Transition from laminar to three-dimensional growth mode in pulsed laser deposited BiFeO3 film on (001) SrTiO3

2012 ◽  
Vol 101 (20) ◽  
pp. 201602 ◽  
Author(s):  
Priya V. Chinta ◽  
Sara J. Callori ◽  
Matthew Dawber ◽  
Almamun Ashrafi ◽  
Randall L. Headrick
Keyword(s):  
Three Dimensional ◽  
Pulsed Laser ◽  
Growth Mode ◽  
Bifeo3 Film ◽  
Dimensional Growth

Pressure-Controlled GaN MBE Growth Using a Hollow Anode Nitrogen Ion Source

1996 ◽  
Vol 449 ◽  
Author(s):  
M. S. H. Leung ◽  
R. Klockenbrink ◽  
C. Kisielowski ◽  
H. Fujii ◽  
J. Krüger ◽  
...  
Keyword(s):  
Three Dimensional ◽  
Layer Growth ◽  
Ion Source ◽  
Growth Mode ◽  
Mbe Growth ◽  
Hollow Anode ◽  
Cubic Gan ◽  
Dimensional Growth ◽  
Nitrogen Ion ◽  
Pressure Controlled

ABSTRACTGaN films were grown on sapphire substrates at temperatures below 1000 K utilizing a Hollow Anode nitrogen ion source. A Ga flux limited growth rate of ~ 0.5 µm/h is demonstrated. Active utilization of strain and the assistance of a nitrogen partial pressure during buffer layer growth are found to be crucial issues that can improve the film quality. The best films exhibit a full width at half maximum of the x-ray rocking curves of 80 arcsec and 1.85 meV for the excitonic photoluminescence measured at 4 K. A Volmer-Weber three dimensional growth mode and the spontaneous formation of cubic GaN inclusions in the hexagonal matrix are observed in the investigated growth temperature range. It is argued that this growth mode contributes to a limitation of the carrier mobility in these films that did not exceed 120 cm2/Vs though a minimum carrier concentration of ~ 1015 cm−3 was achieved.

Room Temperature Fabrication of (ZnO)x(InN)1-x films with Step-Terrace Structure by RF Magnetron Sputtering

MRS Advances ◽  
2016 ◽  
Vol 1 (2) ◽  
pp. 115-119 ◽  
Author(s):  
Koichi Matsushima ◽  
Tomoaki Ide ◽  
Daisuke Yamashita ◽  
Hyunwoong Seo ◽  
Kazunori Koga ◽  
...  
Keyword(s):  
Point Defects ◽  
Deposition Temperature ◽  
Strain Energy ◽  
Room Temperature ◽  
Three Dimensional ◽  
Lattice Relaxation ◽  
Rf Magnetron Sputtering ◽  
Growth Mode ◽  
Dimensional Growth ◽  
Atomically Flat

ABSTRACTWe study effects of deposition temperature on growth mode and surface morphology of hetero-epitaxial (ZnO)x(InN)1-x (ZION) films on ZnO templates. ZION films deposited at low temperature of RT-250oC grow two dimensionally, whereas ZION films deposited at high temperature of 350-450oC grow three dimensionally. Growth mode is changed from two-dimensional growth mode to three-dimensional one, because the critical thickness where film strain begin to relax decreases with increasing the deposition temperature. At high deposition temperatures, the number of point defects in ZION films decreases because migration of adatoms on the growing surface is enhanced. The strain energy in ZION films increases with increasing the deposition temperature, since the strain energy is not released by point defects. Therefore, lattice relaxation for the higher deposition temperature begins at the smaller film thickness to release the strain energy. As a result, ZION films with atomically-flat surface were obtained even at RT.

scholarly journals Switching adsorption and growth behavior of ultrathin [C2C1Im][OTf] films on Au(111) by Pd deposition

2016 ◽  
Vol 18 (36) ◽  
pp. 25143-25150 ◽  
Author(s):  
F. Rietzler ◽  
B. May ◽  
H.-P. Steinrück ◽  
F. Maier
Keyword(s):  
Ionic Liquid ◽  
Photoelectron Spectroscopy ◽  
Three Dimensional ◽  
Liquid Films ◽  
Growth Behavior ◽  
Growth Mode ◽  
Two Dimensional ◽  
X Ray ◽  
Dimensional Growth

In vacuo deposition of ultrathin ionic liquid films combined with angle-resolved X-ray photoelectron spectroscopy demonstrates that the initial three-dimensional growth mode of [C2C1Im][OTf] deposited onto the bare Au(111) surface can be switched to two-dimensional growth by adding submonolayer amounts of Pd.

Initial Stage of InGaAs Growth on GaAs(100)

1992 ◽  
Vol 263 ◽  
Author(s):  
D. Gerthsen ◽  
M. Lentzen ◽  
A. Förster
Keyword(s):  
Wide Spectrum ◽  
Three Dimensional ◽  
Lattice Parameter ◽  
Growth Mode ◽  
Balance Model ◽  
Island Size ◽  
Parameter Mismatch ◽  
Transmission Electron ◽  
Initial Stage ◽  
Dimensional Growth

ABSTRACTThe growth mode and the relaxation of MBE grown InxGa1-xiAs layers (0.13 ≦ x ≦ 1.0, nominal film thickness 5 nm) on GaAs(100) substrates with a lattice-parameter mismatch were investigated by transmission electron microscopy (TEM). The transition between two- and three-dimensional growth occurs at x ≈ 0.4. The three-dimensional growth mode for x ≥ 0.6 results in a wide spectrum of island sizes. In contrast to the two-dimensional growth mode, the strain state of a three-dimensionally growing layer is completely inhomogeneous because the relaxation of the strain is correlated with the island size. The reduction of elastic strain for islands is reasonably described by an energy balance model.

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