Direct measurement of solid‐phase epitaxial growth kinetics in GaAs by time‐resolved reflectivity

1985 ◽  
Vol 58 (8) ◽  
pp. 3094-3096 ◽  
Author(s):  
C. Licoppe ◽  
Y. I. Nissim ◽  
C. Meriadec
Keyword(s):  
Epitaxial Growth ◽  
Direct Measurement ◽  
Growth Kinetics ◽  
Solid Phase ◽  
Time Resolved

scholarly journals Effect of Non-Hydrostatic Stress on Kinetics and Interfacial Roughness During Solid Phase Epitaxial Growth in Si

1996 ◽  
Vol 441 ◽  
Author(s):  
William Barvosa-Carter ◽  
Michael J. Aziz
Keyword(s):  
Growth Rate ◽  
Epitaxial Growth ◽  
Uniaxial Compression ◽  
Solid Phase ◽  
Hydrostatic Stress ◽  
Uniaxial Stress ◽  
Cross Sectional ◽  
Time Resolved ◽  
Crystal Interface

AbstractWe report preliminary in-situ time-resolved measurements of the effect of uniaxial stress on solid phase epitaxial growth in pure Si (001) for the case of stress applied parallel to the amorphous-crystal interface. The growth rate is reduced by the application of uniaxial compression, in agreement with previous results. Additionally, the velocity continues to decrease with time. This is consistent with interfacial roughening during growth under stress, and is supported by both reflectivity measurements and cross-sectional TEM observations. We present a new kinetically-driven interfacial roughening mechanism which is consistent with our observations.

Low-Temperature, Solid-Phase Epitaxial Growth of Amorphized, Non-Stoichiometric GaAs

1995 ◽  
Vol 378 ◽  
Author(s):  
K. B. Belay ◽  
D. L. Llewellyn ◽  
M. C. Ridgway
Keyword(s):  
Low Temperature ◽  
Epitaxial Growth ◽  
Rutherford Backscattering Spectrometry ◽  
Solid Phase ◽  
Present Report ◽  
Time Resolved ◽  
Crystalline Layer ◽  
Transmission Electron ◽  
High Doses ◽  
Insulating Properties

AbstractNon-stoichiometric GaAs layers with semi-insulating properties can be produced by low-temperature molecular beam epitaxy or ion implantation. The latter is the subject of the present report wherein the solid-phase epitaxial growth of amorphized, non-stoichiometric GaAs layers has been investigated with time-resolved reflectivity, Rutherford backscattering spectrometry and transmission electron microscopy. GaAs substrates were implanted with Ga and/or As ions and annealed in air at a temperature of 260°C. The recrystallized material was composed of a thin, crystalline layer bordered by a thick, twinned layer. Non-stoichiometry results in a roughening of the amorphous/crystalline interface and the transformation from planar to non-planar regrowth. The onset of the transformation and the rate thereof can increase with an increase in non-stoichiometry. Non-stoichiometry can be achieved on a macroscopic scale via Ga or As implants or on a microscopic scale via Ga and As implants. The influence of the latter is greatest at low doses whilst the former dominates at high doses.

Effect of Biaxial Stress on Solid Phase Epitaxy of Silicon

1992 ◽  
Vol 263 ◽  
Author(s):  
Guo-Quan Lu ◽  
Tapan K. Gupta
Keyword(s):  
Growth Kinetics ◽  
Growth Rates ◽  
Solid Phase ◽  
Biaxial Stress ◽  
Optical Measurements ◽  
Back Side ◽  
Time Resolved ◽  
Tensile Stresses ◽  
Rate Retardation ◽  
Amorphous Surface

