An Investigation of Vacancy Concentrations in Bulk Silicon

1992 ◽  
Vol 262 ◽  
Author(s):  
Horst Zimmermann ◽  
H. Ryssel
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Vacancy Concentration ◽  
Gold Concentration ◽  
Bulk Silicon ◽  
Oxygen Precipitation ◽  
Float Zone ◽  
Transient Spectroscopy ◽  
Vacancy Concentrations

ABSTRACTA method will be presented, which allows the quantitative determination of distributions of single vacancies in bulk silicon. The method uses deep level transient spectroscopy (DLTS) measurements of the platinum or gold concentration after diffusion at a low temperature. An analytical expression allows the calculation of the vacancy concentration from the measured platinum or gold concentration. Vacancy concentrations vary at least from 2.0×1012 to 2.2×1014 cm3 in float zone silicon. The vacancy concentrations in Czrochalski (CZ) silicon are in the range of 4×1012 to 2×1013 cm3. Microwave photoconductive decay instead of DLTS allows much faster measurements of vacancy distributions on whole wafers. Furthermore, both methods allow the investigation of oxygen precipitation in CZ silicon.

Bistable Defects Induced in GaAs by H2 Plasma Process

1989 ◽  
Vol 146 ◽  
Author(s):  
X. Boddaert ◽  
D. Vuillaume ◽  
D. Stievenard ◽  
J.C. Bourgoin ◽  
P. Boher
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Plasma Process ◽  
Stable States ◽  
Native Defects ◽  
Complete Determination ◽  
Lec Gaas ◽  
Transient Spectroscopy ◽  
Configuration Coordinate

ABSTRACTWe have studied the effect of an H2 plasma (150 W; 150°C; 10, 20, 50, 100 s) on unannealed and annealed (850°C, AsH3 atmosphere) LEC GaAs material. Using Deep Level Transient Spectroscopy, we have shown that the plasma induces a main bistable defect DO, which has two possible stable states Dl and D2. A complete determination of the corresponding Configuration Coordinate Diagram has been done. Finally, no correlation has been obtained between DO and the native defects EL6, EL3 and EL2. No passivation of the EL2 defect has been observed and the evolution of the D0 concentration results from the association of hydrogen with AsGa. These observations are in disagreement with the identification of EL2 with an isolated AsGa.

Determination of the X conduction‐subband energies in type II GaAs/AlAs/GaAs quantum well by deep level transient spectroscopy

1995 ◽  
Vol 67 (24) ◽  
pp. 3593-3595 ◽  
Author(s):  
Qin‐Sheng Zhu ◽  
Zong‐Quan Gu ◽  
Zhan‐Tian Zhong ◽  
Zeng‐Qi Zhou ◽  
Li‐Wu Lu
Keyword(s):  
Quantum Well ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Type Ii ◽  
Transient Spectroscopy
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