Determination of the sub‐band energy in the V‐shaped potential well of δ ‐doped GaAs by deep level transient spectroscopy

1994 ◽  
Vol 65 (19) ◽  
pp. 2425-2427 ◽  
Author(s):  
Q. S. Zhu ◽  
Z. T. Zhong ◽  
L. W. Lu ◽  
C. F. Li
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Potential Well ◽  
Band Energy ◽  
Transient Spectroscopy

Bistable Defects Induced in GaAs by H2 Plasma Process

1989 ◽  
Vol 146 ◽  
Author(s):  
X. Boddaert ◽  
D. Vuillaume ◽  
D. Stievenard ◽  
J.C. Bourgoin ◽  
P. Boher
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Plasma Process ◽  
Stable States ◽  
Native Defects ◽  
Complete Determination ◽  
Lec Gaas ◽  
Transient Spectroscopy ◽  
Configuration Coordinate

ABSTRACTWe have studied the effect of an H2 plasma (150 W; 150°C; 10, 20, 50, 100 s) on unannealed and annealed (850°C, AsH3 atmosphere) LEC GaAs material. Using Deep Level Transient Spectroscopy, we have shown that the plasma induces a main bistable defect DO, which has two possible stable states Dl and D2. A complete determination of the corresponding Configuration Coordinate Diagram has been done. Finally, no correlation has been obtained between DO and the native defects EL6, EL3 and EL2. No passivation of the EL2 defect has been observed and the evolution of the D0 concentration results from the association of hydrogen with AsGa. These observations are in disagreement with the identification of EL2 with an isolated AsGa.

Effect of NO Annealing on 6H- and 4H-SiC MOS Interface States

2010 ◽  
Vol 645-648 ◽  
pp. 499-502 ◽  
Author(s):  
Alberto F. Basile ◽  
John Rozen ◽  
X.D. Chen ◽  
Sarit Dhar ◽  
John R. Williams ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Cross Section ◽  
Deep Level Transient Spectroscopy ◽  
Capture Cross Section ◽  
Deep Level ◽  
Capture Cross ◽  
Temperature Dependent ◽  
Band Energy ◽  
Transient Spectroscopy ◽  
Semiconductor Traps

The electrical properties of the SiC/SiO2 interface resulting from oxidation of the n-type 6H-SiC polytype were studied by hi-lo CV, temperature dependent CV and constant capacitance deep level transient spectroscopy (CCDLTS) techniques. Several trap species differing in energy and capture cross section were identified. A trap distribution at 0.5 eV below the 6H-SiC conduction band energy and a shallower density of states in both the 6H and 4H polytyes are passivated by post-oxidation NO annealing. However, other ultra-shallow and deeper defect distributions remain after nitridation. The latter may originate from semiconductor traps.

Determination of the X conduction‐subband energies in type II GaAs/AlAs/GaAs quantum well by deep level transient spectroscopy

1995 ◽  
Vol 67 (24) ◽  
pp. 3593-3595 ◽  
Author(s):  
Qin‐Sheng Zhu ◽  
Zong‐Quan Gu ◽  
Zhan‐Tian Zhong ◽  
Zeng‐Qi Zhou ◽  
Li‐Wu Lu
Keyword(s):  
Quantum Well ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Type Ii ◽  
Transient Spectroscopy
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