Heteroepitaxial Growth of GexSi1−x Strained Layer on Si by RRH/VLP—CVD

1992 ◽  
Vol 263 ◽  
Author(s):  
Zheng Youdou ◽  
Zhang Rong ◽  
Hu Liqun ◽  
Gu Shulin ◽  
Wang Ronghua ◽  
...  
Keyword(s):  
Low Temperature ◽  
Boron Doping ◽  
Low Pressure ◽  
Radiant Heating ◽  
Heteroepitaxial Growth ◽  
High Quality ◽  
Strained Layer ◽  
Operation Pressure

ABSTRACTA rapid radiant heating, very low pressure CVD (RRH/VLP—CVD) has been successfully applied to GexSi1−x strained layer epitaxy on Si using SiH4' GeH4' B2H6 and PH3 as reaction gases at low temperature ranging from 550 to 650ĉ for operation pressure around mTorr. High quality GexSi1−x/Si strained layer heterostructure and superlattice were fabricated and high electrically active in—situ boron doping in GexSi1−x epilayer was also successfully achieved.

In situ optical monitoring of AlAs wet oxidation using a novel low-temperature low-pressure steam furnace design

1998 ◽  
Vol 10 (2) ◽  
pp. 197-199 ◽  
Author(s):  
S.A. Feld ◽  
J.P. Loehr ◽  
R.E. Sherriff ◽  
J. Wiemeri ◽  
R. Kaspi
Keyword(s):  
Low Temperature ◽  
Low Pressure ◽  
Wet Oxidation ◽  
Optical Monitoring ◽  
Furnace Design ◽  
Pressure Steam

Low Temperature in Situ Cleaning of Si(100) Surfaces and Transmission Electron Microscopy of Subsequent Growth of Epitaxial Germanium

1988 ◽  
Vol 116 ◽  
Author(s):  
R.A. Rudder ◽  
S.V. Hattangady ◽  
J.B. Posthill ◽  
R.J. Markunas
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Low Temperature ◽  
Carbonaceous Material ◽  
High Energy ◽  
Wafer Surface ◽  
Hydrogen Treatment ◽  
Heteroepitaxial Growth ◽  
Transmission Electron

AbstractA low temperature process for cleaning Si(100) surfaces has been developed. It involves a combination of a modified hot RCA wet chemistry treatment and an in situ hydrogen treatment for the removal of oxides and carbonaceous material from the Si surface. While this treatment is successful in producing reflection high energy electron diffraction patterns which show 1/2-order reconstruction lines, subsequent Ge heteroepitaxial growth at 300°C contains a high density of microtwins. Transmission electron microscopy reveals that most of the microtwins do not propagate to the wafer surface. Furthermore, the Ge/Si interface is not abrupt, and there are regions that do not appear crystalline. This suggests that some contamination is still present on the Si(100) surface after the in situ hydrogen treatments.

Low pressure and low temperature gallium arsenide homoepitaxy employing in-situ generated arsine

1992 ◽  
Vol 21 (3) ◽  
pp. 277-279 ◽  
Author(s):  
B. G. Pihlstrom ◽  
T. Y. Sheng ◽  
L. R. Thompson ◽  
G. J. Collins
Keyword(s):  
Gallium Arsenide ◽  
Low Temperature ◽  
Low Pressure

scholarly journals Process Steps for High Quality Si-Based Epitaxial Growth at Low Temperature via RPCVD

Materials ◽  
2021 ◽  
Vol 14 (13) ◽  
pp. 3733
Author(s):  
Jongwan Jung ◽  
Baegmo Son ◽  
Byungmin Kam ◽  
Yong Sang Joh ◽  
Woonyoung Jeong ◽  
...  
Keyword(s):  
Low Temperature ◽  
Epitaxial Growth ◽  
Chemical Vapor ◽  
Epitaxial Films ◽  
Ex Situ ◽  
High Quality ◽  
Reduced Pressure ◽  
Dry Cleaning ◽  
Gaseous Environment

The key process steps for growing high-quality Si-based epitaxial films via reduced pressure chemical vapor deposition (RPCVD) are investigated herein. The quality of the epitaxial films is largely affected by the following steps in the epitaxy process: ex-situ cleaning, in-situ bake, and loading conditions such as the temperature and gaseous environment. With respect to ex-situ cleaning, dry cleaning is found to be more effective than wet cleaning in 1:200 dilute hydrofluoric acid (DHF), while wet cleaning in 1:30 DHF is the least effective. However, the best results of all are obtained via a combination of wet and dry cleaning. With respect to in-situ hydrogen bake in the presence of H2 gas, the level of impurities is gradually decreased as the temperature increases from 700 °C to a maximum of 850 °C, at which no peaks of O and F are observed. Further, the addition of a hydrogen chloride (HCl) bake step after the H2 bake results in effective in-situ bake even at temperatures as low as 700 °C. In addition, the effects of temperature and environment (vacuum or gas) at the time of loading the wafers into the process chamber are compared. Better quality epitaxial films are obtained when the samples are loaded into the process chamber at low temperature in a gaseous environment. These results indicate that the epitaxial conditions must be carefully tuned and controlled in order to achieve high-quality epitaxial growth.

Process Optimization for the Fabrication of the Thin PtSi Schottky Barrier Diode IRCCD

1994 ◽  
Vol 299 ◽  
Author(s):  
Wang-Nang Wang ◽  
Chia Ho ◽  
Jee-Ming Shiue
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Process Optimization ◽  
Hydrogen Plasma ◽  
Wet Etching ◽  
Low Energy ◽  
High Quality ◽  
Plasma Excitation ◽  
Abrupt Junction

AbstractHigh quality abrupt junction PtSi thin film prepared by the MBE system with in situ precleaning and annealing was obtained. Wet etching and low energy hydrogen plasma excitation to generate H-terminated Si surface and low temperature thermal desorption were used to clean the substrate. IRCCD thus fabricated achieved the quantum efficiency 0.8%. TEM, STM/AFM, AES/ESCA, and RBS were used to monitor the fabrication processes.

scholarly journals Si Surface Preparation for Heteroepitaxial Growth of SiC Using In Situ Oxidation

2015 ◽  
Vol 821-823 ◽  
pp. 205-208 ◽  
Author(s):  
Li Wang ◽  
Sima Dimitrijev ◽  
Alan Iacopi ◽  
Leonie Hold ◽  
Glenn Walker ◽  
...  
Keyword(s):  
Vapour Deposition ◽  
Chemical Vapour ◽  
Surface Preparation ◽  
Surface Cleaning ◽  
Heteroepitaxial Growth ◽  
Si Substrate ◽  
High Quality ◽  
Custom Made ◽  
Pressure Chemical

To achieve high quality SiC growth on Si substrate, it is essential to get a smooth Si surface without forming SiC and graphitic islands during the surface cleaning and before the carbonisation process. In this paper, a novel in-situ surface cleaning method designed for the hetero-epitaxial growth of SiC on Si substrate is developed using a custom-made low-pressure chemical vapour deposition reactor. The results indicate that the combination of ramping in oxygen and subsequent flowing of SiH4 avoids the contamination of Si, enables the oxide layer to be removed smoothly, and subsequently creates a smooth Si surface with regular atomic steps. SiC grown on off-axis Si has better crystallinity and significantly smaller roughness than that grown on on-axis Si.

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