Current-voltage characteristics and X- ray diffraction study of Pd/Si1- xGex schottky contacts

1996 ◽  
Vol 25 (3) ◽  
pp. 501-505 ◽  
Author(s):  
L. He ◽  
Z. Q. Shi ◽  
Y. D. Zheng
Keyword(s):  
Diffraction Study ◽  
Schottky Contacts ◽  
X Ray Diffraction ◽  
X Ray ◽  
Current Voltage ◽  
Current Voltage Characteristics

Rectifying characteristics and tunable magnetoresistance in heterojunctions of La0.9Hf0.1MnO3/0.05 wt.% Nb-doped SrTiO3

2017 ◽  
Vol 31 (25) ◽  
pp. 1745022 ◽  
Author(s):  
Yaping Qi ◽  
Xiangbo Liu ◽  
Hao Ni ◽  
Ming Zheng ◽  
Liping Chen ◽  
...  
Keyword(s):  
Band Structure ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Ferromagnetic Transition ◽  
Grown Film ◽  
X Ray Diffraction ◽  
Temperature Dependent ◽  
X Ray ◽  
Current Voltage ◽  
Current Voltage Characteristics

La[Formula: see text]Hf[Formula: see text]MnO3 films were grown on 0.05 wt.% Nb-doped SrTiO3 substrates by pulsed laser deposition. X-ray diffraction measurements demonstrated that our samples were of good epitaxy and single-crystal. The temperature-dependent resistance has been investigated. It was observed that the as-grown film of La[Formula: see text]Hf[Formula: see text]MnO3 exhibited a typical paramagnetic-ferromagnetic transition. Heterojunctions of La[Formula: see text]Hf[Formula: see text]MnO3/0.05 wt.% Nb-doped SrTiO3 exhibited-asymmetric current–voltage characteristics and a remarkable temperature-dependent rectifying behavior in a wide temperature range (from 40 K to 300 K). And the most remarkable observation of this work is the existence of a crossover from positive to negative magnetoresistance in the La[Formula: see text]Hf[Formula: see text]MnO3/0.05 wt.% Nb-doped SrTiO3 heterojunction as the temperature decreases. A temperature-dependent magnetoresistance was studied as well. The rectifying characteristics and tunable magnetoresistance of these heterojunctions may be attributed to band structure of La[Formula: see text]Hf[Formula: see text]MnO3/0.05 wt.% Nb-doped SrTiO3 heterojunction.

Metallurgical and Electrical Characteristics of MoAlx Schottky Contacts to n-GaAs

1992 ◽  
Vol 260 ◽  
Author(s):  
T. S. Huang ◽  
J. G. Peng ◽  
C. C. Lin
Keyword(s):  
Thermal Processing ◽  
Annealing Temperature ◽  
Schottky Diodes ◽  
Schottky Contacts ◽  
Electrical Characteristics ◽  
Interfacial Stability ◽  
X Ray Diffraction ◽  
X Ray ◽  
Barrier Heights ◽  
Current Voltage

ABSTRACTThe interfacial stability, surface morphology and electrical characteristics of MoAlx contacts to n-GaAs have been investigated by using x-ray diffraction, scanning electron microscopy, sheet resistance and current-voltage measurements. The compositions of rf-cosputtered MoAlx films were x = 0.35, 2.7, and 7.0, respectively. The contacts were annealed by rapid thermal processing in the temperature range 500–1000 °C for 20 s. The interfaces of MoAl0.35/GaAs and MoAl2,7/GaAs were stable up to 900 °C, while the interfaces of MoAl7.0/GaAs were less stable and reactions occurred above 800 °C. The variations of sheet resistances and the barrier heights of the Schottky diodes as a function of annealing temperatures can be well correlated to the interfacial stability. The MoAl2.7/n-GaAs diodes exhibited the best stability and were characterized by the highest barrier height (0.98 V) and nearly unit ideality factor (1.11) after annealing at 900 °C. For all thermally stable MoAlx/n-GaAs Schottky diodes, the barrier heights increased with annealing temperature.

Transverse Electrical Transport in Pentacene Photodiodes

2005 ◽  
Vol 871 ◽  
Author(s):  
Cristobal Voz ◽  
Joaquim Puigdollers ◽  
Marta Fonrodona ◽  
Isidro Martin ◽  
Albert Orpell ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Transport ◽  
Thermal Evaporation ◽  
X Ray Diffraction ◽  
X Ray ◽  
Glass Substrates ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Localised States ◽  
Excitonic States

AbstractThe microstructure of pentacene thin films deposited by thermal evaporation is studied by X-ray diffraction. The transmittance of these films evidences different molecular orbital levels and their related excitonic states. Pentacene photodiodes have been also fabricated on ITO-coated glass substrates with aluminium top electrodes. The current voltage characteristics of such devices are discussed paying special attention to the strongly marked space-charge limited regime. This has been related to trapping in an exponential distribution of localised states in the gap of pentacene. The analysis of the characteristic offers valuable information about such distribution of traps. Finally, the external-quantum-efficiency of these photodiodes shows antibatic features, which evidence the importance of excitonic states in the photovoltaic conversion in pentacene.

