Disordering of InGaAs/GaAs multiquantum well structure by impurity-free vacancy diffusion for advanced optoelectronic devices and their integration

2005 ◽  
Author(s):  
Jae Su Yu ◽  
Jong Min Kim ◽  
Yong Tak Lee ◽  
Jin Dong Song ◽  
H. Lim
Keyword(s):  
Optoelectronic Devices ◽  
Vacancy Diffusion ◽  
Free Vacancy ◽  
Multiquantum Well

Vacancy Promoted Interdiffusion in Quantum Wells and Applications to Optoelectronic Devices

1992 ◽  
Vol 262 ◽  
Author(s):  
M. Ghisoni ◽  
A. W. Rivers ◽  
K. Lee ◽  
G. Parry ◽  
X. Zhang ◽  
...  
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Optoelectronic Devices ◽  
Vacancy Diffusion ◽  
Device Integration ◽  
Free Vacancy

ABSTRACTIn this paper we shall look at a technique, known as impurity free vacancy diffusion (IFVD) for selectively altering the optoelectronic response of quantum well material after growth with a view to monolithic device integration. We will discuss the mechanism, practical considerations and some possible applications.

Area selectivity of InGaAsP-InP multiquantum-well intermixing by impurity-free vacancy diffusion

1998 ◽  
Vol 4 (4) ◽  
pp. 619-623 ◽  
Author(s):  
Sang Kee Si ◽  
Deok Ho Yeo ◽  
Hyung Hun Yoon ◽  
Sung June Kim
Keyword(s):  
Vacancy Diffusion ◽  
Free Vacancy ◽  
Multiquantum Well

Red-shift in the InGaAsP/GaInP active region using impurity free vacancy diffusion induced quantum well intermixing

2015 ◽  
Vol 644 ◽  
pp. 398-403 ◽  
Author(s):  
Tao Lin ◽  
Haoqing Zhang ◽  
Ruijuan Sun ◽  
Yupeng Duan ◽  
Nan Lin ◽  
...  
Keyword(s):  
Active Region ◽  
Quantum Well ◽  
Red Shift ◽  
Vacancy Diffusion ◽  
Quantum Well Intermixing ◽  
Free Vacancy

Intermixing Characteristics of Strained-InGaAs/InGaAsP Multiple Quantum Well Structure Using Impurity-Free Vacancy Diffusion

1999 ◽  
Vol 38 (Part 2, No. 11B) ◽  
pp. L1303-L1305 ◽  
Author(s):  
Jung Woo Park ◽  
Hyun Soo Kim ◽  
Jung Soo Kim ◽  
Dae Kon Oh ◽  
Kwang Ryong Oh ◽  
...  
Keyword(s):  
Quantum Well ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Vacancy Diffusion ◽  
Quantum Well Structure ◽  
Free Vacancy

Very low loss extended cavity GaAs/AlGaAs lasers made by impurity-free vacancy diffusion

1994 ◽  
Vol 30 (2) ◽  
pp. 145-146 ◽  
Author(s):  
I. Gontijo ◽  
J.S. Roberts ◽  
R.M. De La Rue ◽  
J.H. Marsh ◽  
T. Krauss
Keyword(s):  
Vacancy Diffusion ◽  
Low Loss ◽  
Extended Cavity ◽  
Free Vacancy

Impurity-free Vacancy Diffusion Induces Quantum Well Intermixing in 915 nm Semiconductor Laser Based on SiO2 Film

2018 ◽  
Vol 47 (3) ◽  
pp. 314003
Author(s):  
王鑫 WANG Xin ◽  
赵懿昊 ZHAO Yi-hao ◽  
朱凌妮 ZHU Ling-ni ◽  
侯继达 HOU Ji-da ◽  
马骁宇 MA Xiao-yu ◽  
...  
Keyword(s):  
Quantum Well ◽  
Semiconductor Laser ◽  
Sio2 Film ◽  
Vacancy Diffusion ◽  
Quantum Well Intermixing ◽  
Free Vacancy
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