Determination of the X conduction‐subband energies in type II GaAs/AlAs/GaAs quantum well by deep level transient spectroscopy

1995 ◽  
Vol 67 (24) ◽  
pp. 3593-3595 ◽  
Author(s):  
Qin‐Sheng Zhu ◽  
Zong‐Quan Gu ◽  
Zhan‐Tian Zhong ◽  
Zeng‐Qi Zhou ◽  
Li‐Wu Lu
Keyword(s):  
Quantum Well ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Type Ii ◽  
Transient Spectroscopy

Deep level transient spectroscopy of AlxGa1 xAs/GaAs single-quantum-well lasers

2004 ◽  
Vol 19 (7) ◽  
pp. 897-901 ◽  
Author(s):  
K Zdansky ◽  
V Gorodynskyy ◽  
J Kosíková ◽  
A Rudra ◽  
E Kapon ◽  
...  
Keyword(s):  
Quantum Well ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Quantum Well Lasers ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Transient Spectroscopy

Bistable Defects Induced in GaAs by H2 Plasma Process

1989 ◽  
Vol 146 ◽  
Author(s):  
X. Boddaert ◽  
D. Vuillaume ◽  
D. Stievenard ◽  
J.C. Bourgoin ◽  
P. Boher
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Plasma Process ◽  
Stable States ◽  
Native Defects ◽  
Complete Determination ◽  
Lec Gaas ◽  
Transient Spectroscopy ◽  
Configuration Coordinate

ABSTRACTWe have studied the effect of an H2 plasma (150 W; 150°C; 10, 20, 50, 100 s) on unannealed and annealed (850°C, AsH3 atmosphere) LEC GaAs material. Using Deep Level Transient Spectroscopy, we have shown that the plasma induces a main bistable defect DO, which has two possible stable states Dl and D2. A complete determination of the corresponding Configuration Coordinate Diagram has been done. Finally, no correlation has been obtained between DO and the native defects EL6, EL3 and EL2. No passivation of the EL2 defect has been observed and the evolution of the D0 concentration results from the association of hydrogen with AsGa. These observations are in disagreement with the identification of EL2 with an isolated AsGa.

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