Room Temperature Fabrication of (ZnO)x(InN)1-x films with Step-Terrace Structure by RF Magnetron Sputtering

MRS Advances ◽  
2016 ◽  
Vol 1 (2) ◽  
pp. 115-119 ◽  
Author(s):  
Koichi Matsushima ◽  
Tomoaki Ide ◽  
Daisuke Yamashita ◽  
Hyunwoong Seo ◽  
Kazunori Koga ◽  
...  
Keyword(s):  
Point Defects ◽  
Deposition Temperature ◽  
Strain Energy ◽  
Room Temperature ◽  
Three Dimensional ◽  
Lattice Relaxation ◽  
Rf Magnetron Sputtering ◽  
Growth Mode ◽  
Dimensional Growth ◽  
Atomically Flat

ABSTRACTWe study effects of deposition temperature on growth mode and surface morphology of hetero-epitaxial (ZnO)x(InN)1-x (ZION) films on ZnO templates. ZION films deposited at low temperature of RT-250oC grow two dimensionally, whereas ZION films deposited at high temperature of 350-450oC grow three dimensionally. Growth mode is changed from two-dimensional growth mode to three-dimensional one, because the critical thickness where film strain begin to relax decreases with increasing the deposition temperature. At high deposition temperatures, the number of point defects in ZION films decreases because migration of adatoms on the growing surface is enhanced. The strain energy in ZION films increases with increasing the deposition temperature, since the strain energy is not released by point defects. Therefore, lattice relaxation for the higher deposition temperature begins at the smaller film thickness to release the strain energy. As a result, ZION films with atomically-flat surface were obtained even at RT.

Transition from laminar to three-dimensional growth mode in pulsed laser deposited BiFeO3 film on (001) SrTiO3

2012 ◽  
Vol 101 (20) ◽  
pp. 201602 ◽  
Author(s):  
Priya V. Chinta ◽  
Sara J. Callori ◽  
Matthew Dawber ◽  
Almamun Ashrafi ◽  
Randall L. Headrick
Keyword(s):  
Three Dimensional ◽  
Pulsed Laser ◽  
Growth Mode ◽  
Bifeo3 Film ◽  
Dimensional Growth

Synthesis and Characterization of Carbon Nitride Thin Film with Evidence of Nanodomes

2004 ◽  
Vol 843 ◽  
Author(s):  
S. Chowdhury ◽  
M. T. Laugier
Keyword(s):  
Thin Film ◽  
Deposition Temperature ◽  
Carbon Nitride ◽  
Room Temperature ◽  
Electrical Characterization ◽  
Microstructural Characterization ◽  
Rf Magnetron Sputtering ◽  
Synthesis And Characterization ◽  
Sputtering System

ABSTRACTWe have reported the synthesis of carbon nitride thin films with evidence of formation of carbon nanodomes over a range of substrate temperature from 50 °C to 550 °C. An RF magnetron sputtering system was used for depositing carbon nitride films. The size of the nanodomes can be controlled by deposition temperature and increases from 40–80 nm at room temperature to 200–400 nm at high temperature (550 °C). Microstructural characterization was performed by AFM. Electrical characterization shows that these films have conductive behaviour with a resistivity depending on the size of the nanodomes. Resistivity values of 20 mΩ-cm were found for nanodomes of size 40–80 nm falling to 6 m?-cm for nanodomes of size 200–400 nm. Nanoindentation results show that the hardness and Young's modulus of these films are in the range from 9–22 GPa and 100–168 GPa respectively and these values decrease as the size of the nanodomes increases. GXRD results confirm that a crystalline graphitic carbon nitride structure has formed.