Characteristics of Pdai Schottky Contacts to n-GaAs

1993 ◽  
Vol 319 ◽  
Author(s):  
T.S. Huang ◽  
J.G. Pang
Keyword(s):  
Depth Profiling ◽  
Schottky Contacts ◽  
Voltage Measurement ◽  
X Ray Diffraction ◽  
X Ray ◽  
Barrier Heights ◽  
Β Phase ◽  
Transmission Electron ◽  
Current Voltage ◽  
Thermal Stability Of

AbstractMetallurgical and electrical properties of β-phase PdAl Schottky metallizations on n-GaAs after rapid thermal annealing for 20 s in the temperature range 500-1000°C have been investigated using x-ray diffraction, transmission electron microscopy, Auger depth profiling and current-voltage measurement. The Al-rich contacts were stable up to 900°C, whereas the Pdrich contacts were less stable. The thermal stability of Pd-rich contacts decreased with increasing Pd composition, and interfacial reaction after high temperature annealing resulted in the formation of PdGa compound. The interface between Al-rich PdAI and GaAs substrate was quite sharp even after 900°C anneal. The Schottky barrier heights of Al-rich PdAl contacts increased with annealing temperature. The barrier height enhancement in the annealed Al-rich contacts can be attributed to the thin AlxGal−xAs layer formed at the interface between PdAl and GaAs.

scholarly journals GaN Layers Grown by HVPE on P-type 6H-SiC Substrates

1996 ◽  
Vol 1 ◽  
Author(s):  
A.E. Nikolaev ◽  
Yu.V. Melnik ◽  
M.N. Blashenkov ◽  
N.I. Kuznetsov ◽  
I.P. Nikitina ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
Crystal Quality ◽  
Band Edge ◽  
Band Edge Emission ◽  
X Ray Diffraction ◽  
Edge Emission ◽  
X Ray ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
P Type

Gallium nitride films were successfully grown by HVPE technique on p-type 6H-SiC substrate. The layers exhibit high crystal quality as was determined by X-ray diffraction. Photoluminescence (PL) of these films was measured. The PL spectra were dominated by band edge emission. Concentration Nd-Na in undoped epitaxial layers ranged from 2×1017 to 1×1019cm−3. Mesa-structures formed by reactive ion etching showed good rectifying current-voltage characteristics for GaN/SiC pn heterojunctions.

STRUCTURAL AND ELECTRICAL PROPERTIES OF RF MAGNETRON SPUTTERED TANTALUM OXIDE FILMS

2011 ◽  
Vol 10 (04n05) ◽  
pp. 749-753
Author(s):  
S. V. JAGADEESH CHANDRA ◽  
D. S. PARK ◽  
S. UTHANNA ◽  
CHEL-JONG CHOI ◽  
A. GURUVA REDDY
Keyword(s):  
Tantalum Oxide ◽  
Oxide Films ◽  
Rf Magnetron Sputtering ◽  
Silicon Substrates ◽  
X Ray Diffraction ◽  
X Ray ◽  
Current Voltage ◽  
Structural And Electrical Properties ◽  
Current Voltage Characteristics ◽  
P Type

RF magnetron sputtering technique was employed for deposition of tantalum oxide films on p-type silicon substrates by sputtering of pure tantalum oxide target in the presence of oxygen and argon gases at a temperature of 303 K. X-ray photoelectron spectroscopic and X-ray diffraction studies indicated that the films annealed at 773 K were stoichiometric and polycrystalline respectively. The accumulation capacitance for the devices in a structure of Al/Ta2O5/p-Si has been decreased noticeably lower values for the devices annealed at high temperatures. Improved current–voltage characteristics were observed for all annealed devices with Poole–Frenkel conduction mechanism.

Proton Beam Texturing of Superconducting YBaCuO Ceramics

2000 ◽  
Vol 659 ◽  
Author(s):  
Makhmud Kalanov ◽  
Elvira M. Ibragimova
Keyword(s):  
Proton Beam ◽  
Dose Interval ◽  
X Ray Diffraction ◽  
Current Increase ◽  
X Ray ◽  
Oxygen Sublattices ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Induced Defects ◽  
Texture Degree

ABSTRACTResistive superconducting (SC) transition, current-voltage characteristics, and X-ray diffraction (XRD) of YBaCuO ceramics have been studied after exposure to 18 MeV proton beam at 300 K. In the interval of 1013 −5×1014 cm−2 the irradiation induced oxygenation of weak intergrain contacts and grain alignment, anisotropy and broadening of SC-transition measured along and across the proton beam, and residual magnetization were found. The proton induced anisotropic texture is responsible for the critical current increase at 77 K and the resistivity decrease at 90–200 K. In a higher dose interval of 1013 −1015 cm−2 the SC-transition parameters degrade and the resistivity increases, depending on a texture degree, weak intergrain links become deoxygenated and no texture occurs. The magnetization (pinning) and the anisotropy of SC-transition can be due to localization of charges at the proton induced defects (mostly in oxygen sublattices).

Volume and X-ray diffraction study of terephthal-bis-4,n-decylaniline (TBDA)

1986 ◽  
Vol 47 (1) ◽  
pp. 133-138 ◽  
Author(s):  
D. Guillon ◽  
A. Skoulios ◽  
J.J. Benattar
Keyword(s):  
Diffraction Study ◽  
X Ray Diffraction ◽  
X Ray

X-ray diffraction study on uniformly oriented quasicrystals

1987 ◽  
Vol 48 (8) ◽  
pp. 1357-1361 ◽  
Author(s):  
F. Dénoyer ◽  
G. Heger ◽  
M. Lambert ◽  
J.M. Lang ◽  
P. Sainfort
Keyword(s):  
Diffraction Study ◽  
X Ray Diffraction ◽  
X Ray
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