Metallic Impurities in n- and p- Type Silicon: Dlts Studies

1992 ◽  
Vol 262 ◽  
Author(s):  
Aditya Agarwal ◽  
Z. J. Radzimski ◽  
A. Buczkowski ◽  
F. Shimura ◽  
G. A. Rozgonyi
Keyword(s):  
Deep Level ◽  
Energy Levels ◽  
Simulated Data ◽  
Data Sets ◽  
Time Data ◽  
Type Silicon ◽  
Window Method ◽  
P Type ◽  
Rate Window ◽  
Single Exponential

ABSTRACTDeep level majority and minority carrier traps in p+/n and n+/p junction diodes have been investigated. The junctions were fabricated on n- and p- type silicon which was intentionally and uniformly doped with heavy metals Cr, Fe, Ni, and Au during Czochralski crystal growth. The activation energies of the traps in these devices has been determined using a computer based Deep Level Transient Spectroscopy system which stores and analyzes entire capacitance-time transients. The capacitance-time data sets have been analyzed using the standard rate-window method as well as by a new algorithm which is able to test for the existence of a single exponential. The new algorithm has shown that only one of the ten traps measured contained a single exponential. Rate-window analysis of all the data sets, however, yielded energy levels based on the expectation of a single-exponential, despite the inherent non-exponentiality of the transients. Implications on the reliability of results obtained by the rate window method have been discussed. Possible reasons for the observed non-exponentiality in the data have been suggested based on a study of simulated data.

Charge State of Copper-Silicide Precipitates in Silicon and its Application to the Understanding of Copper Precipitation Kinetics

1998 ◽  
Vol 510 ◽  
Author(s):  
A.A. Istratov ◽  
O.F. Vyvenko ◽  
C. Flink ◽  
T. Heiser ◽  
H. Hieslmair ◽  
...  
Keyword(s):  
Charge State ◽  
Copper Ions ◽  
Deep Level ◽  
Precipitation Kinetics ◽  
Precipitation Behavior ◽  
Copper Silicide ◽  
Copper Precipitation ◽  
Type Silicon ◽  
Rapid Quench ◽  
P Type

AbstractDeep level spectra obtained on n-type silicon samples after copper diffusion and rapid quench give evidence of a positive charge state of the precipitates in p-type silicon. Non-exponential precipitation behavior of interstitial Cu is demonstrated and explained. The possibility of Coulomb interaction between copper ions and copper precipitates is suggested and its influence on Cu precipitation kinetics is disCussed.

Hydrogen-Vacancy Complexes and their Deep States in n-Type Silicon

2015 ◽  
Vol 242 ◽  
pp. 163-168 ◽  
Author(s):  
Ilia L. Kolevatov ◽  
Frank Herklotz ◽  
Viktor Bobal ◽  
Bengt Gunnar Svensson ◽  
Edouard V. Monakhov
Keyword(s):  
Schottky Diode ◽  
Deep Level Transient Spectroscopy ◽  
Minority Carrier ◽  
Deep Level ◽  
Energy Levels ◽  
Depletion Region ◽  
Type Silicon ◽  
Oxygen Center ◽  
Hydrogen Vacancy ◽  
Transient Spectroscopy

The evolution of irradiation-induced and hydrogen-related defects in n-type silicon in the temperature range 0 – 300 °C has been studied by deep level transient spectroscopy (DLTS) and minority carrier transient spectroscopy (MCTS). Implantation of a box-like profile of hydrogen was performed into the depletion region of a Schottky diode to undertake the DLTS and MCTS measurements. Proportionality between the formation of two hydrogen-related deep states and a decrease of the vacancy-oxygen center concentration was found together with the appearance of new hydrogen-related energy levels.

Deep level transient spectroscopy on proton-irradiated Fe-contaminated p-type silicon

2012 ◽  
Vol 9 (10-11) ◽  
pp. 1992-1995 ◽  
Author(s):  
C. K. Tang ◽  
L. Vines ◽  
B. G. Svensson ◽  
E. V. Monakhov
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Type Silicon ◽  
Transient Spectroscopy ◽  
P Type

A deep-level transient spectroscopy study of p-type silicon Schottky barriers containing a Si-O superlattice

2016 ◽  
Vol 254 (4) ◽  
pp. 1600593
Author(s):  
Eddy Simoen ◽  
Suseendran Jayachandran ◽  
Annelies Delabie ◽  
Matty Caymax ◽  
Marc Heyns
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Schottky Barriers ◽  
Spectroscopy Study ◽  
Type Silicon ◽  
Transient Spectroscopy ◽  
P Type