ABSTRACTThe effect of biaxial stress on solid phase epitaxial growth (SPEG) rate of crystalline Si(100) into self-implanted amorphous surface layer has been measured. Biaxial stresses in the crystalline and amorphous phases were generated by bending the silicon wafer using the residual stresses in Ge films deposited on the back side of the wafer. Stresses were determined at SPEG temperatures by optical measurements of wafer bending curvatures. Tensile stresses up to 13 MPa in the crystalline phase and 34 MPa in the amorphous phasewere achieved during SPEG at 530ºC. An optical system based on the time-resolved reflectivity (TRR) technique was devised to measure the growth rates of two adjacent samples during a single SPEG run. This enables a direct comparison of the growth rates under different stress conditions without concern for run-to-run temperature variations. We found that the growth kinetics in all the samples were retarded as the c/a interface approached the free surface. However, the extent of this rateretardation was reducedin the stressed samples, leading to stress-enhanced growth kinetics. We speculate that the application of the biaxial tensile stresses might slow down the incorporation of hydrogen into the amorphous phase, a mechanism for the rate-retardation.

Stressed solid-phase epitaxial growth of (011) Si

2009 ◽  
Vol 24 (2) ◽  
pp. 305-309 ◽  
Author(s):  
N.G. Rudawski ◽  
K.S. Jones ◽  
R. Gwilliam
Keyword(s):  
Epitaxial Growth ◽  
Growth Kinetics ◽  
Growth Velocity ◽  
Activation Volume ◽  
Solid Phase ◽  
Uniaxial Stress ◽  
Atomistic Model ◽  
Substrate Orientation ◽  
Free Case ◽  
Kinetics Of

The solid-phase epitaxial growth kinetics of amorphized (011) Si with application of in-plane uniaxial stress to magnitude of 0.9 ± 0.1 GPa were studied. Tensile stresses did not appreciably change the growth velocity compared with the stress-free case, whereas compression tended to retard the growth velocity to approximately one-half the stress-free value. The results are explained using a prior generalized atomistic model of stressed solid-solid phase transformations. In conjunction with prior observations of stressed solid-phase epitaxial growth of (001) Si, it is advanced that the activation volume tensor associated with ledge migration may be substrate orientation-dependent.

Solid Phase Epitaxial Regrowth of Implanted III-V Materials and Alloys

1986 ◽  
Vol 74 ◽  
Author(s):  
Christian Licoppe ◽  
Yves. I. Nissim ◽  
Christelle Meriadec ◽  
Pierre Henoc ◽  
Cecile D'Anterroches
Keyword(s):  
High Resolution ◽  
Ternary Alloy ◽  
Growth Kinetics ◽  
Solid Phase ◽  
Growth Front ◽  
Electron Micrograph ◽  
Characteristic Energy ◽  
Time Resolved ◽  
Thermally Activated ◽  
Resolution Electron

AbstractThe amorphous-crystalline (with residual defects) transition is studied in several III-V binary semiconductors and a ternary alloy. Regrowth shows the same behaviour in all cases. The growth kinetics are thermally activated and the activation energies have been measured using time resolved reflectivity measurements. Correlation with vacancy migration characteristic energy is discussed. In the particular case of GaAs, high resolution electron micrograph of the growth front are displayed. They show a rough microscopic structures together with larger scale smooth deformations, attributed to diffusion instabilities.

The influence of implanted impurities on the thermally-induced epitaxial recrystallization of CoSi2

1991 ◽  
Vol 6 (5) ◽  
pp. 1035-1039 ◽  
Author(s):  
M.C. Ridgway ◽  
R.G. Elliman ◽  
M. Petravic ◽  
R.P. Thornton ◽  
J.S. Williams
Keyword(s):  
Mass Spectrometry ◽  
Low Temperature ◽  
Epitaxial Growth ◽  
Secondary Ion Mass Spectrometry ◽  
Solid Phase ◽  
Impurity Diffusion ◽  
Time Resolved ◽  
Thermally Induced ◽  
Cation Sites ◽  
Secondary Ion

