Initial Stage of InGaAs Growth on GaAs(100)

1992 ◽  
Vol 263 ◽  
Author(s):  
D. Gerthsen ◽  
M. Lentzen ◽  
A. Förster
Keyword(s):  
Wide Spectrum ◽  
Three Dimensional ◽  
Lattice Parameter ◽  
Growth Mode ◽  
Balance Model ◽  
Island Size ◽  
Parameter Mismatch ◽  
Transmission Electron ◽  
Initial Stage ◽  
Dimensional Growth

ABSTRACTThe growth mode and the relaxation of MBE grown InxGa1-xiAs layers (0.13 ≦ x ≦ 1.0, nominal film thickness 5 nm) on GaAs(100) substrates with a lattice-parameter mismatch were investigated by transmission electron microscopy (TEM). The transition between two- and three-dimensional growth occurs at x ≈ 0.4. The three-dimensional growth mode for x ≥ 0.6 results in a wide spectrum of island sizes. In contrast to the two-dimensional growth mode, the strain state of a three-dimensionally growing layer is completely inhomogeneous because the relaxation of the strain is correlated with the island size. The reduction of elastic strain for islands is reasonably described by an energy balance model.

Transition from laminar to three-dimensional growth mode in pulsed laser deposited BiFeO3 film on (001) SrTiO3

2012 ◽  
Vol 101 (20) ◽  
pp. 201602 ◽  
Author(s):  
Priya V. Chinta ◽  
Sara J. Callori ◽  
Matthew Dawber ◽  
Almamun Ashrafi ◽  
Randall L. Headrick
Keyword(s):  
Three Dimensional ◽  
Pulsed Laser ◽  
Growth Mode ◽  
Bifeo3 Film ◽  
Dimensional Growth

Interface Structure and Layer Synthesis Modes in Mesotaxial Si/CoSi2/Si Structures

1990 ◽  
Vol 183 ◽  
Author(s):  
R. Hull ◽  
Y. F. Hsieh ◽  
K. T. Short ◽  
A. E. White ◽  
D. Cherns
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Lattice Parameter ◽  
Interface Structure ◽  
Interfacial Structure ◽  
Parameter Mismatch ◽  
Alternative Method ◽  
Transmission Electron

AbstractWe report observations of interfacial structure and consequences for layer synthesis modes in mesotaxial Si/CoSi2/Si structures, as deduced from high resolution transmission electron microscopy (HRTEM). It is argued that relative crystal misalignments arising from the lattice parameter mismatch between the Si and CoSi2 may render classic rigid shift measurements of interfacial structure inaccurate. An alternative method for determining interfacial structure at threedimensional precipitates by analyzing crystal stacking sequences is demonstrated.

Initial Electrodeposition Behavior of Amorphous Ni-P Alloys

2010 ◽  
Vol 154-155 ◽  
pp. 535-539
Author(s):  
Xue Tao Yuan ◽  
Dong Bai Sun ◽  
Zhi Qiang Hua ◽  
Lei Wang
Keyword(s):  
Amorphous Alloy ◽  
Carbon Film ◽  
Three Dimensional ◽  
Amorphous State ◽  
Epitaxial Relationship ◽  
Force Microscopy ◽  
Transmission Electron ◽  
Initial Stage ◽  
Crystal Substrate ◽  
Structure Of Deposits

The growth morphology and structure of deposits during the initial stages of amorphous Ni-P electrodeposition was studied using atomic force microscopy (AFM), X-ray diffraction (XRD) and transmission electron microscope (TEM). Combined electrochemical and surface analytical measurements showed that the electrocrystallization process follows a three-dimensional instantaneous nucleation and growth mechanism. The structure of the Ni-P deposits progressively changed from polycrystalline to amorphous state with increasing electroplating time. Additional electrodeposition was carried out on amorphous carbon film at potential -650mV (SCE) for 5s in the same bath for plating Ni-P alloy. It was confirmed that the formation of crystal Ni at initial stage of electroplating Ni-P amorphous alloy was not caused by the epitaxial relationship between the crystal Ni and the crystal substrate and there was a nucleation process in the electrodeposition of amorphous alloy.

Precipitate Structure in an Alumina Dispersion-Strengthened Copper Base Composite Layer

2010 ◽  
Vol 152-153 ◽  
pp. 634-638
Author(s):  
Bao Hong Tian ◽  
Xiao Hong Chen ◽  
Yi Zhang ◽  
Yong Liu
Keyword(s):  
Electron Microscope ◽  
Transmission Electron Microscope ◽  
Composite Layer ◽  
Lattice Parameter ◽  
Interface Structure ◽  
Parameter Mismatch ◽  
Direction Parallel ◽  
Transmission Electron ◽  
The Matrix ◽  
Α Al2o3

A dilute copper alloy of Cu-0.45wt%Al -0.066wt %Y was selected to fabricate nanometer size Al2O3 particles dispersion-hardened composite layer by using aluminizing-internal oxidation technique. The structure and size of the precipitate, interface structure, lattice parameter mismatch and morphology were investigated by means of high resolution transmission electron microscope, analytical transmission electron microscope and image processing by VEC software. Results show that two different size and structure nano-alumina precipitate were identified as α-Al2O3 and γ-Al2O3 respectively during different processing. The precipitates possess semi-coherence or coherence interface structure to matrix with typical loop-loop contrast. The cubic γ-Al2O3 precipitate in certain crystal plane and direction parallel to the matrix。