Pressure-Controlled GaN MBE Growth Using a Hollow Anode Nitrogen Ion Source

1996 ◽  
Vol 449 ◽  
Author(s):  
M. S. H. Leung ◽  
R. Klockenbrink ◽  
C. Kisielowski ◽  
H. Fujii ◽  
J. Krüger ◽  
...  
Keyword(s):  
Three Dimensional ◽  
Layer Growth ◽  
Ion Source ◽  
Growth Mode ◽  
Mbe Growth ◽  
Hollow Anode ◽  
Cubic Gan ◽  
Dimensional Growth ◽  
Nitrogen Ion ◽  
Pressure Controlled

ABSTRACTGaN films were grown on sapphire substrates at temperatures below 1000 K utilizing a Hollow Anode nitrogen ion source. A Ga flux limited growth rate of ~ 0.5 µm/h is demonstrated. Active utilization of strain and the assistance of a nitrogen partial pressure during buffer layer growth are found to be crucial issues that can improve the film quality. The best films exhibit a full width at half maximum of the x-ray rocking curves of 80 arcsec and 1.85 meV for the excitonic photoluminescence measured at 4 K. A Volmer-Weber three dimensional growth mode and the spontaneous formation of cubic GaN inclusions in the hexagonal matrix are observed in the investigated growth temperature range. It is argued that this growth mode contributes to a limitation of the carrier mobility in these films that did not exceed 120 cm2/Vs though a minimum carrier concentration of ~ 1015 cm−3 was achieved.

scholarly journals Switching adsorption and growth behavior of ultrathin [C2C1Im][OTf] films on Au(111) by Pd deposition

2016 ◽  
Vol 18 (36) ◽  
pp. 25143-25150 ◽  
Author(s):  
F. Rietzler ◽  
B. May ◽  
H.-P. Steinrück ◽  
F. Maier
Keyword(s):  
Ionic Liquid ◽  
Photoelectron Spectroscopy ◽  
Three Dimensional ◽  
Liquid Films ◽  
Growth Behavior ◽  
Growth Mode ◽  
Two Dimensional ◽  
X Ray ◽  
Dimensional Growth

In vacuo deposition of ultrathin ionic liquid films combined with angle-resolved X-ray photoelectron spectroscopy demonstrates that the initial three-dimensional growth mode of [C2C1Im][OTf] deposited onto the bare Au(111) surface can be switched to two-dimensional growth by adding submonolayer amounts of Pd.

Effect of V/III ratio on the growth of hexagonal boron nitride by MOCVD

2015 ◽  
Vol 1726 ◽  
Author(s):  
Qing S. Paduano ◽  
Michael Snure ◽  
Jodie Shoaf
Keyword(s):  
Boron Nitride ◽  
Deposition Temperature ◽  
Hexagonal Boron Nitride ◽  
Three Dimensional ◽  
Growth Mode ◽  
Island Growth ◽  
Continuous Growth ◽  
Growth Modes ◽  
Metal Catalyzed ◽  
Mode Transitions

ABSTRACTIn this report, we describe a process for achieving atomically smooth, few-layer thick, hexagonal boron nitride (h-BN) films on sapphire substrates by MOCVD, using Triethylboron (TEB) and NH3 as precursors. Two different growth modes have been observed depending on the V/III ratio. Three-dimensional (3D) island growth is dominant in the low V/III range; in this range growth rate decreases with increasing deposition temperature. This island growth mode transitions to a self-terminating growth mode when V/III > 2000, over the entire deposition temperature range studied (i.e. 1000-1080oC). Raman spectroscopy verifies the h-BN phase of these films, and atomic force microscopy measurements confirm that the surfaces are smooth and continuous, even over atomic steps on the surface of the substrate. Using X-ray reflectance measurements, the thickness of each film grown under a range of conditions and times was determined to consistently terminate at 1.6nm, with a variation of less than 0.2 nm. Thus we have identified a self-terminating growth mode that enables robust synthesis of h-BN with highly uniform and reliable thickness on non-metal catalyzed substrates. Furthermore, this self-terminating growth behavior has shown signs of transitioning to continuous growth as deposition temperature increases.

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