Dlts Ciiaracterizati oh of Precipitation Induced Microdefects

1986 ◽  
Vol 71 ◽  
Author(s):  
F.D. Whitwer ◽  
H. Haddad ◽  
L. Forbes
Keyword(s):  
Heavy Metal ◽  
Deep Level ◽  
Silicon Wafers ◽  
Lower Half ◽  
Type Silicon ◽  
P Type

AbstractCapacitance DLTS measurements have been performed on heavily precipitated n— and p—type silicon wafers. The results indicate heavy metal gettering with a mid-bandgap deep level (0.55eV) for n—type silicon. The results for p—type siliconshow a band of states present in the lower half of the bandgap. This band of states correlates well to the band of allowed energies found in heavily dislocated p—type silicon.

Charge State of Copper-Silicide Precipitates in Silicon and its Application to the Understanding of Copper Precipitation Kinetics

1998 ◽  
Vol 510 ◽  
Author(s):  
A.A. Istratov ◽  
O.F. Vyvenko ◽  
C. Flink ◽  
T. Heiser ◽  
H. Hieslmair ◽  
...  
Keyword(s):  
Charge State ◽  
Copper Ions ◽  
Deep Level ◽  
Precipitation Kinetics ◽  
Precipitation Behavior ◽  
Copper Silicide ◽  
Copper Precipitation ◽  
Type Silicon ◽  
Rapid Quench ◽  
P Type

AbstractDeep level spectra obtained on n-type silicon samples after copper diffusion and rapid quench give evidence of a positive charge state of the precipitates in p-type silicon. Non-exponential precipitation behavior of interstitial Cu is demonstrated and explained. The possibility of Coulomb interaction between copper ions and copper precipitates is suggested and its influence on Cu precipitation kinetics is disCussed.

Deep level transient spectroscopy on proton-irradiated Fe-contaminated p-type silicon

2012 ◽  
Vol 9 (10-11) ◽  
pp. 1992-1995 ◽  
Author(s):  
C. K. Tang ◽  
L. Vines ◽  
B. G. Svensson ◽  
E. V. Monakhov
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Type Silicon ◽  
Transient Spectroscopy ◽  
P Type

AC Photovoltaic Images of Thermally Oxidized P-Type Silicon Wafers Contaminated with Metals

1992 ◽  
Vol 31 (Part 1, No. 8) ◽  
pp. 2319-2321 ◽  
Author(s):  
Hirofumi Shimizu ◽  
Chusuke Munakata
Keyword(s):  
Silicon Wafers ◽  
Type Silicon ◽  
P Type

Electronic States of Oxygen-Free Dislocation Networks Produced by Direct Bonding of Silicon Wafers

2009 ◽  
Vol 156-158 ◽  
pp. 283-288 ◽  
Author(s):  
Maxim Trushin ◽  
O.F. Vyvenko ◽  
Teimuraz Mchedlidze ◽  
Oleg Kononchuk ◽  
Martin Kittler
Keyword(s):  
Oxygen Concentration ◽  
Dislocation Structure ◽  
Electronic States ◽  
Silicon Wafers ◽  
Experimental Investigations ◽  
Deformation Potential ◽  
Screw Dislocations ◽  
Type Silicon ◽  
Frenkel Effect ◽  
P Type

The results of experimental investigations of the dislocation-related DLTS-peaks originated from the dislocation networks (DN) are presented. Samples with DNs were produced by direct bonding of p-type silicon wafers and no enhancement of oxygen concentration was detected near the DN plane. Origins of the DLTS peaks were proposed and a correlation with the dislocation-related photoluminescence data was established based on known dislocation structure of the samples. Two types of shallow DLTS peaks exhibited Pool-Frenkel effect, which could be linked to the dislocation deformation potential. One of the shallow DLTS peaks was related to straight parts of screw dislocations and another - to the intersections of the dislocations.

A deep-level transient spectroscopy study of p-type silicon Schottky barriers containing a Si-O superlattice

2016 ◽  
Vol 254 (4) ◽  
pp. 1600593
Author(s):  
Eddy Simoen ◽  
Suseendran Jayachandran ◽  
Annelies Delabie ◽  
Matty Caymax ◽  
Marc Heyns
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Schottky Barriers ◽  
Spectroscopy Study ◽  
Type Silicon ◽  
Transient Spectroscopy ◽  
P Type
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