thin films is Y(tmhd)3 H2O (tmhd = 2,2,6,6-tetramethylheptane-3,5-dionato). We have determined the structure and examined the vapor phase decomposition of this species. A related compound, [Y(tmod)3]2(tmod = 2,2,7-trimethyloctane-3,5-dionato), has been prepared, structurally characterized, and studied as an organometallic vapor phase epitaxy (OMVPE) precursor for Y and Y2O3 films. Mechanisms of vapor phase decomposition are discussed in terms of solid film deposits and vapor phase by-products. The two precursors are compared to each other with respect to their stability windows, defined as being bound by source volatility on the low side and source stability on the high side.

New Group 2 Compounds Useful for Preparation of thin films of Electronic Ceramics

1992 ◽  
Vol 271 ◽  
Author(s):  
William S. Rees ◽  
Kerstin A. Dippel ◽  
Michael W. Carris ◽  
Celia R. Caballero ◽  
Debra A. Moreno ◽  
...  
Keyword(s):  
Thin Films ◽  
Ceramic Materials ◽  
Lewis Base ◽  
Molecular Precursors ◽  
Electronic Ceramics ◽  
Cvd Growth ◽  
Group 2 ◽  
Solid State Structures ◽  
Phase Solution ◽  
Vapor Pressure Measurements

ABSTRACTWe have prepared examples of several new classes of group 2 compounds, including ether- and amine-substituted metallocenes, inter- and intra-molecular Lewis base stabilized bis(β-diketonates), and clam-shell oligioether bis(alkoxides), and investigated their use as potential sources in the preparation of ceramic materials from molecular precursors. Examinations have included vapor pressure measurements, hydrolytic, oxidative, thermal and photolytic stability, vapor phase, solution and solid state structures, and evaluation for potential CVD growth of thin films of electronic ceramics. Results to date indicate that intramolecular stabilization is more advantageous than intermolecular stabilization for achievement of optimal CVD source criteria, and that completion of the coordination sphere around the metal atom requires tuning of both ligand spatial and electronic requirements.

GaN thin films deposited via organometallic vapor phase epitaxy on α(6H)–SiC(0001) using high‐temperature monocrystalline AlN buffer layers

1995 ◽  
Vol 67 (3) ◽  
pp. 401-403 ◽  
Author(s):  
T. Warren Weeks ◽  
Michael D. Bremser ◽  
K. Shawn Ailey ◽  
Eric Carlson ◽  
William G. Perry ◽  
...  
Keyword(s):  
Thin Films ◽  
High Temperature ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Buffer Layers ◽  
Organometallic Vapor Phase Epitaxy ◽  
Aln Buffer

scholarly journals Vapor Phase Synthesis of SnS Facilitated by Ligand-Driven “Launch Vehicle” Effect in Tin Precursors

Molecules ◽  
2021 ◽  
Vol 26 (17) ◽  
pp. 5367
Author(s):  
Ufuk Atamtürk ◽  
Veronika Brune ◽  
Shashank Mishra ◽  
Sanjay Mathur
Keyword(s):  
Thin Films ◽  
Solid State ◽  
Vapor Phase ◽  
Functional Materials ◽  
Launch Vehicle ◽  
Nmr Studies ◽  
Tertiary Butyl ◽  
Phase Synthesis ◽  
Vapor Phase Synthesis ◽  
Sns Thin Films

Extraordinary low-temperature vapor-phase synthesis of SnS thin films from single molecular precursors is attractive over conventional high-temperature solid-state methods. Molecular-level processing of functional materials is accompanied by several intrinsic advantages such as precise control over stoichiometry, phase selective synthesis, and uniform substrate coverage. We report here on the synthesis of a new heteroleptic molecular precursor containing (i) a thiolate ligand forming a direct Sn-S bond, and (ii) a chelating O^N^N-donor ligand introducing a “launch vehicle”-effect into the synthesized compound, thus remarkably increasing its volatility. The newly synthesized tin compound [Sn(SBut)(tfb-dmeda)] 1 was characterized by single-crystal X-ray diffraction analysis that verified the desired Sn:S ratio in the molecule, which was demonstrated in the direct conversion of the molecular complex into SnS thin films. The multi-nuclei (1H, 13C, 19F, and 119Sn) and variable-temperature 1D and 2D NMR studies indicate retention of the overall solid-state structure of 1 in the solution and suggest the presence of a dynamic conformational equilibrium. The fragmentation behavior of 1 was analyzed by mass spectrometry and compared with those of homoleptic tin tertiary butyl thiolates [Sn(SBut)2] and [Sn(SBut)4]. The precursor 1 was then used to deposit SnS thin films on different substrates (FTO, Mo-coated soda-lime glass) by CVD and film growth rates at different temperatures (300–450 °C) and times (15–60 min), film thickness, crystalline quality, and surface morphology were investigated.