The Nucleation and Propagation of Misfit Dislocations aear the Critical Thickness in Ge-Si Strained Epilayers

1987 ◽  
Vol 104 ◽  
Author(s):  
E. P. Kvam ◽  
D. J. Eaglesham ◽  
D. M. Maher ◽  
C. J. Humphreys ◽  
J. C. Bean ◽  
...  
Keyword(s):  
Lattice Parameter ◽  
Dislocation Segment ◽  
Misfit Dislocations ◽  
X Ray Diffraction ◽  
Parameter Mismatch ◽  
Growth Interface ◽  
Edge Type ◽  
X Ray ◽  
Transmission Electron ◽  
Dislocation Behavior

ABSTRACTThe nucleation and propagation of misfit dislocations in Ge-Si strained epilayers on (100) Si have been investigated using transmission electron microscopy and X-ray diffraction topography at low lattice parameter mismatch (˜ 0.8%). Misfit dislocations nucleate as half loops which are predominantly unfaulted (> 90%) at the advancing growth interface. Under the driving force of the epilayer strain, unfaulted half loops glide and expand on inclined { 111 }planes toward the heterointerface (i.e. substrate/epilayer interface). These unfaulted half loops consist of a 60°-dislocation segment which lies along < 011> in a plane parallel to the heterointerface (i.e. (100)) and this segment is connected to the growth interface by two screw dislocation segments which both lie on the same inclined {111} glide plane. As 60° dislocations reach the heterointerface on each of the four inclined {111} variants, they form an orthogonal array of misfit dislocations which lie along [011] and [011]. At higher lattice parameter mismatch (˜ 2%), there appear to be some important changes in the dislocation behavior and these changes result in orthogonal arrays of heterointerface dislocations which are predominantly edge type (i.e. 90°dislocations).

Pressure-Controlled GaN MBE Growth Using a Hollow Anode Nitrogen Ion Source

1996 ◽  
Vol 449 ◽  
Author(s):  
M. S. H. Leung ◽  
R. Klockenbrink ◽  
C. Kisielowski ◽  
H. Fujii ◽  
J. Krüger ◽  
...  
Keyword(s):  
Three Dimensional ◽  
Layer Growth ◽  
Ion Source ◽  
Growth Mode ◽  
Mbe Growth ◽  
Hollow Anode ◽  
Cubic Gan ◽  
Dimensional Growth ◽  
Nitrogen Ion ◽  
Pressure Controlled

ABSTRACTGaN films were grown on sapphire substrates at temperatures below 1000 K utilizing a Hollow Anode nitrogen ion source. A Ga flux limited growth rate of ~ 0.5 µm/h is demonstrated. Active utilization of strain and the assistance of a nitrogen partial pressure during buffer layer growth are found to be crucial issues that can improve the film quality. The best films exhibit a full width at half maximum of the x-ray rocking curves of 80 arcsec and 1.85 meV for the excitonic photoluminescence measured at 4 K. A Volmer-Weber three dimensional growth mode and the spontaneous formation of cubic GaN inclusions in the hexagonal matrix are observed in the investigated growth temperature range. It is argued that this growth mode contributes to a limitation of the carrier mobility in these films that did not exceed 120 cm2/Vs though a minimum carrier concentration of ~ 1015 cm−3 was achieved.

Room Temperature Fabrication of (ZnO)x(InN)1-x films with Step-Terrace Structure by RF Magnetron Sputtering

MRS Advances ◽  
2016 ◽  
Vol 1 (2) ◽  
pp. 115-119 ◽  
Author(s):  
Koichi Matsushima ◽  
Tomoaki Ide ◽  
Daisuke Yamashita ◽  
Hyunwoong Seo ◽  
Kazunori Koga ◽  
...  
Keyword(s):  
Point Defects ◽  
Deposition Temperature ◽  
Strain Energy ◽  
Room Temperature ◽  
Three Dimensional ◽  
Lattice Relaxation ◽  
Rf Magnetron Sputtering ◽  
Growth Mode ◽  
Dimensional Growth ◽  
Atomically Flat

ABSTRACTWe study effects of deposition temperature on growth mode and surface morphology of hetero-epitaxial (ZnO)x(InN)1-x (ZION) films on ZnO templates. ZION films deposited at low temperature of RT-250oC grow two dimensionally, whereas ZION films deposited at high temperature of 350-450oC grow three dimensionally. Growth mode is changed from two-dimensional growth mode to three-dimensional one, because the critical thickness where film strain begin to relax decreases with increasing the deposition temperature. At high deposition temperatures, the number of point defects in ZION films decreases because migration of adatoms on the growing surface is enhanced. The strain energy in ZION films increases with increasing the deposition temperature, since the strain energy is not released by point defects. Therefore, lattice relaxation for the higher deposition temperature begins at the smaller film thickness to release the strain energy. As a result, ZION films with atomically-flat surface were obtained even at RT.

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