Solid Phase Epitaxial Regrowth of Implanted III-V Materials and Alloys
Keyword(s):
AbstractThe amorphous-crystalline (with residual defects) transition is studied in several III-V binary semiconductors and a ternary alloy. Regrowth shows the same behaviour in all cases. The growth kinetics are thermally activated and the activation energies have been measured using time resolved reflectivity measurements. Correlation with vacancy migration characteristic energy is discussed. In the particular case of GaAs, high resolution electron micrograph of the growth front are displayed. They show a rough microscopic structures together with larger scale smooth deformations, attributed to diffusion instabilities.
1970 ◽
Vol 28
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pp. 258-259
1996 ◽
Vol 54
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pp. 672-673
1996 ◽
Vol 45
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pp. 113-118
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1991 ◽
Vol 62
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pp. 1256-1262
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1986 ◽
Vol 25
(Part 2, No. 10)
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pp. L814-L817
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1977 ◽
Vol 33
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pp. 622-626
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