Investigation of the structural defects in GaN thin films grown by organometallic vapor phase epitaxy

2003 ◽  
Vol 9 (1) ◽  
pp. 77-82 ◽  
Author(s):  
J. -H. Choi ◽  
S. -J. Lim ◽  
M. -S. Cho ◽  
N. -H. Cho ◽  
S. -J. Chung ◽  
...  
Keyword(s):  
Thin Films ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Structural Defects ◽  
Organometallic Vapor Phase Epitaxy

scholarly journals A mathematical model of solid-state dewetting of barium thin films on W(112)

2020 ◽  
Vol 15 ◽  
pp. 12
Author(s):  
S.A. Knavel ◽  
T.V. Savina ◽  
M.V. Mroz ◽  
M.E. Kordesch ◽  
C.N. Eads ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Solid State ◽  
Stable Form ◽  
Initial Stage ◽  
Solid Film ◽  
Simply Connected Region ◽  
Simply Connected ◽  
Region Ii

Solid state dewetting occurs when a thin solid film is heated. The temperature of dewetting depends on the thickness of the film; dewetting can be observed in the range of 1∕3 to 1∕2 of the bulk melting temperature. While remaining solid, the film behaves in a manner similar to liquids dewetting and agglomerating to forming islands or droplets. One of the possible mechanisms is the conversion of a metastable thin film geometry into a more stable form. Heating the metastable film gives the film atoms higher mobility, and the films retract, dewetting the surface. This atomic motion can be restricted due to surface anisotropy. We present in situ emission microscopy observations of barium thin films deposited onto W(112) by thermal evaporation. From the modeling viewpoint, the evolution of the film in this system could be divided in four stages: (i) the nucleation and growth of the thin film as a simply connected region; (ii) formation of droplets/islands/hillocks; (iii) nucleation of holes; (iv) evolution of the components of the disconnected film to their equilibrium state. We present a continuum model that is qualitatively consistent with the evolution of the film observed at the initial stage of the experiment and discuss the later stages of the evolution of surface structures.

TEM studies of solid-state reactions in sputter-deposited Nb/Al multilayer thin films

1996 ◽  
Vol 54 ◽  
pp. 1020-1021
Author(s):  
F. Ma ◽  
S. Vivekanand ◽  
K. Barmak ◽  
C. Michaelsen
Keyword(s):  
Thin Films ◽  
Solid State ◽  
Stoichiometric Composition ◽  
Analytical Electron Microscopy ◽  
Grain Structure ◽  
Solid State Reactions ◽  
Multilayer Thin Films ◽  
X Ray Diffraction ◽  
X Ray ◽  
Sputter Deposited

Solid state reactions in sputter-deposited Nb/Al multilayer thin films have been studied by transmission and analytical electron microscopy (TEM/AEM), differential scanning calorimetry (DSC) and X-ray diffraction (XRD). The Nb/Al multilayer thin films for TEM studies were sputter-deposited on (1102)sapphire substrates. The periodicity of the films is in the range 10-500 nm. The overall composition of the films are 1/3, 2/1, and 3/1 Nb/Al, corresponding to the stoichiometric composition of the three intermetallic phases in this system.Figure 1 is a TEM micrograph of an as-deposited film with periodicity A = dA1 + dNb = 72 nm, where d's are layer thicknesses. The polycrystalline nature of the Al and Nb layers with their columnar grain structure is evident in the figure. Both Nb and Al layers exhibit crystallographic texture, with the electron diffraction pattern for this film showing stronger diffraction spots in the direction normal to the multilayer. The X-ray diffraction patterns of all films are dominated by the Al(l 11) and Nb(l 10) peaks and show a merging of these two peaks with decreasing periodicity.

Solid-state fermentation for enhancing the nutraceutical content of agrifood by-products: Recent advances and its industrial feasibility

2021 ◽  
pp. 100926
Author(s):  
Luis O. Cano y Postigo ◽  
Daniel A. Jacobo-Velázquez ◽  
Daniel Guajardo-Flores ◽  
Luis Eduardo Garcia Amezquita ◽  
Tomás García-Cayuela
Keyword(s):  
Solid State ◽  
Solid State Fermentation ◽  
Recent Advances ◽  
By Products

scholarly journals Solid State NMR Spectroscopy a Valuable Technique for Structural Insights of Advanced Thin Film Materials: A Review

Nanomaterials ◽  
2021 ◽  
Vol 11 (6) ◽  
pp. 1494
Author(s):  
Mustapha El Hariri El Nokab ◽  
Khaled O. Sebakhy
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Solid State ◽  
Solid State Nmr ◽  
Pulse Sequences ◽  
3D Structure ◽  
Spectroscopic Techniques ◽  
Film Research ◽  
Versatile Technique ◽  
Work Done

Solid-state NMR has proven to be a versatile technique for studying the chemical structure, 3D structure and dynamics of all sorts of chemical compounds. In nanotechnology and particularly in thin films, the study of chemical modification, molecular packing, end chain motion, distance determination and solvent-matrix interactions is essential for controlling the final product properties and applications. Despite its atomic-level research capabilities and recent technical advancements, solid-state NMR is still lacking behind other spectroscopic techniques in the field of thin films due to the underestimation of NMR capabilities, availability, great variety of nuclei and pulse sequences, lack of sensitivity for quadrupole nuclei and time-consuming experiments. This article will comprehensively and critically review the work done by solid-state NMR on different types of thin films and the most advanced NMR strategies, which are beyond conventional, and the hardware design used to overcome the technical issues in thin-film research.

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