Investigation of the structural defects in GaN thin films grown by organometallic vapor phase epitaxy

2003 ◽  
Vol 9 (1) ◽  
pp. 77-82 ◽  
Author(s):  
J. -H. Choi ◽  
S. -J. Lim ◽  
M. -S. Cho ◽  
N. -H. Cho ◽  
S. -J. Chung ◽  
...  
Keyword(s):  
Thin Films ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Structural Defects ◽  
Organometallic Vapor Phase Epitaxy

GaN thin films deposited via organometallic vapor phase epitaxy on α(6H)–SiC(0001) using high‐temperature monocrystalline AlN buffer layers

1995 ◽  
Vol 67 (3) ◽  
pp. 401-403 ◽  
Author(s):  
T. Warren Weeks ◽  
Michael D. Bremser ◽  
K. Shawn Ailey ◽  
Eric Carlson ◽  
William G. Perry ◽  
...  
Keyword(s):  
Thin Films ◽  
High Temperature ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Buffer Layers ◽  
Organometallic Vapor Phase Epitaxy ◽  
Aln Buffer

Effects of column III alkyl sources on deep levels in GaN grown by organometallic vapor phase epitaxy

1995 ◽  
Vol 67 (12) ◽  
pp. 1721-1723 ◽  
Author(s):  
W. I. Lee ◽  
T. C. Huang ◽  
J. D. Guo ◽  
M. S. Feng
Keyword(s):  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Deep Levels ◽  
Organometallic Vapor Phase Epitaxy
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