Evolution of deep-level centers in p-type silicon following ion implantation at 85 K

1999 ◽  
Vol 74 (9) ◽  
pp. 1263-1265 ◽  
Author(s):  
C. R. Cho ◽  
N. Yarykin ◽  
R. A. Brown ◽  
O. Kononchuk ◽  
G. A. Rozgonyi ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Deep Level ◽  
Type Silicon ◽  
P Type

Electrical Properties of Copper Silicide/Silicon Interfaces

1993 ◽  
Vol 320 ◽  
Author(s):  
B.G. Svensson
Keyword(s):  
Electrical Properties ◽  
Schottky Barrier ◽  
Deep Level ◽  
Ion Beam ◽  
Energy Levels ◽  
Copper Silicide ◽  
Barrier Heights ◽  
Barrier Formation ◽  
Transient Spectroscopy ◽  
P Type

ABSTRACTThe electrical properties of Cu/Si(100) and Cu3Si/Si(100) interfaces have been studied using both n- and p-type silicon samples. Current-voltage and capacitance-voltage measurements were performed in the temperature range 80-295 K in order to monitor Schottky barrier formation and electrical carrier concentration profiles. Deep-level transient spectroscopy was employed to observe Cu-related energy levels in the forbidden band gap of Si, and different ion beam analysis techniques were applied to study the interfacial reaction between Cu and Si. Emphasis is put on determination of Schottky barrier heights and their variation with temperature, dopant passivation by Cu atoms and interaction of Cu with irradiation-induced point defects in silicon.

Multi-Exponential Analysis of DLTS by Contin

1986 ◽  
Vol 69 ◽  
Author(s):  
Jun Morimoto ◽  
Tatsuo Kida ◽  
Toru Miyakawa
Keyword(s):  
Continuous Spectrum ◽  
Cross Sections ◽  
Emission Rate ◽  
Deep Level ◽  
Energy Levels ◽  
Three Dimensional ◽  
Deep Impurity ◽  
Junction Capacitance ◽  
Single Temperature ◽  
Single Exponential

AbstractDeep level transient spectroscopy (DLTS), which assumes a single exponential decay form for the transient junction capacitance, is the most commonly used method to characterize deep impurity levels in semiconductors. However conventional DLTS may lead to erroneous results if there are several closely spaced energy levels or the emission rate has a continuous spectrum. To overcome this difficulty a novel method named the multi-exponential analysis of DLTS by CONTIN (MEDLTS by CONTIN) is proposed. This method analyzes the emission rate to have a finite continuous spectrum S(λ) which appears in the transient junction capacitance C(t)=, by using the program “CONTIN” developed by Provencher in biophysics. Even if S(λ) includes two peaks at λ1 and λ2, those peaks can be distinguished for λ2/ λ1>2. As an example of the application of this method, deep levels in Si:Au were experimentally investigated. According to the three dimensional S(λ)-T2/λ-1/T representation, the single peak in the conventional DLTS was clarified to consist of two adjacent levels with activation energies and capture cross sections EB1=0.51eV, σB1=4.0×10−15cm2 and EB2=0.47eV, σB2=1.1×10−15cm2. With the assumption of the finite continuous spectrum S(λ) for the emission rate, MEDLTS by CONTIN permits one to get much information correctly. MEDLTS by CONTIN is superior to the conventional DLTS because it is a single-temperature scan, multi-exponential analysis instead of the conventional multi-temperature scan, single-exponential analysis.

Dlts Ciiaracterizati oh of Precipitation Induced Microdefects

1986 ◽  
Vol 71 ◽  
Author(s):  
F.D. Whitwer ◽  
H. Haddad ◽  
L. Forbes
Keyword(s):  
Heavy Metal ◽  
Deep Level ◽  
Silicon Wafers ◽  
Lower Half ◽  
Type Silicon ◽  
P Type

AbstractCapacitance DLTS measurements have been performed on heavily precipitated n— and p—type silicon wafers. The results indicate heavy metal gettering with a mid-bandgap deep level (0.55eV) for n—type silicon. The results for p—type siliconshow a band of states present in the lower half of the bandgap. This band of states correlates well to the band of allowed energies found in heavily dislocated p—type silicon.

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