scholarly journals Large bandgap shift in InGaAs(P)/InP multi-quantum well structure obtained by impurity-free vacancy diffusion using SiO2 capping and its application to photodetectors

1998 ◽  
Author(s):  
Sang-Kee Si ◽  
Sung-June Kim ◽  
Ju-Han Lee ◽  
Deok Ho Yeo ◽  
Kyung-Hun Yoon
Keyword(s):  
Quantum Well ◽  
Vacancy Diffusion ◽  
Quantum Well Structure ◽  
Multi Quantum Well ◽  
Free Vacancy

Intermixing Characteristics of Strained-InGaAs/InGaAsP Multiple Quantum Well Structure Using Impurity-Free Vacancy Diffusion

1999 ◽  
Vol 38 (Part 2, No. 11B) ◽  
pp. L1303-L1305 ◽  
Author(s):  
Jung Woo Park ◽  
Hyun Soo Kim ◽  
Jung Soo Kim ◽  
Dae Kon Oh ◽  
Kwang Ryong Oh ◽  
...  
Keyword(s):  
Quantum Well ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Vacancy Diffusion ◽  
Quantum Well Structure ◽  
Free Vacancy

scholarly journals Characteristics Of Room Temperature-CW Operated InGaN Multi-Quantum-Well-Structure Laser Diodes

1997 ◽  
Vol 2 ◽  
Author(s):  
Shuji Nakamura
Keyword(s):  
Quantum Well ◽  
Carrier Density ◽  
Room Temperature ◽  
Continuous Wave ◽  
Laser Diodes ◽  
Gain Coefficient ◽  
Threshold Current ◽  
Quantum Well Structure ◽  
Multi Quantum Well ◽  
Structure Laser

The continuous-wave (CW) operation of InGaN multi-quantum-well-structure laser diodes (LDs) was demonstrated at room temperature (RT) with a lifetime of 35 hours. The threshold current and the voltage of the LDs were 80 mA and 5.5 V, respectively. The threshold current density was 3.6 kA/cm2. When the temperature of the LDs was varied, large mode hopping of the emission wavelength was observed. The carrier lifetime and the threshold carrier density were estimated to be 2-10 ns and 1-2 × 1020/cm3, respectively. From the measurements of gain spectra and an external differential quantum efficiency dependence on the cavity length, the differential gain coefficient, the transparent carrier density, threshold gain and internal loss were estimated to be 5.8×10−17 cm2, 9.3×1019 cm−3, 5200 cm−1 and 43 cm−1, respectively.

Red-shift in the InGaAsP/GaInP active region using impurity free vacancy diffusion induced quantum well intermixing

2015 ◽  
Vol 644 ◽  
pp. 398-403 ◽  
Author(s):  
Tao Lin ◽  
Haoqing Zhang ◽  
Ruijuan Sun ◽  
Yupeng Duan ◽  
Nan Lin ◽  
...  
Keyword(s):  
Active Region ◽  
Quantum Well ◽  
Red Shift ◽  
Vacancy Diffusion ◽  
Quantum Well Intermixing ◽  
Free Vacancy

Current bistability in a weakly coupled multi-quantum well structure: a magnetic field induced ‘memory effect’

2009 ◽  
Vol 42 (14) ◽  
pp. 145109 ◽  
Author(s):  
W H M Feu ◽  
J M Villas-Bôas ◽  
L A Cury ◽  
P S S Guimarães ◽  
G S Vieira ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Quantum Well ◽  
Memory Effect ◽  
Quantum Well Structure ◽  
Weakly Coupled ◽  
Multi Quantum Well

Optical gain and carrier lifetime of InGaN multi‐quantum well structure laser diodes

1996 ◽  
Vol 69 (11) ◽  
pp. 1568-1570 ◽  
Author(s):  
Shuji Nakamura ◽  
Masayuki Senoh ◽  
Shin‐ichi Nagahama ◽  
Naruhito Iwasa ◽  
Takao Yamada ◽  
...  
Keyword(s):  
Quantum Well ◽  
Carrier Lifetime ◽  
Laser Diodes ◽  
Optical Gain ◽  
Quantum Well Structure ◽  
Multi Quantum Well ◽  
Structure Laser

Vacancy Promoted Interdiffusion in Quantum Wells and Applications to Optoelectronic Devices

1992 ◽  
Vol 262 ◽  
Author(s):  
M. Ghisoni ◽  
A. W. Rivers ◽  
K. Lee ◽  
G. Parry ◽  
X. Zhang ◽  
...  
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Optoelectronic Devices ◽  
Vacancy Diffusion ◽  
Device Integration ◽  
Free Vacancy

ABSTRACTIn this paper we shall look at a technique, known as impurity free vacancy diffusion (IFVD) for selectively altering the optoelectronic response of quantum well material after growth with a view to monolithic device integration. We will discuss the mechanism, practical considerations and some possible applications.

High-Power, Long-Lifetime InGaN Multi-Quantum-Well-Structure Laser Diodes

1997 ◽  
Vol 36 (Part 2, No. 8B) ◽  
pp. L1059-L1061 ◽  
Author(s):  
Shuji Nakamura ◽  
Masayuki Senoh ◽  
Shin-ichi Nagahama ◽  
Naruhito Iwasa ◽  
Takao Yamada ◽  
...  
Keyword(s):  
Quantum Well ◽  
High Power ◽  
Laser Diodes ◽  
Quantum Well Structure ◽  
Long Lifetime ◽  
Multi Quantum Well ◽  
Structure Laser
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