Low Temperature in Situ Cleaning of Si(100) Surfaces and Transmission Electron Microscopy of Subsequent Growth of Epitaxial Germanium

1988 ◽  
Vol 116 ◽  
Author(s):  
R.A. Rudder ◽  
S.V. Hattangady ◽  
J.B. Posthill ◽  
R.J. Markunas
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Low Temperature ◽  
Carbonaceous Material ◽  
High Energy ◽  
Wafer Surface ◽  
Hydrogen Treatment ◽  
Heteroepitaxial Growth ◽  
Transmission Electron

AbstractA low temperature process for cleaning Si(100) surfaces has been developed. It involves a combination of a modified hot RCA wet chemistry treatment and an in situ hydrogen treatment for the removal of oxides and carbonaceous material from the Si surface. While this treatment is successful in producing reflection high energy electron diffraction patterns which show 1/2-order reconstruction lines, subsequent Ge heteroepitaxial growth at 300°C contains a high density of microtwins. Transmission electron microscopy reveals that most of the microtwins do not propagate to the wafer surface. Furthermore, the Ge/Si interface is not abrupt, and there are regions that do not appear crystalline. This suggests that some contamination is still present on the Si(100) surface after the in situ hydrogen treatments.

Transmission Electron Microscopy of Epitaxial silicides grown by ultra high vacuum deposition

1989 ◽  
Vol 47 ◽  
pp. 462-463
Author(s):  
D. Loretto ◽  
J. M. Gibson ◽  
S. M. Yalisove
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Electron Diffraction ◽  
High Vacuum ◽  
High Energy ◽  
Energy Electron ◽  
Ultra High Vacuum ◽  
Ex Situ ◽  
Transmission Electron

The silicides CoSi2 and NiSi2 are both metallic with the fee flourite structure and lattice constants which are close to silicon (1.2% and 0.6% smaller at room temperature respectively) Consequently epitaxial cobalt and nickel disilicide can be grown on silicon. If these layers are formed by ultra high vacuum (UHV) deposition (also known as molecular beam epitaxy or MBE) their thickness can be controlled to within a few monolayers. Such ultrathin metal/silicon systems have many potential applications: for example electronic devices based on ballistic transport. They also provide a model system to study the properties of heterointerfaces. In this work we will discuss results obtained using in situ and ex situ transmission electron microscopy (TEM).In situ TEM is suited to the study of MBE growth for several reasons. It offers high spatial resolution and the ability to penetrate many monolayers of material. This is in contrast to the techniques which are usually employed for in situ measurements in MBE, for example low energy electron diffraction (LEED) and reflection high energy electron diffraction (RHEED), which are both sensitive to only a few monolayers at the surface.

scholarly journals In situ environmental HRTEM discloses low temperature carbon soot oxidation by ceria–zirconia at the nanoscale

2019 ◽  
Vol 55 (27) ◽  
pp. 3876-3878 ◽  
Author(s):  
Eleonora Aneggi ◽  
Jordi Llorca ◽  
Alessandro Trovarelli ◽  
Mimoun Aouine ◽  
Philippe Vernoux
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Low Temperature ◽  
Room Temperature ◽  
Soot Oxidation ◽  
Environmental Transmission ◽  
Transmission Electron ◽  
Carbon Soot ◽  
Environmental Transmission Electron Microscopy

In situ environmental transmission electron microscopy discloses room temperature carbon soot oxidation by ceria–zirconia at the nanoscale.

Visualization of regulated nucleation and growth of lithium sulfides for high energy lithium sulfur batteries

2019 ◽  
Vol 12 (10) ◽  
pp. 3144-3155 ◽  
Author(s):  
Zheng-Long Xu ◽  
Sung Joo Kim ◽  
Donghee Chang ◽  
Kyu-Young Park ◽  
Kyun Seong Dae ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Energy ◽  
Nucleation And Growth ◽  
Transmission Electron ◽  
Lithium Sulfur Batteries ◽  
Lithium Sulfur

The nucleation and growth of lithium sulfides are directly observed by liquid in situ transmission electron microscopy.

Low temperature formation and evolution of a 10 nm amorphous Ni–Si layer on [001] silicon studied by in situ transmission electron microscopy

2009 ◽  
Vol 105 (9) ◽  
pp. 093506 ◽  
Author(s):  
Alessandra Alberti ◽  
Corrado Bongiorno ◽  
Cristian Mocuta ◽  
Till Metzger ◽  
Corrado Spinella ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Low Temperature ◽  
Transmission Electron ◽  
Formation And Evolution

Progress in environmental high-voltage transmission electron microscopy for nanomaterials

2020 ◽  
Vol 378 (2186) ◽  
pp. 20190602
Author(s):  
Nobuo Tanaka ◽  
Takeshi Fujita ◽  
Yoshimasa Takahashi ◽  
Jun Yamasaki ◽  
Kazuyoshi Murata ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Voltage ◽  
High Energy ◽  
Transmission Electron ◽  
Recent Developments ◽  
In Situ Observations ◽  
High Voltage Transmission ◽  
And Function

A new environmental high-voltage transmission electron microscope (E-HVEM) was developed by Nagoya University in collaboration with JEOL Ltd. An open-type environmental cell was employed to enable in-situ observations of chemical reactions on catalyst particles as well as mechanical deformation in gaseous conditions. One of the reasons for success was the application of high-voltage transmission electron microscopy to environmental (in-situ) observations in the gas atmosphere because of high transmission of electrons through gas layers and thick samples. Knock-on damages to samples by high-energy electrons were carefully considered. In this paper, we describe the detailed design of the E-HVEM, recent developments and various applications. This article is part of a discussion meeting issue ‘Dynamic in situ microscopy relating structure and function'.

