Deep level transient spectroscopy investigation of a deep trap in float‐zone Si

1994 ◽  
Vol 75 (1) ◽  
pp. 645-647 ◽  
Author(s):  
C. A. Londos
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Deep Trap ◽  
Float Zone ◽  
Transient Spectroscopy

Deep Trap Measurement inHg1-xCdxTeby Isothermal Capacitance and Deep-Level Transient Spectroscopy

1996 ◽  
Vol 35 (Part 1, No. 6A) ◽  
pp. 3374-3375
Author(s):  
Koji Sato ◽  
Katsuhiko Suno ◽  
Hideo Wada ◽  
Yoichi Okamoto ◽  
Jun Morimoto ◽  
...  
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Deep Trap ◽  
Transient Spectroscopy

Correlation Between Ti-Silicided Shallow Junction Diode Leakage and Titaniun Diffusion during TISI2 Fornation

1986 ◽  
Vol 71 ◽  
Author(s):  
K. Nauka ◽  
Jun Amano ◽  
M.P. Scott ◽  
E.R. Weber ◽  
J.E. Turner ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Leakage Current ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Analytical Techniques ◽  
Deep Trap ◽  
Junction Region ◽  
Leakage Currents ◽  
Junction Diode ◽  
Transient Spectroscopy

AbstractDeep level transient spectroscopy (DLTS) in conjunction with other analytical techniques was used to establish a correlation between the leakage current in the TiSi2/p+/n-Si shallow diodes (0.25 micron) and the Ti-related Ec - 0.23 eV deep trap. It was found that Ti diffused into the junction region durin the TiSi2 formation and caused leakage currents with values up to 2 × 10−8 A/cm2. Further increases of the leakage current were related to the formation of a TiSi2/n-Si Schottky barrier.

An Investigation of Vacancy Concentrations in Bulk Silicon

1992 ◽  
Vol 262 ◽  
Author(s):  
Horst Zimmermann ◽  
H. Ryssel
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Vacancy Concentration ◽  
Gold Concentration ◽  
Bulk Silicon ◽  
Oxygen Precipitation ◽  
Float Zone ◽  
Transient Spectroscopy ◽  
Vacancy Concentrations

ABSTRACTA method will be presented, which allows the quantitative determination of distributions of single vacancies in bulk silicon. The method uses deep level transient spectroscopy (DLTS) measurements of the platinum or gold concentration after diffusion at a low temperature. An analytical expression allows the calculation of the vacancy concentration from the measured platinum or gold concentration. Vacancy concentrations vary at least from 2.0×1012 to 2.2×1014 cm3 in float zone silicon. The vacancy concentrations in Czrochalski (CZ) silicon are in the range of 4×1012 to 2×1013 cm3. Microwave photoconductive decay instead of DLTS allows much faster measurements of vacancy distributions on whole wafers. Furthermore, both methods allow the investigation of oxygen precipitation in CZ silicon.

The effects of the nonabrupt depletion edge on deep‐trap profiles determined by deep‐level transient spectroscopy

1987 ◽  
Vol 61 (12) ◽  
pp. 5303-5307 ◽  
Author(s):  
Jian H. Zhao ◽  
Jyh‐Chwen Lee ◽  
Z. Q. Fang ◽  
T. E. Schlesinger ◽  
A. G. Milnes
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Deep Trap ◽  
Transient Spectroscopy

Persistent Photoconductivity And Thermal Recovery Kinetics Of Low Energy Ar + Bombarded GaAs

1991 ◽  
Vol 223 ◽  
Author(s):  
A. Vaseashta ◽  
L. C. Burton
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Thermal Recovery ◽  
Low Energy ◽  
Persistent Photoconductivity ◽  
Transport Parameters ◽  
Excellent Correlation ◽  
Proposed Model ◽  
Transient Spectroscopy ◽  
Kinetics Of

ABSTRACTKinetics of persistent photoconductivity, photoquenching, and thermal and optical recovery observed in low energy Ar+ bombarded on (100) GaAs surfaces have been investigated. Rate and transport equations for these processes were derived and simulated employing transport parameters, trap locations and densities determined by deep level transient spectroscopy. Excellent correlation was obtained between the results of preliminary simulation and the experimentally observed values. The exponential decay of persistent photoconductivity response curve was determined to be due to metastable electron traps with longer lifetime and is consistent with an earlier proposed model.

Deep level study in epitaxial 4H-SiC grown on substrates inclined toward

2002 ◽  
Vol 719 ◽  
Author(s):  
Masashi Kato ◽  
Masaya Ichimura ◽  
Eisuke Arai ◽  
Shigehiro Nishino
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Activation Energies ◽  
Thickness Dependence ◽  
Epitaxial Layers ◽  
Transient Spectroscopy

AbstractEpitaxial layers of 4H-SiC are grown on (0001) substrates inclined toward <1120> and <1100> directions. Defects in these films are characterized by deep level transient spectroscopy (DLTS) in order to clarify the dependence of concentrations and activation energies on substrate inclination. DLTS results show no such dependence on substrate inclination but show thickness dependence of the concentration.

Two-Dimensional Local Deep-Level Transient Spectroscopy Imaging Using Super-Higher-Order Scanning Nonlinear Dielectric Microscopy

2016 ◽  
Author(s):  
N. Chinone ◽  
Y. Cho ◽  
R. Kosugi ◽  
Y. Tanaka ◽  
S. Harada ◽  
...  
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Higher Order ◽  
Trap Density ◽  
New Technique ◽  
Two Dimensional ◽  
Nonlinear Dielectric ◽  
Annealing Conditions ◽  
Transient Spectroscopy ◽  
A New Technique

Abstract A new technique for local deep level transient spectroscopy (DLTS) imaging using super-higher-order scanning nonlinear dielectric microscopy is proposed. Using this technique. SiCVSiC structure samples with different post oxidation annealing conditions were measured. We observed that the local DLTS signal decreases with post oxidation annealing (POA), which agrees with the well-known phenomena that POA reduces trap density. Furthermore, obtained local DLTS images had dark and bright areas, which is considered to show the trap distribution at/near SiCVSiC interface.

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