The kinetics of Ge lateral overgrowth on SiO2
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ABSTRACTThe kinetics of Ge lateral overgrowth on SiO2 with line-shaped Si seeds is examined. The growth process is described by the difference between the growth rates of Ge on (100) planes (GR100) and <311> facets (GR311). The theoretical calculations well reproduce the growth kinetics. It is shown that narrowing the line-seeds helps Ge coalescence and flat film formation.
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2020 ◽
Vol 2
(6)
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2001 ◽
Vol 67
(6)
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pp. 2499-2506
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1999 ◽
Vol 206
(1-2)
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pp. 109-118
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1970 ◽
Vol 28
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pp. 440-441
2001 ◽
Vol 11
(PR3)
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pp. Pr3-189-Pr3-196
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