scholarly journals In Situ Encapsulated Pt Nanoparticles Dispersed in Low Temperature Oxygen for Partial Oxidation of Methane to Syngas

Catalysts ◽  
2019 ◽  
Vol 9 (9) ◽  
pp. 720 ◽  
Author(s):  
Junwen Wang ◽  
Lichao Ma ◽  
Chuanmin Ding ◽  
Yanan Xue ◽  
Yongkang Zhang ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Catalytic Activity ◽  
Low Temperature ◽  
Partial Oxidation ◽  
Pt Nanoparticles ◽  
Partial Oxidation Of Methane ◽  
Oxidation Of Methane ◽  
Transmission Electron

Highly dispersed ultra-small Pt nanoparticles limited in nanosized silicalite-1 zeolite were prepared by in situ encapsulation strategy using H2PtCl6·6H2O as a precursor and tetrapropylammonium hydroxide as a template. The prepared Pt@S-1 catalyst was characterized by X-ray diffraction (XRD), inductively coupled plasma (ICP), transmission electron microscopy (TEM), scanning transmission electron microscopy (STEM), N2 adsorption-desorption, CO adsorption, and TGA techniques and exhibited unmatched catalytic activity and sintering resistance in the partial oxidation of methane to syngas. Strikingly, Pt@S-1 catalyst with further reduced size and increased dispersibility of Pt nanoparticles showed enhanced catalytic activity after low-temperature oxygen calcination. However, for Pt/S-1 catalyst, low-temperature oxygen calcination did not improve its catalytic activity.

Kinetic Studies of Nanoscale Crystallization in Electronic Materials

1995 ◽  
Vol 405 ◽  
Author(s):  
C. Hayzelden ◽  
J. L. Batstone
Keyword(s):  
Electron Microscopy ◽  
Activation Energy ◽  
Transmission Electron Microscopy ◽  
Low Temperature ◽  
Electronic Materials ◽  
Kinetic Studies ◽  
Subsequent Growth ◽  
Transmission Electron ◽  
Amorphous Si

AbstractWe report a kinetic analysis of low-temperature NiSi2-mediated crystallization of amorphous Si by in situ transmission electron microscopy. The initiation of crystallization by formation of crystalline Si on buried NiSi2 precipitates is shown to have an activation energy of 2.8±0.7eV. Crystallization of the amorphous Si via migrating precipitates of NiSi2 occurs with an activation energy of 2.0±0.2eV. The significance of these activation energies is discussed in terms of possible atomistic mechanisms of crystalline Si initiation and subsequent growth. Amorphous Si is reported to crystallize at temperatures as low as 450°C.

Thermal stability of Nb thin films on sapphire

1996 ◽  
Vol 11 (5) ◽  
pp. 1255-1264 ◽  
Author(s):  
Thomas Wagner ◽  
Marko Lorenz ◽  
Manfred Rühle
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Orientation Relationship ◽  
High Energy ◽  
X Ray Diffraction ◽  
Model Study ◽  
Transmission Electron ◽  
The Stability ◽  
Thermal Stability Of

The Nb/α−Al2O3 system has been used as a model study for investigating the stability of different MBE grown epitaxial Nb films on α−Al2O3 substrates. The films were grown at 800 °C in ultrahigh vacuum. The growth process was monitored in situ by reflection high energy electron diffraction (RHEED). After deposition the structure of the film was investigated by x-ray diffraction (XRD) and conventional transmission electron microscopy (CTEM) which encompasses also selected area diffraction (SAD). Both techniques revealed the following orientation relationship between the Nb film and the α–Al2O3 substrate: (0001)α–Al2O3‖ (111)Nb; [2110]α–Al2O3‖ [110]Nb. The stability of the niobium films was investigated by annealing the Nb-film/α–Al2O3 system to temperatures up to 1500 °C for different periods of time. Surprisingly, the orientation relationship between the Nb film and the substrate changed to (0001)α–Al2O3‖ (110)Nb; [0110]α–Al2O3‖ [001]Nb. A model will be developed which shows that above a critical film thickness the growth orientation is metastable with respect to its crystallographic orientation. Furthermore, high resolution transmission electron microscopy (HREM) was performed to investigate the defect structure of the annealed Nb/α–Al2O3 interface.

Oriented attachment induces fivefold twins by forming and decomposing high-energy grain boundaries

Science ◽  
2019 ◽  
Vol 367 (6473) ◽  
pp. 40-45 ◽  
Author(s):  
Miao Song ◽  
Gang Zhou ◽  
Ning Lu ◽  
Jaewon Lee ◽  
Elias Nakouzi ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Grain Boundaries ◽  
Palladium Nanoparticles ◽  
High Energy ◽  
Oriented Attachment ◽  
Transmission Electron ◽  
Wide Range ◽  
Dynamics Simulations

Natural and synthetic nanoparticles composed of fivefold twinned crystal domains have distinct properties. The formation mechanism of these fivefold twinned nanoparticles is poorly understood. We used in situ high-resolution transmission electron microscopy combined with molecular dynamics simulations to demonstrate that fivefold twinning occurs through repeated oriented attachment of ~3-nanometer gold, platinum, and palladium nanoparticles. We discovered two different mechanisms for forming fivefold twinned nanoparticles that are driven by the accumulation and elimination of strain. This was accompanied by decomposition of grain boundaries and the formation of a special class of twins with a net strain of zero. These observations allowed us to develop a quantitative picture of the twinning process. The mechanisms provide guidance for controlling twin structures and morphologies across a wide range of materials.

Sign in / Sign up

Export Citation Format

Share Document