Charge State of Copper-Silicide Precipitates in Silicon and its Application to the Understanding of Copper Precipitation Kinetics

1998 ◽  
Vol 510 ◽  
Author(s):  
A.A. Istratov ◽  
O.F. Vyvenko ◽  
C. Flink ◽  
T. Heiser ◽  
H. Hieslmair ◽  
...  
Keyword(s):  
Charge State ◽  
Copper Ions ◽  
Deep Level ◽  
Precipitation Kinetics ◽  
Precipitation Behavior ◽  
Copper Silicide ◽  
Copper Precipitation ◽  
Type Silicon ◽  
Rapid Quench ◽  
P Type

AbstractDeep level spectra obtained on n-type silicon samples after copper diffusion and rapid quench give evidence of a positive charge state of the precipitates in p-type silicon. Non-exponential precipitation behavior of interstitial Cu is demonstrated and explained. The possibility of Coulomb interaction between copper ions and copper precipitates is suggested and its influence on Cu precipitation kinetics is disCussed.

Deep level transient spectroscopy on proton-irradiated Fe-contaminated p-type silicon

2012 ◽  
Vol 9 (10-11) ◽  
pp. 1992-1995 ◽  
Author(s):  
C. K. Tang ◽  
L. Vines ◽  
B. G. Svensson ◽  
E. V. Monakhov
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Type Silicon ◽  
Transient Spectroscopy ◽  
P Type

A deep-level transient spectroscopy study of p-type silicon Schottky barriers containing a Si-O superlattice

2016 ◽  
Vol 254 (4) ◽  
pp. 1600593
Author(s):  
Eddy Simoen ◽  
Suseendran Jayachandran ◽  
Annelies Delabie ◽  
Matty Caymax ◽  
Marc Heyns
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Schottky Barriers ◽  
Spectroscopy Study ◽  
Type Silicon ◽  
Transient Spectroscopy ◽  
P Type

Evolution of deep-level centers in p-type silicon following ion implantation at 85 K

1999 ◽  
Vol 74 (9) ◽  
pp. 1263-1265 ◽  
Author(s):  
C. R. Cho ◽  
N. Yarykin ◽  
R. A. Brown ◽  
O. Kononchuk ◽  
G. A. Rozgonyi ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Deep Level ◽  
Type Silicon ◽  
P Type

Electrical Properties of Copper Silicide/Silicon Interfaces

1993 ◽  
Vol 320 ◽  
Author(s):  
B.G. Svensson
Keyword(s):  
Electrical Properties ◽  
Schottky Barrier ◽  
Deep Level ◽  
Ion Beam ◽  
Energy Levels ◽  
Copper Silicide ◽  
Barrier Heights ◽  
Barrier Formation ◽  
Transient Spectroscopy ◽  
P Type

ABSTRACTThe electrical properties of Cu/Si(100) and Cu3Si/Si(100) interfaces have been studied using both n- and p-type silicon samples. Current-voltage and capacitance-voltage measurements were performed in the temperature range 80-295 K in order to monitor Schottky barrier formation and electrical carrier concentration profiles. Deep-level transient spectroscopy was employed to observe Cu-related energy levels in the forbidden band gap of Si, and different ion beam analysis techniques were applied to study the interfacial reaction between Cu and Si. Emphasis is put on determination of Schottky barrier heights and their variation with temperature, dopant passivation by Cu atoms and interaction of Cu with irradiation-induced point defects in silicon.

Dlts Ciiaracterizati oh of Precipitation Induced Microdefects

1986 ◽  
Vol 71 ◽  
Author(s):  
F.D. Whitwer ◽  
H. Haddad ◽  
L. Forbes
Keyword(s):  
Heavy Metal ◽  
Deep Level ◽  
Silicon Wafers ◽  
Lower Half ◽  
Type Silicon ◽  
P Type

AbstractCapacitance DLTS measurements have been performed on heavily precipitated n— and p—type silicon wafers. The results indicate heavy metal gettering with a mid-bandgap deep level (0.55eV) for n—type silicon. The results for p—type siliconshow a band of states present in the lower half of the bandgap. This band of states correlates well to the band of allowed energies found in heavily dislocated p—type silicon.

Introduction of Electrical Defects in P-Type Silicon due to Electron-Beam and RF Sputtering Metallization Processes

1983 ◽  
Vol 25 ◽  
Author(s):  
O. Paz ◽  
F. D. Auret
Keyword(s):  
Electron Beam ◽  
Deep Level ◽  
Rf Sputtering ◽  
Electron Beam Evaporation ◽  
Defect States ◽  
Type Silicon ◽  
Carrier Recombination ◽  
Electron Beam Induced Current ◽  
Transient Spectroscopy ◽  
P Type

ABSTRACTDefects introduced in p-type silicon during RF sputter deposition of Ti-W and electron-beam evaporation of hafnium were investigated using I-V, deep level transient spectroscopy and electron-beam induced current techniques. DLTS measurements indicate the presence of several deposition and evaporation induced defect states. H(0.35) at EV + .35 eV and H(0.38) were the most prominent defects. Minority carrier diffusion length results taken after annealing showed that in the case of the Hf contacts the damage was annealed out while in the case of Ti-W it was not. These differences in carrier recombination are traced to the concentration of H(0.35). Sputtering or evaporation induced damage also increased the barrier height. This observed increase was modeled assuming the introduction of donor-like defects.

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