Effect of Biaxial Stress on Solid Phase Epitaxy of Silicon

1992 ◽  
Vol 263 ◽  
Author(s):  
Guo-Quan Lu ◽  
Tapan K. Gupta
Keyword(s):  
Growth Kinetics ◽  
Growth Rates ◽  
Solid Phase ◽  
Biaxial Stress ◽  
Optical Measurements ◽  
Back Side ◽  
Time Resolved ◽  
Tensile Stresses ◽  
Rate Retardation ◽  
Amorphous Surface

ABSTRACTThe effect of biaxial stress on solid phase epitaxial growth (SPEG) rate of crystalline Si(100) into self-implanted amorphous surface layer has been measured. Biaxial stresses in the crystalline and amorphous phases were generated by bending the silicon wafer using the residual stresses in Ge films deposited on the back side of the wafer. Stresses were determined at SPEG temperatures by optical measurements of wafer bending curvatures. Tensile stresses up to 13 MPa in the crystalline phase and 34 MPa in the amorphous phasewere achieved during SPEG at 530ºC. An optical system based on the time-resolved reflectivity (TRR) technique was devised to measure the growth rates of two adjacent samples during a single SPEG run. This enables a direct comparison of the growth rates under different stress conditions without concern for run-to-run temperature variations. We found that the growth kinetics in all the samples were retarded as the c/a interface approached the free surface. However, the extent of this rateretardation was reducedin the stressed samples, leading to stress-enhanced growth kinetics. We speculate that the application of the biaxial tensile stresses might slow down the incorporation of hydrogen into the amorphous phase, a mechanism for the rate-retardation.

The Influence of Implantation-Induced Non-Stoichionetry on the Epitaxial Recrystallization of CoSi2

1993 ◽  
Vol 320 ◽  
Author(s):  
M.C. Ridgway ◽  
A. Vantomme ◽  
A.-M. Van Bavel ◽  
G. Langouche
Keyword(s):  
Phase Separation ◽  
Defect Formation ◽  
Rutherford Backscattering Spectrometry ◽  
Solid Phase ◽  
Rate Reduction ◽  
Dose Ratio ◽  
Time Resolved ◽  
Si Substrates ◽  
Rate Retardation ◽  
Si Ion Implantation

ABSTRACTEpitaxial CoSi2 layers on Si substrates have been amorphized with Co and/or Si ion implantation. The influence of nonstoichiometry on the rate of solid-phase epitaxial growth (SPEG) of amorphized CoSi2 has been investigated with time-resolved reflectivity, Rutherford backscattering spectrometry and Mossbauer spectrometry, the latter with radioactive 57Co probes. A decrease in SPEG rate was apparent with an increase in nonstoichiometry. For a given ion dose, the decrease was greater following Co implantation. The means by which non-stoichiometry is accommodated in a crystalline CoSi2 lattice - either through phase separation or defect formation - has been considered. SPEG rate retardation was also evident in samples implanted with both Si and Co ions with a Si:Co dose ratio of 2:1. Additional mechanisms may thus also contribute to the observed SPEG rate reduction.

Solid Phase Epitaxial Regrowth of Implanted III-V Materials and Alloys

1986 ◽  
Vol 74 ◽  
Author(s):  
Christian Licoppe ◽  
Yves. I. Nissim ◽  
Christelle Meriadec ◽  
Pierre Henoc ◽  
Cecile D'Anterroches
Keyword(s):  
High Resolution ◽  
Ternary Alloy ◽  
Growth Kinetics ◽  
Solid Phase ◽  
Growth Front ◽  
Electron Micrograph ◽  
Characteristic Energy ◽  
Time Resolved ◽  
Thermally Activated ◽  
Resolution Electron

AbstractThe amorphous-crystalline (with residual defects) transition is studied in several III-V binary semiconductors and a ternary alloy. Regrowth shows the same behaviour in all cases. The growth kinetics are thermally activated and the activation energies have been measured using time resolved reflectivity measurements. Correlation with vacancy migration characteristic energy is discussed. In the particular case of GaAs, high resolution electron micrograph of the growth front are displayed. They show a rough microscopic structures together with larger scale smooth deformations, attributed to diffusion instabilities.

Solute Segregation and Dynamics of Solid-Phase Crystallization In in and Sb-Implanted Silicon

1981 ◽  
Vol 4 ◽  
Author(s):  
J. Narayan ◽  
G. L. Olson ◽  
O. W. Holland
Keyword(s):  
Laser Power ◽  
Solid Phase ◽  
Solute Segregation ◽  
Dislocation Loops ◽  
Solid Phase Crystallization ◽  
Time Resolved ◽  
Plan View ◽  
Ion Channeling ◽  
Retrograde Solubility ◽  
Transmission Electron

