Uniform Low-Temperature Deposition of Optical Layers by Plasma-Activated CVD

1992 ◽  
Vol 269 ◽  
Author(s):  
Hans Lydtin ◽  
Arnd Ritz
Keyword(s):  
Low Temperature ◽  
Layer Thickness ◽  
Operation Mode ◽  
Plasma Source ◽  
Multilayer Structures ◽  
Dielectric Layers ◽  
Remote Operation ◽  
Temperature Deposition ◽  
Microwave Applicator ◽  
Materials Used

ABSTRACTPlasma activated CVD in a remote operation mode is applied to the deposition of dielectric layers on extended substrates. Layer thickness uniformity of ±1% over areas of 80mm diameter is demonstrated. The microwave applicator sustaining the plasma source of condensable species is compared in its deposition characteristic to conventional evaporation sources. Deposition efficiencies up to 70% are reached. The layer materials used are SiO2 and TiO2. Multilayer structures are prepared and optically characterized.

scholarly journals Assessment of Potential of the High-Voltage Anodic Plasma Source to Deposit Multilayer Structures Relevant to X-ray Mirror Applications

Coatings ◽  
2020 ◽  
Vol 10 (6) ◽  
pp. 531
Author(s):  
Aurel-Mihai Vlaicu ◽  
Alexandru Anghel ◽  
Marius Badulescu ◽  
Cristina Surdu-Bob
Keyword(s):  
Film Thickness ◽  
Layer Thickness ◽  
Deposition Rate ◽  
High Voltage ◽  
Plasma Source ◽  
Multilayer Structures ◽  
Deposition Technique ◽  
X Ray ◽  
Coating Technique ◽  
Glass Substrates

(1) Background: The high-voltage anodic-plasma (HVAP) coating technique has a series of specificities that are not simultaneously met in other deposition methods. This paper aimed at assessing the potential of HVAP to synthesize quality multilayers for X-ray optics. (2) Methods: Nanolayers of W, Ta, B, and Si were deposited as mono-, bi-, and multilayers onto very smooth glass substrates by HVAP, and their thickness and density were analyzed by X-ray reflectometry. The minimal film thickness needed to obtain continuous nanolayers was also investigated. (3) Results: Nanolayer roughness did not increase with layer thickness, and could be lowered via deposition rate, with values as low as 0.6 for the W nanolayer. Minimal film thickness for continuous films for the studied metals was 4 nm (W), 6 nm (Ta), 2.5 nm (B), and 6 nm (Si). (4) Conclusions: The investigation revealed the range of parameters to be used for obtaining quality nanolayers and multilayers by HVAP. Advantages and possible improvements are discussed. This deposition technique can be tailored for demanding applications such as X-ray mirrors.

Low temperature deposition of a-SiC:H thin films applying a dual plasma source process

2016 ◽  
Vol 616 ◽  
pp. 164-171 ◽  
Author(s):  
Tobias Frischmuth ◽  
Michael Schneider ◽  
Iva Bogdanović Radović ◽  
Zdravko Siketić ◽  
Daniel Maurer ◽  
...  
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Plasma Source ◽  
Source Process ◽  
Low Temperature Deposition ◽  
Temperature Deposition

Low-Temperature Deposition of Inorganic–Organic HfO2–PMMA Hybrid Gate Dielectric Layers for High-Mobility ZnO Thin-Film Transistors

2019 ◽  
Vol 1 (6) ◽  
pp. 1003-1011 ◽  
Author(s):  
Gouri Syamala Rao Mullapudi ◽  
Gonzalo Alonso Velazquez-Nevarez ◽  
Carlos Avila-Avendano ◽  
Jorge Alejandro Torres-Ochoa ◽  
Manuel Angel Quevedo-López ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Thin Film Transistors ◽  
Gate Dielectric ◽  
High Mobility ◽  
Zno Thin Film ◽  
Dielectric Layers ◽  
Low Temperature Deposition ◽  
Temperature Deposition

Role of boundaries in the crystallization of amorphous films

1988 ◽  
Vol 46 ◽  
pp. 626-627
Author(s):  
D. A. Smith
Keyword(s):  
Low Temperature ◽  
Amorphous State ◽  
Nucleation And Growth ◽  
Amorphous Films ◽  
Island Nucleation ◽  
Surface Steps ◽  
Transmission Electron ◽  
Component Systems ◽  
Temperature Deposition

The nucleation and growth processes which lead to the formation of a thin film are particularly amenable to investigation by transmission electron microscopy either in situ or subsequent to deposition. In situ studies have enabled the observation of island nucleation and growth, together with addition of atoms to surface steps. This paper is concerned with post-deposition crystallization of amorphous alloys. It will be argued that the processes occurring during low temperature deposition of one component systems are related but the evidence is mainly indirect. Amorphous films result when the deposition conditions such as low temperature or the presence of impurities (intentional or unintentional) preclude the atomic mobility necessary for crystallization. Representative examples of this behavior are CVD silicon grown below about 670°C, metalloids, such as antimony deposited at room temperature, binary alloys or compounds such as Cu-Ag or Cr O2, respectively. Elemental metals are not stable in the amorphous state.

Fabrication of Chitosan-nanohydroxyapatite Scaffolds via Low-temperature Deposition Manufacturing

2011 ◽  
Vol 26 (1) ◽  
pp. 12-16 ◽  
Author(s):  
Xiong-Fei ZHENG ◽  
Wen-Jie ZHAI ◽  
Ying-Chun LIANG ◽  
Tao SUN
Keyword(s):  
Low Temperature ◽  
Low Temperature Deposition ◽  
Temperature Deposition

Low temperature deposition of BiFeO3 films on Ti foils for piezoelectric applications

2021 ◽  
Vol 204 ◽  
pp. 114152
Author(s):  
Jing Yan ◽  
Jun Ouyang ◽  
Hongbo Cheng ◽  
Peng Yan
Keyword(s):  
Low Temperature ◽  
Low Temperature Deposition ◽  
Temperature Deposition
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