In situ optical monitoring of AlAs wet oxidation using a novel low-temperature low-pressure steam furnace design

1998 ◽  
Vol 10 (2) ◽  
pp. 197-199 ◽  
Author(s):  
S.A. Feld ◽  
J.P. Loehr ◽  
R.E. Sherriff ◽  
J. Wiemeri ◽  
R. Kaspi
Keyword(s):  
Low Temperature ◽  
Low Pressure ◽  
Wet Oxidation ◽  
Optical Monitoring ◽  
Furnace Design ◽  
Pressure Steam

Low pressure and low temperature gallium arsenide homoepitaxy employing in-situ generated arsine

1992 ◽  
Vol 21 (3) ◽  
pp. 277-279 ◽  
Author(s):  
B. G. Pihlstrom ◽  
T. Y. Sheng ◽  
L. R. Thompson ◽  
G. J. Collins
Keyword(s):  
Gallium Arsenide ◽  
Low Temperature ◽  
Low Pressure

Heteroepitaxial Growth of GexSi1−x Strained Layer on Si by RRH/VLP—CVD

1992 ◽  
Vol 263 ◽  
Author(s):  
Zheng Youdou ◽  
Zhang Rong ◽  
Hu Liqun ◽  
Gu Shulin ◽  
Wang Ronghua ◽  
...  
Keyword(s):  
Low Temperature ◽  
Boron Doping ◽  
Low Pressure ◽  
Radiant Heating ◽  
Heteroepitaxial Growth ◽  
High Quality ◽  
Strained Layer ◽  
Operation Pressure

ABSTRACTA rapid radiant heating, very low pressure CVD (RRH/VLP—CVD) has been successfully applied to GexSi1−x strained layer epitaxy on Si using SiH4' GeH4' B2H6 and PH3 as reaction gases at low temperature ranging from 550 to 650ĉ for operation pressure around mTorr. High quality GexSi1−x/Si strained layer heterostructure and superlattice were fabricated and high electrically active in—situ boron doping in GexSi1−x epilayer was also successfully achieved.

scholarly journals An Improved System for Utilizing Low-temperature Waste Heat of Flue Gas from Coal-Fired Power Plants

2017 ◽  
Author(s):  
Shengwei Huang ◽  
Chengzhou Li ◽  
Tianyu Tan ◽  
Peng Fu ◽  
Gang Xu ◽  
...  
Keyword(s):  
Low Temperature ◽  
Energy Saving ◽  
Flue Gas ◽  
Power Output ◽  
Power Plants ◽  
Waste Heat ◽  
Low Pressure ◽  
Steam Extraction ◽  
Pressure Steam ◽  
Net Power Output

In this paper, an improved system to efficiently utilize the low-temperature waste heat (WHUS) from the flue gas of coal-fired power plants is proposed based on heat cascade. The essence of the proposed system is that the waste heat of exhausted flue gas is not only used to preheat air for assisting coal combustion as usual but also to heat up feedwater and the low-pressure steam extraction. Preheated by both the exhaust flue gas in the boiler island and the low-pressure steam extraction in the turbine island, thereby part of the flue gas heat in the air preheater can be saved and introduced to heat the feedwater and the high-temperature condensed water. Consequently, part of the high-pressure steam is saved for further expansion in the steam turbine, which obtains additional net power output. Based on the design data of a typical 1000 MW ultra-supercritical coal-fired power plant in China, in-depth analysis of the energy-saving characteristics of the optimized WHUS and the conventional WHUS is conducted. When the optimized WHUS is adopted in a typical 1000 MW unit, net power output increases by 19.51 MW, exergy efficiency improves to 45.46%, and net annual revenue reaches 4.741 million USD. In terms of the conventional WHUS, these aforementioned performance parameters are only 5.83 MW, 44.80% and 1.244 million USD, respectively. The research of this paper can provide a feasible energy-saving option for coal-fired power plants.

Field ion microscopy

1988 ◽  
Vol 46 ◽  
pp. 434-435
Author(s):  
Gert Ehrlich
Keyword(s):  
Low Temperature ◽  
Sample Surface ◽  
Low Pressure ◽  
Radius Of Curvature ◽  
Field Ion Microscopy ◽  
Phosphor Screen ◽  
Ion Microscopy ◽  
Field Ion Microscope

The field ion microscope, devised by Erwin Muller in the 1950's, was the first instrument to depict the structure of surfaces in atomic detail. An FIM image of a (111) plane of tungsten (Fig.l) is typical of what can be done by this microscope: for this small plane, every atom, at a separation of 4.48Å from its neighbors in the plane, is revealed. The image of the plane is highly enlarged, as it is projected on a phosphor screen with a radius of curvature more than a million times that of the sample. Müller achieved the resolution necessary to reveal individual atoms by imaging with ions, accommodated to the object at a low temperature. The ions are created at the sample surface by ionization of an inert image gas (usually helium), present at a low pressure (< 1 mTorr). at fields on the order of 4V/Å.

In situ Tensile Experiments at Low Temperatures on Niobium Single Crystals by H.V.E.M.

1975 ◽  
Vol 33 ◽  
pp. 58-59
Author(s):  
F. H. Louchet ◽  
L. P. Kubin
Keyword(s):  
Electron Microscope ◽  
Transition Temperature ◽  
Low Temperature ◽  
Slip System ◽  
Low Temperatures ◽  
Tensile Axis ◽  
Image Intensifier ◽  
Screw Dislocations ◽  
Source Operation

Experiments have been carried out on the 3 MeV electron microscope in Toulouse. The low temperature straining holder has been previously described Images given by an image intensifier are recorded on magnetic tape.The microtensile niobium samples are cut in a plane with the two operative slip directions [111] and lying in the foil plane. The tensile axis is near [011].Our results concern:- The transition temperature of niobium near 220 K: at this temperature and below an increasing difference appears between the mobilities of the screw and edge portions of dislocations loops. Source operation and interactions between screw dislocations of different slip system have been recorded.

Role of boundaries in the crystallization of amorphous films

1988 ◽  
Vol 46 ◽  
pp. 626-627
Author(s):  
D. A. Smith
Keyword(s):  
Low Temperature ◽  
Amorphous State ◽  
Nucleation And Growth ◽  
Amorphous Films ◽  
Island Nucleation ◽  
Surface Steps ◽  
Transmission Electron ◽  
Component Systems ◽  
Temperature Deposition

The nucleation and growth processes which lead to the formation of a thin film are particularly amenable to investigation by transmission electron microscopy either in situ or subsequent to deposition. In situ studies have enabled the observation of island nucleation and growth, together with addition of atoms to surface steps. This paper is concerned with post-deposition crystallization of amorphous alloys. It will be argued that the processes occurring during low temperature deposition of one component systems are related but the evidence is mainly indirect. Amorphous films result when the deposition conditions such as low temperature or the presence of impurities (intentional or unintentional) preclude the atomic mobility necessary for crystallization. Representative examples of this behavior are CVD silicon grown below about 670°C, metalloids, such as antimony deposited at room temperature, binary alloys or compounds such as Cu-Ag or Cr O2, respectively. Elemental metals are not stable in the amorphous state.

CHEMISORPTION OF CO AND METHANATION ON Rh SURFACES AT LOW TEMPERATURE AND LOW PRESSURE, AN ATOM-PROBE FIM STUDY

1987 ◽  
Vol 48 (C6) ◽  
pp. C6-487-C6-492
Author(s):  
W. Liu ◽  
D. M. Ren ◽  
C. L. Bao ◽  
T. T. Tsong
Keyword(s):  
Low Temperature ◽  
Atom Probe ◽  
Low Pressure
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