ABSTRACTTime-resolved-reflectivity measurements have been combined with transmission electron microscopy (cross-section and plan-view), Rutherford backscattering and ion channeling techniques to study the details of laser induced solid phase epitaxial growth in In+ and Sb+ implanted silicon in the temperature range from 725 to 1500 °K. The details of microstructures including the formation of polycrystals, precipitates, and dislocations have been correlated with the dynamics of crystallization. There were limits to the dopant concentrations which could be incorporated into substitutional lattice sites; these concentrations exceeded retrograde solubility limits by factors up to 70 in the case of the Si-In system. The coarsening of dislocation loops and the formation of a/2<110>, 90° dislocations in the underlying dislocation-loop bands are described as a function of laser power.

scholarly journals Synthetic algal-bacteria consortia for space-efficient microalgal growth in a simple hydrogel system

2021 ◽  
Author(s):  
Noah Martin ◽  
Tatum Bernat ◽  
Julie Dinasquet ◽  
Andrea Stofko ◽  
April Damon ◽  
...  
Keyword(s):  
Electron Transport ◽  
Growth Rates ◽  
Commercial Production ◽  
Light Curves ◽  
Optical Measurements ◽  
Natural Seawater ◽  
Biotechnological Applications ◽  
Spatial Efficiency ◽  
Green Microalga ◽  
Hydrogel System

AbstractPhotosynthetic microalgae are an attractive source of food, fuel, or nutraceuticals, but commercial production of microalgae is limited by low spatial efficiency. In the present study we developed a simple photosynthetic hydrogel system that cultivates the green microalga, Marinichlorella kaistiae KAS603, together with a novel strain of the bacteria, Erythrobacter sp. We tested the performance of the co-culture in the hydrogel using a combination of chlorophyll-a fluorimetry, microsensing, and bio-optical measurements. Our results showed that growth rates in algal–bacterial hydrogels were about threefold enhanced compared to hydrogels with algae alone. Chlorophyll-a fluorimetry–based light curves found that electron transport rates were enhanced about 20% for algal–bacterial hydrogels compared to algal hydrogels for intermediate irradiance levels. We also show that the living hydrogel is stable under different environmental conditions and when exposed to natural seawater. Our study provides a potential bio-inspired solution for problems that limit the space-efficient cultivation of microalgae for biotechnological applications.

The kinetics of Ge lateral overgrowth on SiO2

MRS Advances ◽  
2015 ◽  
Vol 1 (23) ◽  
pp. 1703-1708 ◽  
Author(s):  
M. Yako ◽  
N. J. Kawai ◽  
Y. Mizuno ◽  
K. Wada
Keyword(s):  
Growth Kinetics ◽  
Growth Rates ◽  
Growth Process ◽  
Theoretical Calculations ◽  
Film Formation ◽  
Lateral Overgrowth ◽  
Flat Film ◽  
The Difference ◽  
Kinetics Of

ABSTRACTThe kinetics of Ge lateral overgrowth on SiO2 with line-shaped Si seeds is examined. The growth process is described by the difference between the growth rates of Ge on (100) planes (GR100) and <311> facets (GR311). The theoretical calculations well reproduce the growth kinetics. It is shown that narrowing the line-seeds helps Ge coalescence and flat film formation.

scholarly journals Instrument response function acquisition in reflectance geometry for time-resolved diffuse optical measurements

2019 ◽  
Vol 11 (1) ◽  
pp. 240 ◽  
Author(s):  
Ileana Pirovano ◽  
Rebecca Re ◽  
Alessia Candeo ◽  
Davide Contini ◽  
Alessandro Torricelli ◽  
...  
Keyword(s):  
Response Function ◽  
Optical Measurements ◽  
Time Resolved ◽  
Instrument Response Function ◽  
Instrument Response

Time-Resolved Reflectivity Study of Solid-Phase Epitaxial Regrowth in Relaxed and Strained Si1−xGex Epilayers

1992 ◽  
Vol 281 ◽  
Author(s):  
T. E. Haynes ◽  
C. Lee ◽  
K. S. Jones
Keyword(s):  
Composition Dependence ◽  
Solid Phase ◽  
Strain Relaxation ◽  
Alloy Layer ◽  
Atomic Fraction ◽  
Bulk Alloy ◽  
Strained Layers ◽  
Time Resolved ◽  
Epitaxial Regrowth ◽  
Different Types

ABSTRACTThe rate of solid-phase epitaxial regrowth has been studied using time-resolved reflectivity in three different types of SiGe/Si epilayers amorphized by ion implantation. In two of these cases, the alloy epilayer contained either 12% or 20% Ge, and the amorphization depth was greater than the thickness (2000 Å) of the SiGe alloy layer. Time-resolved reflectivity measurements showed that the rate of regrowth was not constant in these two cases, but first decreased after passing the SiGe/Si interface, and then increased. The minimum regrowth rate occurred closer to the SiGe/Si interface in the epilayers with the larger Ge atomic fraction. In the third type of sample, the alloy epilayer thickness was ∼7μm, so that the initial epilayer (15% Ge) had the lattice constant of the bulk alloy. Furthermore, amorphization and regrowth occurred entirely within the relaxed alloy layer. In this case, the regrowth rate was constant. The composition dependence of the regrowth-rate transient in the strained layers is discussed in the context of a ‘critical-thickness’ model of strain relaxation.

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