The influence of implanted impurities (B, O, P, Ar, Xe, Pb, and Bi) on the rate of low-temperature (138 °C), solid-phase epitaxial growth (SPEG) of amorphized CoSi2 has been studied. SPEG rates of impurity-implanted CoSi2, as determined from time-resolved reflectivity measurements, were retarded for all impurities compared to that of Si-implanted CoSi2. The extent of retardation varied from a factor of 1.5 for P to 9.4 for Xe. Channeling measurements of impurity-implanted CoSi2 indicated that Xe and Bi atoms were located on nonsubstitutional lattice sites while ∼40% of Pb atoms occupied either substitutional sites or vacant interstitial cation sites following annealing. The presence of impurities did not affect the CoSi2 post-anneal crystalline quality, and no significant impurity diffusion was apparent at 138 °C from secondary-ion mass spectrometry measurements.

Nonhydrostatic Stress Effects on Solid Phase Epitaxial Growth in Silicon

1994 ◽  
Vol 356 ◽  
Author(s):  
William B. Carter ◽  
Michael J. Aziz
Keyword(s):  
Growth Rate ◽  
Epitaxial Growth ◽  
Uniaxial Compression ◽  
Cross Section ◽  
Solid Phase ◽  
Quantitative Agreement ◽  
Ex Situ ◽  
Time Resolved ◽  
Stress Effects ◽  
Crystal Interface

AbstractThe dependence of solid phase epitaxial growth in Si on uniaxial compression applied perpendicular to the amorphous-crystal interface is investigated. Long, thin pure Si bars of square cross section are ion-implanted to produce amorphous layers on the end faces. The bars are placed end-to-end and uniaxially loaded at temperature to partially regrow the amorphous layers. The resulting growth rates are measured ex situ by re-heating the samples on a hot stage and using time-resolved reflectivity to deduce interface depths. Preliminary results are that uniaxial compression is more effective than hydrostatic pressure for enhancing the growth rate, in qualitative but not quantitative agreement with previously made predictions.

Characterization of the Solid-Phase Epitaxial Growth of Amorphized Gaas with In-Situ Electron Microscopy

1996 ◽  
Vol 421 ◽  
Author(s):  
K. B. Belay ◽  
M. C. Ridgway ◽  
D. J. Llewellyn
Keyword(s):  
Electron Microscopy ◽  
Single Crystal ◽  
Epitaxial Growth ◽  
Solid Phase ◽  
Ex Situ ◽  
In Situ Tem ◽  
Recrystallization Process ◽  
Time Resolved ◽  
Rich Material

AbstractThe influence of non-stoichiometry on the solid-phase epitaxial growth of amorphized GaAs has been studied with in-situ Transmission Electron Microscopy (TEM). Ion-implantation has been used to produce microscopic non-stoichiometry via Ga and As implants and macroscopic non-stoichiometry via Ga or As implants. It has been demonstrated that amorphous GaAs recrystallizes into a thin single-crystal layer and a thick heavily twinned layer. Video images of the recrystallization process have been quantified for the first time to study the velocity of the crystalline/amorphous (c/a)-interface as a function of depth and ion species. Regrowth rates of the single crystal and twinned layers as functions of non-stoichiometry have been calculated. The phase transformation is rapid in Ga-rich material. In-situ TEM results are consistent with conventional in-situ Time Resolved Reflectivity, ex-situ Rutherford Backscattering Spectroscopy and Channelling measurements and ex-situ TEM.

Model for Epitaxial growth of Cobalt on CU(100)

1989 ◽  
Vol 160 ◽  
Author(s):  
Dimitri D. Vvedensky ◽  
Shaun Clarke
Keyword(s):  
Epitaxial Growth ◽  
Growth Kinetics ◽  
Solid Model ◽  
Free Energies ◽  
Diffusion Parameters ◽  
The Difference ◽  
Kinetics Of

AbstractThe epitaxial growth kinetics of Co on Cu(100) are investigated with a kinetic solid-on-solid model. Two effects are found to dominate the growth of this system reflecting the difference in surface free energies betweenthe two materials: the difference of diffusion parameters, and the inability of Co to wet Cu(100) at lower temperatures.

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